Articles and methods for bonding sheets with carriers
Described herein are organosilicon modification layers and associated deposition methods and inert gas treatments that may be applied on a sheet, a carrier, or both, to control van der Waals, hydrogen and covalent bonding between a sheet and carrier. The modification layers bond the sheet and carrier together such that a permanent bond is prevented at high temperature processing as well as maintaining a sufficient bond to prevent delamination during high temperature processing.
1. An article comprising:
a first sheet comprising a first sheet bonding surface;
a second sheet comprising a second sheet bonding surface;
a modification layer comprising a modification layer bonding surface, the modification layer comprising organosilicon; and
the modification layer bonding surface being in contact with the first sheet bonding surface, and the second sheet bonding surface being coupled with the first sheet bonding surface with the modification layer therebetween,
wherein the first sheet bonding surface is bonded with the modification layer bonding surface with a bond energy of less than 600 mJ/m 2 after holding the article at 600° C. for 10 minutes in a nitrogen atmosphere;
wherein the modification layer is a polymerized amorphous organosilicon which is selected from the group consisting of: phenylsilicon, methylphenylsilicon, diphenylsilicon, methlydiphenylsilicon, triphenylsilicon, and a combination thereof; and
the polymerized amorphous organosilicon has a thickness in the range of 5 nm to 10 microns.
2. The article of claim 1 , the first sheet bonding surface being bonded with the modification layer bonding surface with a bond energy of less than 600 mJ/m 2 after holding the article at 700° C. for 10 minutes in a nitrogen atmosphere.
3. The article of claim 1 , the modification layer comprising a thickness in the range of 10 nm to 500 nm.
4. The article of claim 1 , the modification layer bonding surface comprising an atomic percent ratio of oxygen to silicon in the range of 1 to 3 and an atomic percent ratio of nitrogen to silicon in the range of 0.5 to 1.5, wherein the atomic percent of silicon, oxygen and nitrogen is measured from the modification layer bonding surface after the modification layer bonding surface is exposed to nitrogen containing reactant to increase the surface energy of the modification layer bonding surface to a range of 55 to 75 mJ/m 2 .
5. The article of claim 1 , the modification layer bonding surface comprising an atomic percent ratio of oxygen to silicon in the range of 1 to 3 and an atomic percent ratio of nitrogen to silicon in the range of 2.5 to 6.5, wherein the atomic percent of silicon, oxygen and nitrogen is measured from the modification layer bonding surface after the article is held at 700° C. for 10 minutes in nitrogen containing reactant and then the first sheet is separated from the second sheet after the article is cooled to room temperature.
6. The article of claim 1 , the change in percent of blister area is less than 1 percent after the article is subjected to a temperature cycle by heating in a chamber cycled from room temperature to 700° C. at a rate of 600° C. per minute and held at 700° C. for 10 minutes before allowing the article to cool to room temperature.
7. The article of claim 1 , wherein the first sheet may be separated from the second sheet without breaking the first sheet into two or more pieces after the article is subjected to a temperature cycle by heating in a chamber cycled from room temperature to 700° C. at a rate of 600° C. per minute and held at 700° C. for 10 minutes before allowing the article to cool to room temperature.
8. The article of claim 1 , the first sheet being glass comprising a thickness of 300 microns or less, and the second sheet being glass comprising a thickness of 300 microns or greater.
9. The article of claim 1 , the modification layer comprising a thickness in the range of 100 nm to 250 nm thick.
10. The article of claim 1 , the modification layer comprising a thickness in the range of 500 nm to 1 μm thick.
11. The article of claim 1 , the modification layer comprises a coverage of from 10% to 100% of the bonding surface.
12. The article of claim 1 , the modification layer comprises a coverage of from 20% to 90% of the bonding surface.
13. The article of claim 1 , the modification layer comprises a coverage of from 50% to 90% of the bonding surface.
14. An article comprising:
a first sheet comprising a first sheet bonding surface;
a second sheet comprising a second sheet bonding surface;
a modification layer comprising a modification layer bonding surface comprising an atomic percent ratio of oxygen to silicon in the range of 1 to 3 and an atomic percent ratio of nitrogen to silicon in the range of 0.5 to 1.5, wherein the atomic percent of silicon, oxygen and nitrogen is measured from the modification layer bonding surface after the modification layer bonding surface is exposed to nitrogen containing reactant to increase the surface energy of the modification layer bonding surface to a range of 55 to 75 mJ/m 2 , wherein the modification layer comprises organosilicon; and
the modification layer bonding surface being in contact with the first sheet bonding surface, and the second sheet bonding surface being coupled with the first sheet bonding surface with the modification layer therebetween,
wherein the first sheet bonding surface is bonded with the modification layer bonding surface with a bond energy of less than 600 mJ/m 2 after holding the article at 600° C. for 10 minutes in a nitrogen atmosphere;
wherein the modification layer is a polymerized amorphous organosilicon and has a thickness in the range of 5 nm to 10 microns.
15. The article of claim 14 , the first sheet bonding surface being bonded with the modification layer bonding surface with a bond energy of less than 600 mJ/m 2 after holding the article at 700° C. for 10 minutes in a nitrogen atmosphere.
16. The article of claim 14 , the modification layer comprising a thickness in the range of 10 nm to 500 nm.
17. The article of claim 14 , the polymerized amorphous organosilicon comprises at least one of: phenylsilicon, methylphenylsilicon, diphenylsilicon, methlydiphenylsilicon, triphenylsilicon, and a combination thereof.
18. The article of claim 14 , the change in percent of blister area is less than 1 percent after the article is subjected to a temperature cycle by heating in a chamber cycled from room temperature to 700° C. at a rate of 600° C. per minute and held at 700° C. for 10 minutes before allowing the article to cool to room temperature.
19. The article of claim 14 , wherein the first sheet may be separated from the second sheet without breaking the first sheet into two or more pieces after the article is subjected to a temperature cycle by heating in a chamber cycled from room temperature to 700° C. at a rate of 600° C. per minute and held at 700° C. for 10 minutes before allowing the article to cool to room temperature.
20. The article of claim 14 , the first sheet being glass comprising a thickness of 300 microns or less, and the second sheet being glass comprising a thickness of 300 microns or greater.
21. The article of claim 14 , the modification layer comprising a thickness in the range of 100 nm to 250 nm thick.
22. The article of claim 14 , the modification layer comprising a thickness in the range of 500 nm to 1 μm thick.
23. The article of claim 14 , the modification layer comprises a coverage of from 10% to 100% of the bonding surface.
24. The article of claim 14 , the modification layer comprises a coverage of from 20% to 90% of the bonding surface.
25. The article of claim 14 , the modification layer comprises a coverage of from 50% to 90% of the bonding surface.
26. An article comprising:
a first sheet comprising a first sheet bonding surface;
a second sheet comprising a second sheet bonding surface;
a modification layer comprising a modification layer bonding surface, the modification layer bonding surface comprising an atomic percent ratio of oxygen to silicon in the range of 1 to 3 and an atomic percent ratio of nitrogen to silicon in the range of 2.5 to 6.5, wherein the atomic percent of silicon, oxygen and nitrogen is measured from the modification layer bonding surface after the article is held at 700° C. for 10 minutes in nitrogen containing reactant and then the first sheet is separated from the second sheet after the article is cooled to room temperature, further wherein the modification layer comprises organosilicon; and
the modification layer bonding surface being in contact with the first sheet bonding surface, and the second sheet bonding surface being coupled with the first sheet bonding surface with the modification layer therebetween,
wherein the first sheet bonding surface is bonded with the modification layer bonding surface with a bond energy of less than 600 mJ/m 2 after holding the article at 600° C. for 10 minutes in a nitrogen atmosphere;
wherein the modification layer is a polymerized amorphous organosilicon and has a thickness in the range of 5 nm to 10 microns.
27. The article of claim 26 , the first sheet bonding surface being bonded with the modification layer bonding surface with a bond energy of less than 600 mJ/m 2 after holding the article at 700° C. for 10 minutes in a nitrogen atmosphere.
28. The article of claim 26 , the modification layer comprising a thickness in the range of 10 nm to 500 nm.
29. The article of claim 26 , the polymerized amorphous organosilicon comprises at least one of: phenylsilicon, methylphenylsilicon, diphenylsilicon, methlydiphenylsilicon, triphenylsilicon, and a combination thereof.
30. The article of claim 26 , the change in percent of blister area is less than 1 percent after the article is subjected to a temperature cycle by heating in a chamber cycled from room temperature to 700° C. at a rate of 600° C. per minute and held at 700° C. for 10 minutes before allowing the article to cool to room temperature.
31. The article of claim 26 , wherein the first sheet may be separated from the second sheet without breaking the first sheet into two or more pieces after the article is subjected to a temperature cycle by heating in a chamber cycled from room temperature to 700° C. at a rate of 600° C. per minute and held at 700° C. for 10 minutes before allowing the article to cool to room temperature.
32. The article of claim 26 , the first sheet being glass comprising a thickness of 300 microns or less, and the second sheet being glass comprising a thickness of 300 microns or greater.
33. The article of claim 26 , the modification layer comprising a thickness in the range of 100 nm to 250 nm thick.
34. The article of claim 26 , the modification layer comprising a thickness in the range of 500 nm to 1 μm thick.
35. The article of claim 26 , the modification layer comprises a coverage of from 10% to 100% of the bonding surface.
36. The article of claim 26 , the modification layer comprises a coverage of from 20% to 90% of the bonding surface.
37. The article of claim 26 , the modification layer comprises a coverage of from 50% to 90% of the bonding surface.
38. An article comprising:
a first sheet comprising a first sheet bonding surface;
a second sheet comprising a second sheet bonding surface;
a modification layer having a thickness in the range of 100 nm to 250 nm thick, the modification layer comprising a modification layer bonding surface, the modification layer comprising organosilicon and; and
the modification layer bonding surface being in contact with the first sheet bonding surface, and the second sheet bonding surface being coupled with the first sheet bonding surface with the modification layer therebetween,
wherein the first sheet bonding surface is bonded with the modification layer bonding surface with a bond energy of less than 600 mJ/m 2 after holding the article at 600° C. for 10 minutes in a nitrogen atmosphere;
wherein the modification layer is a polymerized amorphous organosilicon.
39. The article of claim 38 , the first sheet bonding surface being bonded with the modification layer bonding surface with a bond energy of less than 600 mJ/m 2 after holding the article at 700° C. for 10 minutes in a nitrogen atmosphere.
40. The article of claim 38 , the polymerized amorphous organosilicon comprises at least one of: phenylsilicon, methylphenylsilicon, diphenylsilicon, methlydiphenylsilicon, triphenylsilicon, and a combination thereof.
41. The article of claim 38 , wherein the modification layer bonding surface comprises an atomic percent ratio of oxygen to silicon in the range of 1 to 3 and an atomic percent ratio of nitrogen to silicon in the range of 0.5 to 1.5, wherein the atomic percent of silicon, oxygen and nitrogen is measured from the modification layer bonding surface after the modification layer bonding surface is exposed to nitrogen containing reactant to increase the surface energy of the modification layer bonding surface to a range of 55 to 75 mJ/m 2 .
42. The article of claim 38 , the modification layer bonding surface comprising an atomic percent ratio of oxygen to silicon in the range of 1 to 3 and an atomic percent ratio of nitrogen to silicon in the range of 2.5 to 6.5, wherein the atomic percent of silicon, oxygen and nitrogen is measured from the modification layer bonding surface after the article is held at 700° C. for 10 minutes in nitrogen containing reactant and then the first sheet is separated from the second sheet after the article is cooled to room temperature.
43. The article of claim 38 , the change in percent of blister area is less than 1 percent after the article is subjected to a temperature cycle by heating in a chamber cycled from room temperature to 700° C. at a rate of 600° C. per minute and held at 700° C. for 10 minutes before allowing the article to cool to room temperature.
44. The article of claim 38 , wherein the first sheet may be separated from the second sheet without breaking the first sheet into two or more pieces after the article is subjected to a temperature cycle by heating in a chamber cycled from room temperature to 700° C. at a rate of 600° C. per minute and held at 700° C. for 10 minutes before allowing the article to cool to room temperature.
45. The article of claim 38 , the first sheet being glass comprising a thickness of 300 microns or less, and the second sheet being glass comprising a thickness of 300 microns or greater.
46. The article of claim 38 , the modification layer comprises a coverage of from 10% to 100% of the bonding surface.
47. The article of claim 38 , the modification layer comprises a coverage of from 20% to 90% of the bonding surface.
48. The article of claim 38 , the modification layer comprises a coverage of from 50% to 90% of the bonding surface.