Cleaning composition, cleaning apparatus, and method of fabricating semiconductor device using the same
A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28 M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.35.
1. A method of cleaning a substrate, the method comprising:
preparing a cleaning liquid that includes a surfactant, deionized water, and an organic compound;
cleaning a substrate using the cleaning liquid; and
drying the substrate,
wherein the preparing the cleaning liquid includes:
providing the deionized water into a chemical tank;
generating the cleaning liquid by mixing the surfactant and the organic compound in the deionized water;
generating plate-shaped seeds of cleaning particles of aligned molecules of the surfactant by heating the cleaning liquid to a first temperature,
detecting an electrical conductivity of the cleaning liquid; and
determining whether the seeds have been generated based on the detected electrical conductivity of the cleaning liquid,
wherein the surfactant is included in the cleaning liquid in a concentration of about 0.04 M to about 0.004 M or a mole fraction of about 0.0003 to about 0.0004,
wherein the organic compound is included in the cleaning liquid in a concentration of about 0.28 M to about 0.42 M,
wherein the surfactant is represented by the following Formula 1′:
(R 1 —O) a —SO 3 NH 4 (1′)
wherein, in Formula 1′,
a is an integer of 1 to 18,
R 1 is a substituted or unsubstituted alkyl group having 1 to 18 carbon atoms, a substituted or unsubstituted alkylene group having 1 to 18 carbon atoms, or a substituted or unsubstituted arylene group having 6 to 14 carbon atoms, and
when a is 3 to 18, (R 1 —O) is repeated randomly or in a block form.
2. The method as claimed in claim 1 , wherein the first temperature is about 26° C.
3. The method as claimed in claim 1 , wherein determining whether the seeds have been generated includes determining whether the electrical conductivity of the cleaning liquid has decreased.
4. The method as claimed in claim 3 , wherein the seeds have a thickness of 1 μm or less.
5. The method as claimed in claim 3 , wherein preparing the cleaning liquid further includes growing the cleaning particles from the seeds by cooling the cleaning liquid to a second temperature, the second temperature being lower than the first temperature, once the seeds have been generated.
6. The method as claimed in claim 5 , wherein the second temperature is about 18° C.
7. The method as claimed in claim 5 , wherein:
preparing the cleaning liquid further includes determining whether the electrical conductivity of the cleaning liquid is saturated, and
when the electrical conductivity of the cleaning liquid is saturated, the cleaning particles have a hexahedral or cubic shape.
8. The method as claimed in claim 5 , wherein the cleaning particles have horizontal and vertical lengths of about 20 μm to about 200 μm and a thickness of about 1 μm to about 10 μm.
9. The method as claimed in claim 5 , wherein the surfactant represented by Formula 1′ is ammonium hexadecyl sulfate.