IP Library › Granted Patent US 11,152,783
Granted Patent B2
US 11,152,783 · App. 16/358,964 · Granted Oct 19, 2021

Circuit of protection against electrostatic discharges

Inventor: Mathieu Rouviere (Tours, FR)
Assignee: STMicroelectronics (Tours) SAS
H02H9/04H01L27/0255H01L27/0262H02H9/046H01L27/02H01L27/0248H01L27/0629
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Quick Facts
Patent No.
US 11,152,783
App. No.
16/358,964
Granted
Oct 19, 2021
Kind
B2
Abstract

A circuit for protecting against electrostatic discharges includes two avalanche circuit components having different turn-on delays with respect to a beginning of an electrostatic discharge. The two avalanche circuit components are coupled in parallel. The avalanche circuit component closer to an output node has a turn-on delay on the order of 30 ns, while the avalanche circuit component closer to an input node has a turn-on delay on the order of 1 ns.

Claims (36)

1. A circuit for protection against electrostatic discharges, comprising:

a first avalanche circuit component comprising a thyristor having a cathode directly electrically connected to a reference potential node, and having an anode coupled to a first node through a diode;

a second avalanche circuit component;

wherein the first and second avalanche circuit components are coupled in parallel;

wherein the second avalanche circuit component comprises:

an avalanche diode having a cathode coupled to a second node and an anode coupled to the reference potential node; and

a plurality of series connected avalanche diodes, with a first of the plurality of series connected avalanche diodes having an anode coupled to the second node, and with a last of plurality of series connected avalanche diodes having a cathode coupled to the reference potential node; and

wherein the first and second avalanche circuit components have different turn-on delays with respect to a beginning of an electrostatic discharge.

2. The circuit of claim 1 , wherein the reference potential node is at ground.

3. The circuit of claim 1 , further comprising a resistor directly electrically connected between the second node and the first node.

4. The circuit of claim 3 , wherein the resistor has a resistivity of approximately 1.5 ohms.

5. The circuit of claim 1 , wherein the first node is an input node and the second node is an output node.

6. The circuit of claim 1 , wherein the first and second avalanche circuit components have different turn-on delays.

7. The circuit of claim 6 , wherein the different turn-on delays differ by a time in a range of tens of nanoseconds.

8. An electrostatic discharge (ESD) protection discharge circuit, comprising:

an input node;

an output node;

a first avalanche circuit component comprising a thyristor having a cathode directly electrically connected to a reference node, and having an anode coupled to the input node through a first diode; and

a second avalanche circuit component coupled between the output node and the reference node;

wherein the second avalanche circuit component comprises:

an avalanche diode having a cathode coupled to the output node and an anode coupled to the reference node; and

a plurality of series connected avalanche diodes, with a first of the plurality of series connected avalanche diodes having an anode coupled to the output node, and with a last of plurality of series connected avalanche diodes having a cathode coupled to the reference node;

wherein the first avalanche circuit component has a turn-on delay longer than a turn-on delay of the second avalanche circuit component.

9. The ESD protection circuit of claim 8 , wherein the turn-on delay of the first avalanche circuit component is approximately 30 ns greater than the turn-on delay of the second avalanche circuit component.

10. The ESD protection circuit of claim 8 , wherein the first avalanche circuit component comprises:

a second diode having a cathode coupled to the input node and an anode coupled to the reference node.

11. The ESD protection circuit of claim 8 , further comprising an avalanche diode having a cathode coupled to a gate of the thyristor and an anode coupled to the reference node.

12. The ESD protection circuit of claim 8 , wherein the plurality of series connected avalanche diodes comprises first, second, third, and fourth avalanche diodes, and wherein:

an anode of the first avalanche diode is coupled to the output node;

an anode of the second avalanche diode is coupled to a cathode of the first avalanche diode;

an anode of the third avalanche diode is coupled to a cathode of the second avalanche diode;

an anode of the fourth avalanche diode is coupled to a cathode of the third avalanche diode; and

a cathode of the fourth avalanche diode is coupled to the reference node.

13. The ESD protection circuit of claim 8 , further comprising a resistor coupled between the input node and the output node.

14. The ESD protection circuit of claim 8 , wherein the first diode has an anode directly electrically connected to the input node and a cathode directly electrically connected to the anode of said thyristor.

15. The circuit of claim 1 , wherein the diode has an anode directly electrically connected to the first node and a cathode directly electrically connected to the anode of said thyristor.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2019
From: ROUVIERE, MATHIEU
To: STMICROELECTRONICS (TOURS) SAS
Reel/Frame 048645/0890 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2019
From: ROUVIERE, MATHIEU
To: STMICROELECTRONICS (TOURS) SAS
Reel/Frame 048647/0260 →
Priority Claims (1)
FR 1852482 · Mar 22, 2018 · national
Continuity (1)
Related Publication 20190296545A1 · Sep 26, 2019