Process for the generation of thin silicon-containing films

1. A process, comprising depositing a compound of formula (I):

onto a solid substrate,

wherein:

R1, R2, R3, R4, and R5 independently represent hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen,

X is an amine, an aryl group, an imine ligand, or an amidine ligand,

m is 1,

n is 1, and

Si is in the oxidation state +2.

2. The process according to claim 1 , wherein three of R1, R2, R3, R4, and R5 are hydrogen and the remaining two are groups with branching at the atom which is attached to the cyclopentadienyl ring, or not more than two of R1, R2, R3, R4, and R5 are hydrogen.

3. The process according to claim 1 , wherein R1, R2, R3, R4, R5 is methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl, tert-butyl, trimethylsilyl or triethylsilyl.

4. The process according to claim 1 , wherein m is 2 and n is 0.

5. The process according to claim 1 , wherein the compound of formula (I) is deposited from gaseous or aerosol phase onto the solid substrate.

6. The process according to claim 1 , wherein the compound of formula (I) is deposited from solution onto the solid substrate.

7. The process according to claim 1 , wherein the deposited compound of formula (I) is decomposed by removing all ligands L and X.

8. The process according to claim 1 , wherein a sequence of depositing the compound of formula (I) onto a solid substrate and decomposing the deposited compound of formula (I) is performed at least twice.

9. A process, comprising forming a film of the compound of general formula (I), wherein:

R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen,

X is an amine, an aryl group, an imine ligand, or an amidine ligand,

m is 1,

n is 1, and

Si is in the oxidation state +2.