Package with wall-side capacitors
An apparatus is provided which comprises: a plurality of organic dielectric layers forming a substrate, a plurality of first conductive contacts on a top surface of the substrate, a plurality of second conductive contacts on a bottom surface of the substrate, a plurality of third conductive contacts on a side wall surface of the substrate, and one or more discrete capacitor(s) coupled with the third conductive contacts on the side wall surface. Other embodiments are also disclosed and claimed.
1. An apparatus comprising:
a plurality of dielectric layers on opposite sides of a metal core forming a substrate;
a plurality of first conductive contacts on a top surface of the substrate;
a plurality of second conductive contacts on a bottom surface of the substrate opposite of the top surface;
a side wall surface of the substrate, the side wall surface of the substrate perpendicular to the top surface of the substrate;
a plurality of third conductive contacts on the side wall surface of the substrate; and
one or more discrete capacitor(s) coupled with a pair of the third conductive contacts on the side wall surface, wherein the pair of the third conductive contacts are present on opposite sides of the metal core.
2. The apparatus of claim 1 , wherein the one or more discrete capacitor(s) comprise a surface-mount device (SMD).
3. The apparatus of claim 1 , wherein the one or more discrete capacitor(s) comprises a 0402 package capacitor.
4. An apparatus comprising:
one or more integrated circuit die(s); and
a substrate, wherein the substrate comprises:
a plurality of dielectric layers on opposite sides of a metal core;
a top surface of the substrate;
a plurality of first conductive contacts on the top surface of the substrate, wherein the first conductive contacts are coupled with the one or more integrated circuit die(s);
a bottom surface of the substrate;
a plurality of second conductive contacts on the bottom surface of the substrate;
a side wall surface of the substrate;
a plurality of third conductive contacts on the side wall surface of the substrate; and
one or more discrete capacitor(s) coupled with a pair of the third conductive contacts on the side wall surface, wherein the pair of the third conductive contacts are present on opposite sides of the metal core.
5. The apparatus of claim 4 , wherein the one or more discrete capacitor(s) comprise a height of greater than about 200 um.
6. The apparatus of claim 4 , wherein the one or more discrete capacitor(s) comprise a surface-mount device (SMD).
7. The apparatus of claim 4 , wherein the one or more discrete capacitor(s) comprises a 0402 package capacitor.
8. A system comprising:
a display subsystem;
a wireless communication interface; and
an integrated circuit package, the integrated circuit package comprising:
one or more integrated circuit die(s); and
a substrate coupled with the die(s), wherein the substrate comprises:
a plurality of dielectric layers built upon opposite sides of a metal substrate core;
a plurality of first conductive contacts on a top surface of the substrate, wherein the first conductive contacts are coupled with the one or more integrated circuit die(s);
a plurality of second conductive contacts on a bottom surface of the substrate;
a plurality of third conductive contacts on a side wall surface of the substrate; and
one or more discrete capacitor(s) coupled with a pair of the third conductive contacts on the side wall surface, wherein the pair of the third conductive contacts are present on opposite sides of the metal core.
9. The system of claim 8 , wherein the one or more discrete capacitor(s) comprise a surface-mount device (SMD).
10. The system of claim 8 , wherein the one or more discrete capacitor(s) comprises a 0402 package capacitor.
11. A method comprising:
forming a substrate, the substrate comprising:
a plurality of dielectric layers;
a plurality of first conductive contacts on a top surface of the substrate;
a plurality of second conductive contacts on a bottom surface of the substrate; and
a plurality of third conductive contacts on a side wall surface of the substrate wherein forming the plurality of third conductive contacts on a side wall surface of the substrate comprises:
forming vias that extend beyond an imaginary reference line; and
severing along the imaginary reference line; and
attaching one or more discrete capacitor(s) to the third conductive contacts on the side wall surface of the substrate.
12. The method of claim 11 , wherein attaching one or more discrete capacitor(s) to the third conductive contacts on a side wall surface of the substrate comprises:
plating the third conductive contacts with a solder paste;
coupling the discrete capacitor in contact with the plated contacts; and
heating the solder paste.
13. The method of claim 12 , wherein heating the solder paste comprises hot gas convection.
14. The method of claim 11 , wherein forming a plurality of dielectric layers comprises forming organic dielectric layers on a substrate core.
15. The method of claim 14 , further comprising forming third conductive contacts on a side wall surface of the substrate that span the substrate core.
16. The method of claim 11 , wherein attaching one or more discrete capacitor(s) to the third conductive contacts on a side wall surface of the substrate comprises attaching a 0402 package capacitor to the third conductive contacts on a side wall surface of the substrate.