Selector devices

1. A selector device, comprising:

a first electrode, wherein the first electrode includes a material having a work function that is less than 4.5 electron volts;

a second electrode;

a selector material between the first electrode and the second electrode; and

a getter layer between the first electrode and the selector material,

wherein the selector material includes a chalcogenide or wherein the first electrode includes a skin layer of the material around the material.

2. The selector device of claim 1 , wherein the selector material includes hafnium, tantalum, niobium, vanadium, or titanium.

3. The selector device of claim 2 , wherein the selector material includes an oxide.

4. The selector device of claim 1 , wherein the material includes tantalum, titanium, or carbon.

5. The selector device of claim 1 , wherein the getter layer includes tantalum, titanium, hafnium, aluminum, or chromium.

6. The selector device of claim 5 , wherein the getter layer includes a nitride.

7. The selector device of claim 5 , wherein the getter layer is a first getter layer, and the selector device further includes:

a second getter layer between the second electrode and the selector material.

8. The selector device of claim 7 , wherein the material is a first material, and the second electrode includes a second material having a work function that is greater than 4.5 electron volts.

9. The selector device of claim 8 , wherein the second material includes gold, platinum, ruthenium, or copper.

10. The selector device of claim 1 , wherein the material is a first material, and the second electrode includes a second material having a work function that is greater than 4.5 electron volts.

11. A memory cell, comprising:

a storage element; and

a selector device coupled to the storage element, wherein:

the selector device includes a first electrode, a second electrode, a selector material between the first electrode and the second electrode, and a getter layer between the second electrode and the selector material,

the first electrode includes a first material having a work function less than 4.5 electron volts,

the second electrode includes a second material having a work function greater than 4.5 electron volts, and

the selector material includes a chalcogenide or the first electrode includes a skin layer of the material around another material.

12. The memory cell of claim 11 , wherein the first electrode or the second electrode is also an electrode of the storage element.

13. The memory cell of claim 11 , wherein the storage element is a resistive random access memory (RRAM) device, a phase change memory (PCM) device, a metal filament memory device, or a magnetoresistive random access memory (MRAM) device.

14. The memory cell of claim 11 , wherein the memory cell includes a first terminal coupled to a bit line, and the memory cell includes a second terminal coupled to a word line.

15. The memory cell of claim 11 , wherein the getter layer includes tantalum, titanium, hafnium, aluminum, or chromium.

16. The memory cell of claim 15 , wherein the getter layer includes a nitride.

17. A computing device, comprising:

a circuit board;

a processing device coupled to the circuit board; and

a memory array coupled to the processing device, wherein:

the memory array includes a memory cell having a storage element coupled in series with a selector device, the selector device includes a first electrode, a second electrode, and a selector material that includes a chalcogenide, and

the first electrode includes a skin layer of a material having a work function less than 4.5 electron volts.

18. The computing device of claim 17 , wherein the memory cell further includes a getter layer between the first electrode and the selector material.

19. The computing device of claim 18 , wherein the getter layer including tantalum, titanium, hafnium, aluminum, or chromium.

20. The computing device of claim 19 , wherein the getter layer includes a nitride.