Driving device and power module
To provide a technique to complement overcurrent protection and short circuit protection. An LVIC includes an overcurrent detector configured to detect whether or not a first current flowing through a load and a semiconductor switching element is abnormal and a short-circuit detector configured to detect whether or not a second current flowing not through the load but through the semiconductor switching element is abnormal. The LVIC interrupts the semiconductor switching element based on a detection result of the overcurrent detector and a detection result of the short-circuit detector.
1. A driving device configured to drive a semiconductor switching element connecting to a load, comprising:
an overcurrent detector configured to detect whether or not a first current flowing through the load and the semiconductor switching element is abnormal; and
a short-circuit detector including a plurality of comparators that provide respective outputs based on respective voltages at the semiconductor switching element, and a timer configured to synchronize the respective outputs of the comparators, such that the short-circuit detector is configured to detect whether or not a second current flowing not through the load and but through the semiconductor switching element is abnormal, wherein
based on a detection result of the overcurrent detector and a detection result of the short-circuit detector, the semiconductor switching element is interrupted.
2. The driving device according to claim 1 , wherein
the short-circuit detector is configured to determine, by detection by a desaturation method, whether or not the second current is abnormal.
3. The driving device according to claim 2 , wherein
the short-circuit detector is configured to detect that the second current is abnormal when a voltage based on a drain voltage of the semiconductor switching element is equal to or higher than a threshold value at a time point at which a predetermined time elapses from a time point at which a gate voltage of the semiconductor switching element has exceeded a threshold value.
4. The driving device according to claim 1 , wherein
the short-circuit detector is configured to detect whether or not the second current is abnormal based on the gate voltage of the semiconductor switching element and a miller period of the semiconductor switching element.
5. The driving device according to claim 2 , wherein
the overcurrent detector is configured to determine, by detection by a shunt method or a sense method, whether or not a first current is abnormal.
6. The driving device according to claim 1 , wherein
the semiconductor switching element includes a wide band gap semiconductor.
7. A power module, comprising:
the driving device according to claim 1 ;
the semiconductor switching element; and
a package covering a connection portion between a drain terminal of the semiconductor switching element and the driving device.
8. The power module according to claim 7 , further comprising
an another semiconductor switching element connected to the load and connected between the semiconductor switching element and a high potential, wherein
the semiconductor switching element is connected to a low potential.
9. A driving device configured to drive a semiconductor switching element connecting to a load, comprising:
an overcurrent detector configured to detect whether or not a first current flowing through the load and the semiconductor switching element is abnormal; and
a short-circuit detector configured to detect whether or not a second current flowing not through the load and but through the semiconductor switching element is abnormal, wherein
based on a detection result of the overcurrent detector and a detection result of the short-circuit detector, the semiconductor switching element is interrupted, and
the short-circuit detector is configured to detect that the second current is abnormal when a voltage based on a drain voltage of the semiconductor switching element is equal to or higher than a threshold value at a time point at which noise has been removed by a filter at the drain voltage of the semiconductor switching element from a time point at which a gate voltage of the semiconductor switching element has exceeded a threshold value.