Semiconductor manufacturing apparatus member, and display manufacturing apparatus and semiconductor manufacturing apparatus comprising semiconductor manufacturing apparatus member
According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a main portion and an alumite layer. The main portion includes aluminum. The alumite layer is provided at a front surface of the main portion. The particle-resistant layer is provided on the alumite layer and includes a polycrystalline ceramic. An Al purity of the main portion is 99.00% or more.
1. A semiconductor manufacturing apparatus member, comprising:
a base including a main portion which includes aluminum and an alumite layer provided at a front surface of the main portion; and
a particle-resistant layer provided on the alumite layer and which includes a polycrystalline ceramic,
wherein:
the alumite layer has a thickness greater than a thickness of the particle-resistant layer,
the thickness of the particle-resistant layer is in a range of 1-10 micrometers,
an Al purity of the main portion is 99.00% or more,
the particle-resistant layer is formed by aerosol deposition,
and the particle-resistant layer has an arithmetic average height Sa of 0.060 μm or less after a reference plasma resistance test is performed in which the semiconductor manufacturing apparatus member is exposed to a plasma.
2. The semiconductor manufacturing apparatus member according to claim 1 , wherein a concentration of Si element included in the main portion is less than 1.0%.
3. The semiconductor manufacturing apparatus member according to claim 1 , wherein a concentration of Mg element included in the main portion is 0.05% or less.
4. The semiconductor manufacturing apparatus member according to claim 1 , wherein the particle-resistant layer includes at least one type selected from the group consisting of an oxide of a rare-earth element, a fluoride of a rare-earth element, and an acid fluoride of a rare-earth element.
5. The semiconductor manufacturing apparatus member according to claim 4 , wherein the particle-resistant layer includes an oxide of a rare-earth element and the rare-earth element is at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu.
6. The semiconductor manufacturing apparatus member according to claim 1 , wherein an average crystallite size of the polycrystalline ceramic is at least 3 nm and 50 nm or less.
7. The semiconductor manufacturing apparatus member according to claim 6 , wherein the average crystallite size is at least 3 nm and 30 nm or less.
8. A semiconductor manufacturing apparatus, comprising the semiconductor manufacturing apparatus member according to claim 1 .
9. A display manufacturing apparatus, comprising the semiconductor manufacturing apparatus member according to claim 1 .
10. The semiconductor manufacturing apparatus member according to claim 1 , wherein the alumite layer has been smoothed prior to application of the particle-resistant layer, so that the front surface of the alumite layer has an arithmetic average roughness Ra of 0.2 μm or less.
11. The semiconductor manufacturing apparatus member according to claim 1 , wherein the alumite layer has been smoothed prior to application of the particle-resistant layer, so that the front surface of the alumite layer has an arithmetic average roughness Ra of 0.1 μm or less.
12. A semiconductor manufacturing apparatus member, comprising:
a base including a main portion which includes aluminum and an alumite layer provided at a front surface of the main portion; and
a particle-resistant layer provided on the alumite layer and which includes a polycrystalline ceramic,
wherein:
the alumite layer has a thickness greater than a thickness of the particle-resistant layer,
an Al purity of the main portion is 99.00% or more,
the particle-resistant layer is formed by aerosol deposition,
and the thickness of the particle-resistant layer is in a range of 1-10 micrometers.