Storage element, semiconductor device, magnetic recording array, and method of producing storage element
A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction; an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction; and a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode.
1. A storage element, comprising:
a first ferromagnetic layer;
a second ferromagnetic layer;
a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction;
a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction;
an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction; and
a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode,
wherein the compound part does not overlap with a center of the second ferromagnetic layer in the first direction.
2. A storage element, comprising:
a first ferromagnetic layer;
a second ferromagnetic layer;
a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction;
a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction;
an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction; and
a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode,
wherein the electrode has a first conductive part and a second conductive part from a position close to the second ferromagnetic layer in that order,
wherein the second conductive part has a higher conductivity than the first conductive part, and
wherein the compound part is positioned between the first conductive part and the second conductive part.
3. The storage element according to claim 2 ,
wherein a first surface of the first conductive part on the side of the electrode forms a recess part that is recessed toward the first wiring with respect to a surface along a boundary between the first conductive part and the second conductive part, and
wherein the compound part is provided in the recess part.
4. The storage element according to claim 2 ,
wherein the first conductive part includes a first part overlapping the second ferromagnetic layer in the first direction and a second part which covers the first part and extends in the second direction.
5. The storage element according to claim 1 ,
wherein at least a part of the second ferromagnetic layer does not overlap the compound part in the first direction.
6. The storage element according to claim 1 ,
wherein the compound part includes a part overlapping the first ferromagnetic layer in the first direction.
7. The storage element according to claim 1 ,
wherein the compound part when viewed in the first direction sandwiches the first ferromagnetic layer in the second direction.
8. The storage element according to claim 1 ,
wherein the compound part when viewed in the first direction surrounds the first ferromagnetic layer.
9. The storage element according to claim 1 ,
wherein a first surface of the compound part on the side of the first wiring is curved.
10. The storage element according to claim 1 ,
wherein a thickness of the compound part at a first position in the first direction is thicker than a thickness of the compound part in the first direction at a second position farther from the first ferromagnetic layer than the first position.
11. The storage element according to claim 1 ,
wherein the first wiring contains any of a metal, an alloy, an intermetallic compound, a metal boride, a metal carbide, a metal silicide, and a metal phosphide which have a function of generating a spin current due to a spin Hall effect when a current flows.
12. A semiconductor device, comprising:
the storage element according to claim 1 ; and
a plurality of switching elements that are electrically connected to the storage element.
13. A magnetic recording array comprising a plurality of the storage elements according to claim 1 .
14. The storage element according to claim 3 ,
wherein the first conductive part includes a first part overlapping the second ferromagnetic layer in the first direction and a second part which covers the first part and extends in the second direction.
15. The storage element according to claim 2 ,
wherein at least a part of the second ferromagnetic layer does not overlap the compound part in the first direction.
16. The storage element according to claim 3 ,
wherein at least a part of the second ferromagnetic layer does not overlap the compound part in the first direction.
17. The storage element according to claim 4 ,
wherein at least a part of the second ferromagnetic layer does not overlap the compound part in the first direction.
18. The storage element according to claim 2 ,
wherein the compound part includes a part overlapping the first ferromagnetic layer in the first direction.
19. The storage element according to claim 3 ,
wherein the compound part includes a part overlapping the first ferromagnetic layer in the first direction.