Quantum dot device and electronic device comprising an emissive quantum dot and a non-emissive quantum dot
A quantum dot device including an anode and a cathode facing each other, a quantum dot layer disposed between the anode and the cathode, and an electron transport layer disposed between the cathode and the quantum dot layer, wherein the quantum dot layer includes an emissive quantum dot emitting light in at least one part of a wavelength region in a visible region and a non-emissive quantum dot configured to not emit light in a visible region, and a difference between a lowest unoccupied molecular orbital (LUMO) energy level of the non-emissive quantum dot and a LUMO energy level of the electron transport layer is greater than or equal to about 0.5 electronvolts (eV).
1. A quantum dot device, comprising
an anode and a cathode facing each other and disposed apart from each other in a first direction,
a quantum dot layer disposed between the anode and the cathode, and
an electron transport layer disposed between the cathode and the quantum dot layer, the electron transport layer comprising an n-type metal oxide,
wherein the quantum dot layer comprises an emissive quantum dot configured to emit light in at least one part of a wavelength region in a visible region and a non-emissive quantum dot configured to not emit light in the visible region,
the whole of the quantum dot layer in a second direction perpendicular to the first direction is a light-emitting region configured to emit light by the emissive quantum dot,
the emissive quantum dot of the quantum dot layer is in contact with the electron transport layer,
a difference between an absolute value of a lowest unoccupied molecular orbital energy level of the non-emissive quantum dot and an absolute value of a lowest unoccupied molecular orbital energy level of the electron transport layer is about 0.5 electronvolts to about 1.5 electronvolts,
the absolute value of the lowest unoccupied molecular orbital energy level of the non-emissive quantum dot is less than the absolute value of the lowest unoccupied molecular orbital energy level of the emissive quantum dot and the absolute value of the lowest unoccupied molecular orbital energy level of the electron transport layer, respectively, and
the emissive quantum dot has a core-shell structure, the core of the emissive quantum dot comprises zinc, tellurium, and selenium, the shell of the emissive quantum dot comprises ZnSeS, ZnS, or a combination thereof, the non-emissive quantum dot has a core structure without a shell, and the non-emissive quantum dot comprises ZnS, ZnSe, ZnTe, CdS, or a combination thereof.
2. The quantum dot device of claim 1 , wherein the absolute value of the lowest unoccupied molecular orbital energy level of the non-emissive quantum dot is about 0.7 electronvolts to about 1.5 electronvolts less than the absolute value of the lowest unoccupied molecular orbital energy level of the electron transport layer.
3. The quantum dot device of claim 1 , wherein an energy bandgap of the non-emissive quantum dot is larger than an energy bandgap of the emissive quantum dot.
4. The quantum dot device of claim 1 , wherein an energy bandgap of the non-emissive quantum dot is about 3.0 electronvolts to about 5.5 electronvolts.
5. The quantum dot device of claim 1 , wherein a diameter of the non-emissive quantum dot is smaller than a diameter of the emissive quantum dot.
6. The quantum dot device of claim 1 , wherein the quantum dot layer comprises a mixture of the emissive quantum dot and the non-emissive quantum dot.
7. The quantum dot device of claim 6 , wherein the non-emissive quantum dot is present in a lesser amount than the emissive quantum dot.
8. The quantum dot device of claim 6 , wherein the non-emissive quantum dot is present in an amount of greater than 0 weight percent and less than or equal to about 20 weight percent, based on a total amount of the emissive quantum dot and the non-emissive quantum dot.
9. The quantum dot device of claim 1 , wherein the quantum dot layer comprises
a first quantum dot layer comprising the emissive quantum dot and
a second quantum dot layer comprising the non-emissive quantum dot.
10. The quantum dot device of claim 9 , wherein the second quantum dot layer is thinner than the first quantum dot layer.
11. The quantum dot device of claim 9 , wherein a thickness of the second quantum dot layer is about 1 nanometer to about 20 nanometers.
12. The quantum dot device of claim 9 , wherein the first quantum dot layer is closer to the electron transport layer than the second quantum dot layer.
13. The quantum dot device of claim 1 , wherein an absolute value of a highest occupied molecular orbital energy level of the emissive quantum dot is about 5.3 electronvolts to about 7.5 electronvolts.
14. The quantum dot device of claim 1 , further comprising a hole transport layer disposed between the anode and the quantum dot layer and
an absolute value of a highest occupied molecular orbital energy level of the hole transport layer is about 5.2 electronvolts to about 7.3 electronvolts.
15. An electronic device comprising the quantum dot device of claim 1 .