Localized catalyst for enhanced thermal interface material heat transfer
An IC device package includes an IC device that is connected to a lid by a thermal interface material (TIM). A catalyst material is formed upon one or more regions upon an upper surface of the IC device and/or an under surface of the lid. The catalyst material increases the rate of crosslinking of polymer chains of the TIM during TIM curing and/or increases the strength of crosslinks that link polymer chains of the TIM during TIM curing. The catalytically enhanced regions have a higher coefficient of heat transfer relative to non-catalytically enhanced regions. Therefore, the catalytically enhanced regions efficiently transfer heat from the IC device to the lid.
1. An integrated circuit (IC) device package comprising:
an IC device mounted upon a substrate;
a lid comprising a under surface that is connected to an upper surface of the IC device by a polymeric thermal interface material (TIM), the TIM comprising:
a first catalytically enhanced region comprising a first extent of polymer chain cross-linking comprising a first cross-link density enhanced by a catalyst localized upon a first portion of the upper surface of the IC device or upon a first portion of the under surface of the lid; and
a second non-catalytically enhanced region comprising a second extent of polymer chain cross-linking comprising a second cross-link density that is less than the first cross-link density.
2. The IC device package of claim 1 , wherein the first catalytically enhanced region is above a hotspot region of the IC device.
3. The IC device package of claim 1 , wherein the hotspot region is a projection of a core of the IC device onto the upper surface of the IC device.
4. The IC device package of claim 1 , wherein the hotspot region is a projection of a processing region of a core of the IC device onto the upper surface of the IC device.
5. The IC device package of claim 1 , wherein the first catalytically enhanced region has a higher coefficient of heat transfer than the second non-catalytically enhanced region.
6. The IC device package of claim 1 , further comprising
a third poisoned region comprising a third extent of polymer chain cross-linking comprising a third cross-link density poisoned by a poison localized upon a second portion of the upper surface of the IC device or upon a second portion of the under surface of the lid, wherein the third cross-link density is less than the second cross-link density.
7. The IC device package of claim 1 , wherein the first catalytically enhanced region is above a circumferential periphery region of the IC device.
8. A method of fabricating an integrated circuit (IC) device, the method comprising:
connecting an IC device upon a substrate;
forming a catalyst material upon a first portion of an upper surface of the IC device or upon a first portion of an undersurface of a lid;
connecting the undersurface of the lid to the upper surface of the IC device with a polymeric thermal interface material (TIM); and
curing the TIM to form:
a first catalytically enhanced region comprising a first extent of polymer chain cross-linking comprising a first cross-link density enhanced by the catalyst material; and
a second non-catalytically enhanced region comprising a second extent of polymer chain cross-linking comprising a second cross-link density smaller than the first cross-link density.
9. The method of claim 8 , wherein the catalyst material is formed solely within a hotspot region of the IC device.
10. The method of claim 9 , wherein the hotspot region is a projection of a core of the IC device onto the surface in which the catalyst material is formed.
11. The method of claim 9 , wherein the hotspot region is a projection of a processing region of a core of the IC device onto the surface in which the catalyst material is formed.
12. The method of claim 8 , further comprising:
forming a poison material upon a second portion of the upper surface of the IC device or upon a second portion of the undersurface of the lid.
13. The method of claim 12 , wherein curing the TIM further forms a third poisoned region comprising a third extent of polymer chain cross-linking comprising a third cross-link density poisoned by the poison material, the third cross-link density smaller than the second cross-link density.
14. The method of claim 13 , wherein the first catalytically enhanced region is above a circumferential periphery region of the IC device.
15. A method comprising:
connecting an integrated circuit (IC) device and a lid with a polymeric thermal interface material (TIM), the TIM comprising:
a first catalytically enhanced region comprising a first extent of polymer chain cross-linking comprising a first cross-link density enhanced by a catalyst localized upon a first portion of an upper surface of the IC device or upon a first portion of an under surface of the lid; and
a second non-catalytically enhanced region comprising a second extent of polymer chain cross-linking comprising a second cross-link density that is less than the first cross-link density.
16. The method of claim 15 , wherein the first catalytically enhanced region is connected to a hotspot region of the IC device.
17. The method of claim 16 , wherein the hotspot region is a projection of a core of the IC device onto the upper surface of the IC device that is connected to the first catalytically enhanced region.
18. The method of claim 17 , wherein the hotspot region is a projection of a processing region of a core of the IC device that is connected to the first catalytically enhanced region.
19. The method of claim 15 , wherein the first catalytically enhanced region has a higher coefficient of heat transfer than the second non-catalytically enhanced region.
20. The method of claim 15 , wherein the TIM further comprises:
a third poisoned region comprising a third extent of polymer chain cross-linking comprising a third cross-link density poisoned by a poison localized upon a second portion of the upper surface of the IC device or upon a second portion of the under surface of the lid, wherein the third cross-link density is less than the second cross-link density.