Semiconductor device and manufacturing method of semiconductor device
View Patent ↗A semiconductor device having a large storage capacity per unit area is provided. The semiconductor device including a memory string, where the memory string includes a memory cell and a transistor; the memory cell includes a first conductor having a first opening, a first insulator provided inside the first opening, a second insulator provided inside the first insulator, a third insulator provided inside the second insulator, and a first oxide provided inside the third insulator; the transistor includes a second conductor having a second opening, the first insulator provided inside the second opening, the first oxide provided inside the first insulator, a fifth insulator provided inside the first oxide, and a third conductor provided inside the fifth insulator; the second conductor includes a region overlapping with the first oxide with the first insulator therebetween; and the third conductor includes a region overlapping with the first oxide with the fifth insulator therebetween.
1. A semiconductor device comprising a memory string,
wherein the memory string comprises a memory cell and a transistor,
wherein the memory cell comprises:
a first conductor having a first opening;
a first insulator inside the first opening;
a second insulator provided inside the first insulator;
a third insulator provided inside the second insulator;
a first oxide provided inside the third insulator; and
a fourth insulator provided inside the first oxide,
wherein the transistor comprises:
a second conductor having a second opening;
the first insulator provided inside the second opening;
the third insulator provided inside the first insulator;
the first oxide provided inside the third insulator;
a fifth insulator provided inside the first oxide; and
a third conductor provided inside the fifth insulator,
wherein the second conductor comprises a region overlapping with the first oxide with the first insulator therebetween, and
wherein the third conductor comprises a region overlapping with the first oxide with the fifth insulator therebetween.
2. The semiconductor device according to claim 1 , wherein the second conductor functions as a first gate, and
wherein the third conductor functions as a second gate.
3. The semiconductor device according to claim 1 , wherein the first oxide comprises In, an element M (M is Al, Ga, Y, or Sn), and Zn.
4. The semiconductor device according to claim 1 , wherein the fourth insulator has a stacked-layer structure.
5. The semiconductor device according to claim 1 , wherein the semiconductor device comprises a base,
wherein the semiconductor device comprises a plurality of the memory cells over the base, and
wherein the plurality of the memory cells and the transistor are stacked in a direction perpendicular to one surface of the base.
6. The semiconductor device according to claim 5 , wherein the second insulator is formed over or under the third conductor in a direction perpendicular to one surface of the base.
7. The semiconductor device according to claim 1 , wherein the first insulator is an oxide comprising any one of silicon, aluminum, and hafnium.
8. The semiconductor device according to claim 1 , wherein the third insulator is an oxide comprising any one of silicon, aluminum, and hafnium.