Hybrid type semiconductor light emitting device and manufacturing method thereof
The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.
1. A semiconductor light emitting device comprising:
a substrate;
a first semiconductor layer formed on the substrate, the first semiconductor layer including a II-VI semiconductor;
a first cladding layer formed on the first semiconductor layer;
an active layer formed on the first cladding layer, the active layer including a II-VI semiconductor;
a second cladding layer formed on the active layer; and
a second semiconductor layer formed on the second cladding layer, the second semiconductor layer including a I-VII semiconductor.
2. The semiconductor light emitting device of claim 1 , the first semiconductor layer is an n-type semiconductor, and the second semiconductor layer is a p-type semiconductor layer.
3. The semiconductor light emitting device of claim 1 , wherein the first cladding layer includes a II-VI semiconductor.
4. The semiconductor light emitting device of claim 1 , wherein the second cladding layer includes a I-VII semiconductor.
5. The semiconductor light emitting device of claim 1 , further comprising a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a II-VI semiconductor.
6. The semiconductor light emitting device of claim 1 , wherein the I-VII semiconductor is any one of CuCl, CuBr, CuI and AgI, or a combination of two or more thereof.
7. The semiconductor light emitting device of claim 1 , wherein the II-VI semiconductor is any one of CdO, CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, CdZnTe, HgCdTe and HgZnTe or a combination of two or more thereof.
8. The semiconductor light emitting device of claim 1 , further comprising a transparent electrode formed on the second semiconductor layer.
9. A light emitting diode comprising:
a semiconductor device; and
a light conversion layer containing a phosphor, wherein the semiconductor device comprising:
a substrate;
an n-type semiconductor layer formed on the substrate, the n-type semiconductor layer including a II-VI semiconductor;
a first cladding layer formed on the n-type semiconductor layer, the first cladding layer including a II-VI semiconductor;
an active layer formed on the first cladding layer, the active layer including a II-VI semiconductor;
a second cladding layer formed on the active layer, the second cladding layer including a I-VII semiconductor; and
a p-type semiconductor layer formed on the second cladding layer, the p-type semiconductor layer including a I-VII semiconductor.
10. The light emitting diode of claim 9 , further comprising a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a II-VI semiconductor.
11. The light emitting diode of claim 9 , wherein the I-VII semiconductor is any one of CuCl, CuBr, CuI and AgI, or a combination of two or more thereof.
12. The light emitting diode of claim 9 , wherein the II-VI semiconductor is any one of CdO, CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, CdZnTe, HgCdTe and HgZnTe or a combination of two or more thereof.