Flows of optimization for patterning processes
A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.
1. A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic apparatus comprising an illumination system and projection optics, the method comprising:
obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics and the simulation model accounts for variation of the obscuration across an exposure window produced by the lithographic apparatus; and
configuring, based on the model and by a hardware computer, the portion of the patterning device pattern.
2. The method of claim 1 , wherein the configuring further takes into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.
3. The method of claim 1 , wherein the model models anamorphic demagnification imparted to radiation by the projection optics.
4. The method of claim 1 , wherein the model further accounts for a topography of a patterning device for which the patterning device pattern is configured.
5. The method of claim 1 , wherein the model further accounts for a defocus of a patterning device for which the patterning device pattern is configured.
6. The method of claim 1 , further comprising configuring the patterning device pattern, wherein transmission at all locations of the portion of the patterning device pattern is not restricted to a number of discrete values.
7. The method of claim 1 , further comprising configuring, based on the model, a parameter of an illumination mode used to illuminate the patterning device pattern.
8. The method of claim 7 , wherein the parameter of the illumination mode comprises an optical dose of the lithographic process.
9. The method of claim 8 , further comprising configuring an illumination shape of the illumination mode under a condition that the illumination mode shape can have a freeform shape and/or a parametric shape.
10. The method of claim 1 , wherein the model models reflective projection optics designed to project extreme ultraviolet radiation.
11. The method of claim 1 , wherein a numerical aperture of the projection optics is greater than about 0.33.
12. The method of claim 1 , wherein the configuring the portion of the patterning device pattern comprises placing one or more assist features into the portion.
13. The method of claim 12 , wherein the assist features comprise a sub resolution assist feature, a printable resolution assist feature, or a combination thereof.
14. The method of claim 1 , wherein the model is configured to calculate an aerial image by using an Abbe or Hopkins' formula.
15. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
obtaining a simulation model that models projection of radiation by projection optics of a lithographic apparatus for imaging a portion of a patterning device pattern onto a substrate, wherein the simulation model models an effect of an obscuration in the projection optics and the simulation model accounts for variation of the obscuration across an exposure window produced by the lithographic apparatus; and
configure, based on the model, the portion of the patterning device pattern.
16. A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection apparatus comprising an illumination system and projection optics, the method comprising:
obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics; and
configuring, using an objective function taking an input from the model and by a hardware computer, the portion of the patterning device pattern, the objective function having an anamorphic manufacturing rule or anamorphic manufacturing rule ratio as a penalty thereto.
17. The method of claim 16 , wherein the configuring takes into account an anamorphic manufacturing rule having differing geometric limits or permissions for different directions in a plane of the patterning device pattern.
18. The method of claim 16 , wherein the configuring takes into account an anamorphic manufacturing rule ratio that is used in combination with an isomorphic manufacturing rule specifying the same geometric limits or permissions for all directions in a plane of the patterning device pattern.
19. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
obtain a simulation model that models projection of radiation by projection optics of a lithographic projection apparatus for imaging a portion of a patterning device pattern onto a substrate, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics; and
configure, using an objective function taking an input from the model, the portion of the patterning device pattern, the objective function having an anamorphic manufacturing rule or anamorphic manufacturing rule ratio as a penalty thereto.