Temperature controlled substrate support assembly
Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heater assembly. The substrate support assembly comprises an upper surface and a lower surface; one or more main resistive heaters disposed in the substrate support; and a plurality of heaters in column with the main resistive heaters and disposed in the substrate support. A quantity of the heaters is an order of magnitude greater than a quantity of the main resistive heaters and the heaters are independently controllable relative to each other as well as the main resistive heater.
1. An electrostatic chuck (ESC), comprising:
a controller; and
a dielectric body formed of a single coherent mass of ceramic material, the dielectric body comprising
an upper surface and a lower surface,
a chucking electrode disposed in the dielectric body,
one or more main resistive heaters disposed in the dielectric body, and
a plurality of secondary heaters in column with the main resistive heaters, each secondary heater coupled to the controller and coupled to an individual lead and an individual switch, the controller configured to provide power to each individual switch in order to heat each secondary heater, the plurality of secondary heaters disposed in the dielectric body, wherein a quantity of the secondary heaters is greater than a quantity of the main resistive heaters and, wherein the controller is configured to enable each combination of individual switches to control each combination of individual secondary heaters of the plurality of secondary heaters to be independently controllable between an on and an off state without altering an on state for all other individual secondary heaters as well as the one or more main resistive heaters.
2. The ESC of claim 1 , wherein the plurality of secondary heaters are concentrically arranged about a center of the dielectric body into groups of secondary heaters along a common radius.
3. The ESC of claim 2 , wherein the plurality of secondary heaters are further arranged in a polar grid.
4. The ESC of claim 1 , wherein the chucking electrode is disposed between the plurality of secondary heaters and the upper surface.
5. A substrate support assembly, comprising:
a substrate support having a dielectric body, the dielectric body comprising
a substrate support surface and a lower surface and
a plurality of resistive secondary heaters disposed in the dielectric body of the substrate support, each resistive secondary heater coupled to an individual lead and an individual switch, each of the plurality of resistive secondary heaters is independently controllable relative to each other;
a main resistive heater coupled to or disposed in the dielectric body, the plurality of resistive secondary heaters independently controllable relative to the main resistive heater; and
a heater controller coupled to the plurality of resistive secondary heaters, the heater controller configured to provide power to each individual switch in order to heat each resistive secondary heater, wherein the heater controller includes an optical controller and an electrical power controller, the optical controller optically coupled to a respective state switch for each resistive secondary heater within the plurality of resistive secondary heaters and wherein the heater controller is configured to enable each combination of individual switches to independently power each combination of resistive secondary heaters relative to a quantity of all other resistive secondary heaters, the quantity being greater than or equal to 2.
6. The substrate support assembly of claim 5 , wherein the substrate support is an electrostatic chuck and the dielectric body of the electrostatic chuck is ceramic.
7. The substrate support assembly of claim 5 , wherein the plurality of resistive secondary heaters are concentrically arranged in groups of resistive secondary heaters along a common radius.
8. The substrate support assembly of claim 7 , wherein the main resistive heater is formed on the lower surface of the dielectric body.
9. The substrate support assembly of claim 7 , wherein the main resistive heater is disposed in a polymer body coupled to the lower surface of the dielectric body.
10. The substrate support assembly of claim 5 , further comprising:
a cooling plate coupled to the substrate support.
11. The substrate support assembly of claim 5 , wherein a chucking electrode is disposed between the plurality of resistive secondary heaters and the substrate support surface.
12. A processing chamber comprising:
a chamber body;
a controller; and
a substrate support assembly, having an
electrostatic chuck, the electrostatic chuck having a dielectric body formed of a single coherent mass of ceramic material, the dielectric body comprising
an upper surface and a lower surface,
a chucking electrode disposed within the dielectric body,
one or more main resistive heaters disposed in the dielectric body, and
a plurality of secondary heaters in column with the main resistive heaters and being concentrically arranged about a center of the dielectric body into groups of secondary heaters along a common radius within the dielectric body, each secondary heater coupled to the controller and coupled to an individual lead and an individual switch, the controller configured to provide power to each individual switch in order to heat each secondary heater, wherein a quantity of the secondary heaters is greater than a quantity of the main resistive heaters and, wherein the controller is configured to enable each combination of individual switches to control each combination of secondary heaters within the plurality of secondary heaters to be independently addressable and controlled between an off and an on state relative to an on state for all other secondary heaters as well as the main resistive heaters and wherein each combination of secondary heaters is configured to receive a voltage or current independently of a voltage or current applied to each of the other secondary heaters.
13. The processing chamber of claim 12 , wherein the plurality of secondary heaters are further arranged in a polar grid.
14. The processing chamber of claim 12 , wherein the chucking electrode is disposed between the plurality of secondary heaters and the upper surface.
15. The processing chamber of claim 12 , further comprising:
a heater controller for regulating a temperature output for each secondary heater coupled to a cooling plate, the heater controller providing a range of current or voltage to each secondary heater independently of other secondary heaters.
16. The processing chamber of claim 15 , wherein the heater controller includes a fiber optics control circuit and an electrical power control.