IP Library › Granted Patent US 11,159,895
Granted Patent B2
US 11,159,895 · App. 16/986,302 · Granted Oct 26, 2021

Piezoelectric type and capacitive type combined MEMS microphone

Inventors: Bei Tong (Shenzhen, CN); Zhan Zhan (Shenzhen, CN); Yang Li (Shenzhen, CN); Kahkeen Lai (Singapore, SG); Xiaohui Zhong (Singapore, SG); Lian Duan (Shenzhen, CN)
Assignee: AAC ACOUSTIC TECHNOLOGIES (SHENZHEN) CO., LTD.
H04R23/02B81B3/0021H04R7/06H04R17/02H04R19/04B81B2201/0257B81B2203/0127B81B2203/0315B81B2203/04H04R2201/003
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Quick Facts
Patent No.
US 11,159,895
App. No.
16/986,302
Granted
Oct 26, 2021
Kind
B2
Abstract

Provided is a piezoelectric type and capacitive type combined MEMS microphone, comprising a base with a back cavity and a capacitor system arranged on the base; wherein, the capacitor system comprises a back plate and a diaphragm; the back plate is opposite to and apart from the diaphragm to form a first sound cavity; a piezoelectric diaphragm structure is between the capacitor system and the base; a second sound cavity is formed between the capacitor system and the piezoelectric diaphragm structure; the second sound cavity is at least in communication with the first sound cavity or the back cavity; the piezoelectric type and capacitive type combined MEMS microphone can output two groups of electric signals comprising a group of electric signals output from the capacitor system and a group of electric signals output from the piezoelectric diaphragm structure, thus improving sensitivity of the microphone.

Claims (40)

1. A piezoelectric type and capacitive type combined MEMS microphone, comprising a base with a back cavity, and a capacitor system arranged on the base;

wherein, the capacitor system comprises a back plate and a diaphragm, the back plate is opposite to and spaced apart from the diaphragm to form a first sound cavity;

wherein, a piezoelectric diaphragm structure is further arranged between the capacitor system and the base; a second sound cavity is formed between the capacitor system and the piezoelectric diaphragm structure, and the second sound cavity is at least in communication with the first sound cavity or the back cavity.

2. The piezoelectric type and capacitive type combined MEMS microphone according to claim 1 , wherein, the first sound cavity, the second sound cavity and the back cavity are in communication;

a first acoustic hole communicating the first sound cavity and the second sound cavity is formed in the capacitor system; and

a second acoustic hole communicating the second sound cavity and the back cavity is formed through the piezoelectric diaphragm structure.

3. The piezoelectric type and capacitive type combined MEMS microphone according to claim 2 , wherein, the piezoelectric diaphragm structure comprises a first electrode sheet, a piezoelectric diaphragm, and a second electrode sheet that are sequentially stacked;

the first electrode sheet is provided on a side of the piezoelectric diaphragm that faces the capacitor system; and the second electrode sheet is provided on a side of the piezoelectric diaphragm that faces the base.

4. The piezoelectric type and capacitive type combined MEMS microphone according to claim 3 , wherein, a center of the first electrode sheet, a center of the piezoelectric diaphragm, and a center of the second electrode sheet are all on a same vertical line;

an area of the first electrode sheet is smaller than an area of the piezoelectric diaphragm;

the second acoustic hole is formed through the piezoelectric diaphragm and the second electrode sheet, and the second acoustic hole is around an outer circumferential side of the first electrode sheet.

5. The piezoelectric type and capacitive type combined MEMS microphone according to claim 4 , wherein, the first electrode sheet has a circular shape or a square shape.

6. The piezoelectric type and capacitive type combined MEMS microphone according to claim 3 , wherein, a center of the first electrode sheet, a center of the piezoelectric diaphragm, and a center of the second electrode sheet are all on a same vertical line;

the second acoustic hole is formed through the piezoelectric diaphragm and the second electrode sheet, and the second acoustic hole is provided at an inner circumferential side of the first electrode sheet.

7. The piezoelectric type and capacitive type combined MEMS microphone according to claim 6 , wherein, the first electrode sheet has a circular ring shape, or a hollow rectangular shape.

8. The piezoelectric type and capacitive type combined MEMS microphone according to claim 3 , wherein, a center of the first electrode sheet, a center of the piezoelectric diaphragm, and a center of the second electrode sheet are all on a same vertical line;

the second acoustic hole is formed through the piezoelectric diaphragm and the second electrode sheet;

the first electrode sheet comprises at least two electrode bodies;

a slit is formed between two adjacent electrode bodies, and the slit is in communication with the second acoustic hole;

two or more of the electrode bodies form a circle or a square.

9. The piezoelectric type and capacitive type combined MEMS microphone according to claim 3 , wherein, the piezoelectric diaphragm structure further comprises a first electrode line and a first electrode terminal, and the first electrode sheet is connected to the first electrode terminal through the first electrode line.

10. The piezoelectric type and capacitive type combined MEMS microphone according to claim 4 , wherein, the piezoelectric diaphragm structure further comprises a first electrode line and a first electrode terminal, and the first electrode sheet is connected to the first electrode terminal through the first electrode line.

11. The piezoelectric type and capacitive type combined MEMS microphone according to claim 6 , wherein, the piezoelectric diaphragm structure further comprises a first electrode line and a first electrode terminal, and the first electrode sheet is connected to the first electrode terminal through the first electrode line.

12. The piezoelectric type and capacitive type combined MEMS microphone according to claim 8 , wherein, the piezoelectric diaphragm structure further comprises a first electrode line and a first electrode terminal, and the first electrode sheet is connected to the first electrode terminal through the first electrode line.

13. The piezoelectric type and capacitive type combined MEMS microphone according to claim 3 , wherein, the piezoelectric diaphragm structure further comprises an insulating base layer, the second electrode sheet is provided on the insulating base layer, and a shape of the insulating base layer is the same as a shape of the second electrode sheet.

14. The piezoelectric type and capacitive type combined MEMS microphone according to claim 4 , wherein, the piezoelectric diaphragm structure further comprises an insulating base layer, the second electrode sheet is provided on the insulating base layer, and a shape of the insulating base layer is the same as a shape of the second electrode sheet.

15. The piezoelectric type and capacitive type combined MEMS microphone according to claim 6 , wherein, the piezoelectric diaphragm structure further comprises an insulating base layer, the second electrode sheet is provided on the insulating base layer, and a shape of the insulating base layer is the same as a shape of the second electrode sheet.

16. The piezoelectric type and capacitive type combined MEMS microphone according to claim 8 , wherein, the piezoelectric diaphragm structure further comprises an insulating base layer, the second electrode sheet is provided on the insulating base layer, and a shape of the insulating base layer is the same as a shape of the second electrode sheet.

17. The piezoelectric type and capacitive type combined MEMS microphone according to claim 2 , wherein, a first insulating layer is provided between the piezoelectric diaphragm structure and the base; the first insulating layer is connected with the piezoelectric diaphragm structure or the base;

a second insulating layer is provided between the capacitor system and the piezoelectric diaphragm structure; the second insulating layer is connected with the capacitor system or the piezoelectric diaphragm structure;

a third insulating layer is provided between the diaphragm and the back plate; the third insulating layer is connected with the diaphragm or the back plate.

18. The piezoelectric type and capacitive type combined MEMS microphone according to claim 3 , wherein, a first insulating layer is provided between the piezoelectric diaphragm structure and the base; the first insulating layer is connected with the piezoelectric diaphragm structure or the base;

a second insulating layer is provided between the capacitor system and the piezoelectric diaphragm structure; the second insulating layer is connected with the capacitor system or the piezoelectric diaphragm structure;

a third insulating layer is provided between the diaphragm and the back plate; the third insulating layer is connected with the diaphragm or the back plate.

19. The piezoelectric type and capacitive type combined MEMS microphone according to claim 4 , wherein, a first insulating layer is provided between the piezoelectric diaphragm structure and the base; the first insulating layer is connected with the piezoelectric diaphragm structure or the base;

a second insulating layer is provided between the capacitor system and the piezoelectric diaphragm structure; the second insulating layer is connected with the capacitor system or the piezoelectric diaphragm structure;

a third insulating layer is provided between the diaphragm and the back plate; the third insulating layer is connected with the diaphragm or the back plate.

20. The piezoelectric type and capacitive type combined MEMS microphone according to claim 6 , wherein, a first insulating layer is provided between the piezoelectric diaphragm structure and the base; the first insulating layer is connected with the piezoelectric diaphragm structure or the base;

a second insulating layer is provided between the capacitor system and the piezoelectric diaphragm structure; the second insulating layer is connected with the capacitor system or the piezoelectric diaphragm structure;

a third insulating layer is provided between the diaphragm and the back plate; the third insulating layer is connected with the diaphragm or the back plate.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE THE ASSIGNEE NAME PREVIOUSLY RECORDED AT REEL: 506223 FRAME: 083. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 11, 2021
From: TONG, BEI; ZHAN, ZHAN; LI, YANG; LAI, KAHKEEN; ZHONG, XIAOHUI; DUAN, LIAN
To: AAC ACOUSTIC TECHNOLOGIES (SHENZHEN) CO., LTD.
Reel/Frame 057765/0088 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 27, 2020
From: TONG, BEI; ZHAN, ZHAN; LI, YANG; LAI, KAHKEEN; ZHONG, XIAOHUI; DUAN, LIAN
To: AAC OPTICS SOLUTIONS PTE. LTD.
Reel/Frame 053609/0759 →
Continuity (2)
Continuation PCTCN2019093948 · Jun 29, 2019
Related Publication 20200413203A1 · Dec 31, 2020