Method of making 3D source drains with hybrid stacking for optimum 3D logic layout

1. A method of fabricating a 3D stacked semiconductor device, the method comprising:

forming a plurality of nano-channel stacks on a substrate, each nano-channel stack including a plurality of nano-channels parallel to a surface plane of the substrate and aligned along a second plane perpendicular to the surface plane of the substrate, wherein each nano-channel of a stack is spaced apart from each other nano-channel of the stack, wherein each nano-channel has opposing ends, wherein the plurality of nano-channel stacks are covered by a fill material;

removing the fill material from at least one first nano-channel stack while at least one second nano-channel stack remains covered with the fill material;

forming first source/drain regions on the opposing ends of the at least one first nano-channel stack by a first epitaxial growth process including a first dopant or a second dopant;

depositing a protective film on the first source/drain regions by a first selective deposition process which deposits the protective film on the first source/drain regions without depositing the protective film on other surfaces;

from a top-down direction, removing the fill material from a first portion of the opposing ends of the at least one second nano-channel stack, while one or more nano-channels positioned beneath the first portion remain covered;

forming second source/drain regions on the first portion by a second epitaxial growth process including a first or a second dopant;

depositing the protective film on the second source/drain regions by a second selective deposition process which deposits the protective film on the first source/drain regions without depositing the protective film on other surfaces;

from the top-down direction, removing the fill material from a second portion of the opposing ends of the second nano-channel stack such that the opposing ends of at least one additional nano-channel are uncovered;

forming third source/drain regions on the second portion by a third epitaxial growth process including the first dopant or the second dopant; and

removing the protective film.

2. The method of claim 1 , further comprising,

prior to removing the fill material from the at least one first nano-channel stack, covering a top of at least one second nano-channel stack with a photoresist; and

prior to removing the fill material from a first portion of the opposing ends of the at least one second nano-channel stack, removing the photoresist.

3. The method of claim 1 , comprising:

doping the first source/drain regions with the first dopant, wherein the first dopant is an N+ dopant;

doping the second source/drain regions with the first dopant; and

doping the third source/drain regions with the second dopant, wherein the second dopant is a P+ dopant.

4. The method of claim 1 , comprising:

doping the first source/drain regions with the first dopant, wherein the first dopant is a P+ dopant;

doping the second source/drain regions with the first dopant; and

doping the third source/drain regions with the second dopant, wherein the second dopant is a N+ dopant.

5. The method of claim 1 , further comprising either:

doping the first source/drain regions with the first dopant, wherein the first dopant is an N+ dopant;

doping the second source/drain regions with the second dopant, wherein the second dopant is a P+ dopant;

doping the third source/drain regions with the first dopant; or

doping the first source/drain regions with the first dopant, wherein the first dopant is a P+ dopant;

doping the second source/drain regions with the second dopant, wherein the second dopant is an N+ dopant; and

doping the third source/drain regions with the first dopant.

6. The method of claim 1 , comprising:

doping the first source/drain regions with the first dopant;

doping the second source/drain regions with the second dopant; and

doping the third source/drain regions with the second dopant, wherein the second and third source/drain regions equal all of the source/drain regions of the second stack.

7. The method of claim 1 , further comprising:

forming local interconnects on the first nano-channel stack and the second nano-channel stack;

forming additional metallization;

depositing TiN, TaN and TiAl layers on the metallization;

removing replacement metal gate P-type work function metal (RMG PWFM);

forming a replacement metal gate (RMG);

cutting each gate region of a stack from a gate region of another stack; and

forming dual damascene metal layer horizontal and vertical connections.

8. The method of claim 1 , further comprising, prior to removing the protective film;

depositing the protective film on the third source/drain regions by a third selective deposition process which deposits the protective film on the third source/drain regions without depositing the protective film on other surfaces;

from a top-down direction, removing the fill material from a third portion of the at least one second nano-channel stack that uncovers the opposing ends of one or more fourth nano-channels beneath the second portion;

forming fourth source/drain regions on uncovered nano-channel ends of the third portion by a fourth epitaxial growth process which dopes the fourth source/drain regions with the first dopant or the second dopant;

depositing the protective film on the fourth source/drain regions by a fourth selective deposition process which deposits the protective film on the fourth source/drain regions without depositing the protective film on other surfaces;

from a top-down direction, removing the fill material from a fourth portion of the at least one second nano-channel stack that uncovers the opposing ends of one or more nano-channels beneath the third portion; and

forming fifth source/drain regions on uncovered nano-channel ends of the fourth portion by a fifth epitaxial growth process which dopes the fifth source/drain regions with the first dopant or the second dopant.

9. The method of claim 8 , further comprising:

doping the first source/drain regions with the first dopant;

doping the second source/drain regions with the first dopant;

doping the third source/drain regions with the second dopant;

doping the fourth source/drain regions with the first dopant or the second dopant; and

doping the fifth source/drain regions with the first dopant.

10. The method of claim 8 , comprising:

doping the first source/drain regions with the first dopant, wherein the first dopant is an N+ dopant;

doping the second source/drain regions with the first dopant;

doping the third source/drain regions with the second dopant, wherein the second dopant is a P+ dopant;

doping the fourth source/drain regions with the first dopant; and

doping the fifth source/drain regions with the second dopant.

11. The method of claim 8 , comprising:

doping the first source/drain regions with the first dopant, wherein the first dopant is a P+ dopant;

doping the second source/drain regions with the first dopant;

doping the third source/drain regions with the second dopant, wherein the second dopant is an N+ dopant;

doping the fourth source/drain regions with the first dopant or the second dopant; and

doping the fifth source/drain regions with the second dopant.

12. The method of claim 8 , further comprising:

depositing the protective film on the fifth source/drain regions by a fifth selective deposition process which deposits the protective film on the fifth source/drain regions without depositing the protective film on other surfaces;

in a top-down manner, forming further doped source/drain regions beneath the fifth source/drain regions of the at least one second nano-channel stack by:

stepwise incremental removal of the fill material from one or more opposing ends, each incremental removal followed by epitaxially growing doped source/drain regions on the one or more opposing ends, wherein the doped source/drain regions are alternately doped with the first dopant or the second dopant;

selectively depositing a protective film on the doped source/drain regions before uncovering additional opposing ends in the second nano-channel stack,

wherein the protective film is selectively deposited only on the doped source/drain regions; and

removing the protective film after completing source/drain formation on all of the nano-channel opposing ends of the second nano-channel stack.

13. A method of fabricating a 3D stacked inverter, the method comprising:

forming a plurality of nano-channel stacks on a substrate, each nano-channel stack including a plurality of nano-channels parallel to a surface plane of the substrate and aligned along a second plane perpendicular to the surface plane of the substrate, wherein each nano-channel is spaced apart from each other nano-channel, wherein each nano-channel has opposing ends, wherein the plurality of nano-channel stacks are covered by a fill material;

removing the fill material from a first nano-channel stack while a second nano-channel stack remains covered with the fill material;

forming first source/drain regions on nano-channel ends of the first nano-channel stack by a first epitaxial growth process including a first dopant;

depositing a protective film on the first source/drain regions by a selective deposition process that deposits on the first source/drain regions without depositing the protective film on other surfaces;

removing the fill material from a second nano-channel stack;

forming second source/drain regions on the opposing ends of the second nano-channel stack by a second epitaxial growth process including a second dopant; and

removing the protective film.

14. A method of fabricating a 3D stacked semiconductor device, the method comprising:

forming a plurality of nano-channel stacks on a substrate, each nano-channel stack including a plurality of nano-channels parallel to a surface plane of the substrate and aligned along a second plane perpendicular to the surface plane of the substrate, wherein each nano-channel is spaced apart from each other nano-channel, wherein each nano-channel has opposing ends, wherein the plurality of nano-channel stacks are covered by a fill material;

from a top-down direction, removing the fill material from the opposing ends of a first portion of a first nano-channel stack while the opposing ends of the nano-channels positioned beneath the first portion remain covered with the fill material;

forming first source/drain regions on the opposing ends of the first portion by epitaxial growth while doping the first source/drain regions with a first dopant or a second dopant;

depositing a protective film on the first source/drain regions by a first selective deposition process that deposits the protective film on the first source/drain regions without depositing the protective film on other surfaces;

from the top-down direction, removing the fill material from a second portion of the opposing ends of the first nano-channel stack while the opposing ends of nano-channels positioned beneath the second portion remain covered;

forming second source/drain regions on the opposing ends of the second portion of the first nano-channel stack by epitaxial growth while doping the second source/drain regions with the first dopant or the second dopant;

depositing the protective film on the second source/drain regions by a second selective deposition process that deposits the protective film on the second source/drain regions without depositing the protective film on other surfaces;

from the top-down direction, removing the fill material from a third portion of the first nano-channel stack that uncovers the opposing ends of one or more third nano-channels;

forming third source/drain regions on uncovered nano-channel ends of the third portion of the first nano-channel stack by epitaxial growth while doping the third source/drain regions with the first dopant or the second dopant; and

removing the protective film from all source/drain regions of the first nano-channel stack.

15. The method of claim 14 ,

doping the first source/drain regions with the first dopant, wherein the first dopant is an N+ dopant;

doping the second source/drain regions with the second dopant, wherein the second dopant is a P+ dopant; and

doping the third source/drain regions with the first dopant.

16. The method of claim 14 ,

doping the first source/drain regions with the first dopant, wherein the first dopant is a P+ dopant;

doping the second source/drain regions with the second dopant, wherein the second dopant is an N+ dopant; and

doping the third source/drain regions with the first dopant.

17. The method of claim 14 , further comprising:

forming local interconnects on the first nano-channel stack;

forming additional metallization;

depositing TiN, TaN and TiAl layers on the metallization;

removing replacement metal gate P-type work function metal (RMG PWFM);

forming a replacement metal gate (RMG);

cutting each gate region of a stack from a gate region of another stack; and

forming dual damascene metal layer horizontal and vertical connections.

18. The method of claim 14 , further comprising, prior to removing the protective film:

depositing the protective film on the third source/drain regions by a third selective deposition process which deposits the protective film on the third source/drain regions without depositing the protective film on other surfaces;

in a top-down manner, forming further doped source/drain regions beneath the third portion of the first nano-channel stack by:

stepwise incremental removal of the fill material from one or more portions of opposing ends of the first nano-channel stack, each incremental removal followed by epitaxial growth of source/drain regions on the one or more opposing ends while alternately doping the opposing ends of each portion with the first dopant or the second dopant;

selectively depositing a protective film on the source/drain regions each portion before uncovering additional opposing ends in the first nano-channel stack, wherein the protective film is selectively deposited only on the source/drain regions of the portion; and

removing the protective film after completing source/drain formation of all of the nano-channel opposing ends of the first nano-channel stack.

19. The method of claim 14 , comprising, prior to removing the protective film:

depositing the protective film on the third source/drain regions by a third selective deposition process which deposits the protective film on the third source/drain regions without depositing the protective film on other surfaces;

from a top-down direction, removing the fill material from the opposing ends of a fourth portion of the first nano-channel stack while the opposing ends of nano-channels positioned beneath the fourth portion remain covered;

forming fourth source/drain regions on the opposing ends of the fourth portion by epitaxial growth while doping the fourth source/drain regions with the first dopant or the second dopant;

depositing the protective film on the fourth source/drain regions by a fourth selective deposition process which deposits the protective film on the fourth source/drain regions without depositing the protective film on other surfaces;

from a top-down direction, removing the fill material from the opposing ends of a fifth portion of the first nano-channel stack while the opposing ends of nano-channels positioned beneath the fifth portion remain covered;

forming fifth source/drain regions on the opposing ends of the fifth portion by epitaxial growth while doping the fifth source/drain regions with the first dopant or the second dopant;

depositing the protective film on the fifth source/drain regions by a fifth selective deposition process which deposits the protective film on the fifth source/drain regions without depositing the protective film on other surfaces;

from a top-down direction, removing the fill material from the opposing ends of a sixth portion of the first nano-channel stack; and

forming sixth source/drain regions on the opposing ends of the sixth portion by epitaxial growth while doping the sixth source/drain regions with the first dopant or the second dopant.

20. The method of claim 19 , further comprising:

doping the first source/drain regions with the first dopant;

doping the second source/drain regions with the second dopant;

doping the third source/drain regions with the first dopant;

doping the fourth source/drain regions with the second dopant;

doping the fifth source/drain regions with the first dopant; and

doping the sixth source/drain regions with the second dopant, wherein the first dopant is one of an N+ dopant and a P+ dopant and the second dopant is one of an N+ dopant and a P+ dopant.