Semiconductor device with adhesion layer and method of making
A method of making a semiconductor device includes forming an opening in a dielectric layer. The method further includes depositing a barrier layer in the opening. The method further includes depositing an adhesion layer over the barrier layer. The method further includes treating the adhesion layer using a hydrogen-containing plasma.
1. A method of making a semiconductor device, comprising:
forming an opening in a dielectric layer;
depositing a barrier layer in the opening;
depositing an adhesion layer over the barrier layer;
treating the adhesion layer using a hydrogen-containing plasma;
forming a conductive layer over the adhesion layer; and
reacting the conductive layer with the adhesion layer to form a composite material at an interface of the adhesion layer and the conductive layer.
2. The method of claim 1 , wherein treating the adhesion layer comprises removing oxygen atoms from a surface of the adhesion layer.
3. The method of claim 1 , wherein depositing the adhesion layer comprises depositing at least one of titanium, titanium nitride, cobalt, nickel, or tungsten nitride.
4. The method of claim 1 , wherein the forming the opening comprises exposing a source/drain region in a semiconductor workpiece.
5. The method of claim 1 , wherein depositing the adhesion layer comprises depositing the adhesion layer over a top-most surface of the dielectric layer.
6. The method of claim 1 , wherein treating the adhesion layer comprises removing oxygen atoms from an entirety of the adhesion layer.
7. The method of claim 1 , wherein reacting the adhesion layer with the conductive layer comprises performing a redox reaction following formation of the conductive layer.
8. The method of claim 1 , wherein the treating of the adhesion layer is performed in-situ with the depositing of the adhesion layer.
9. A method of making a semiconductor device, comprising:
forming an opening in a dielectric layer;
depositing an adhesion layer in the opening;
treating the adhesion layer using a hydrogen-containing plasma;
forming a conductive layer over the treated adhesion layer; and
performing a redox reaction on the conductive layer and the treated adhesion layer.
10. The method of claim 9 , wherein performing the redox reaction comprises performing the redox reaction simultaneously with forming the conductive layer.
11. The method of claim 9 , wherein performing the redox reaction comprises reacting the conductive layer with the treated adhesion layer.
12. The method of claim 9 , wherein performing the redox reaction comprises performing the redox reaction after forming the conductive layer.
13. A method of making a semiconductor device, comprising:
depositing an adhesion layer over a substrate, wherein the adhesive layer defines a cavity;
treating the adhesion layer using a hydrogen-containing plasma;
filling the cavity in the treated adhesive layer with a conductive layer; and
performing a redox reaction on the conductive layer and the treated adhesion layer.
14. The method of claim 13 , wherein performing the redox reaction comprises reacting the treated adhesion layer with the conductive layer to form a composite material at an interface between the treated adhesion layer and the conductive layer.
15. The method of claim 13 , wherein treating the adhesive layer comprises removing oxygen from the adhesion layer.
16. The method of claim 15 , wherein removing oxygen comprises removing oxygen from the adhesion layer to a thickness ranging from about 7 angstroms to about 25 angstroms.
17. The method of claim 15 , wherein removing oxygen comprises removing oxygen from an entirety of the adhesion layer.
18. The method of claim 15 , wherein oxygen remains in a portion of the adhesion layer closest to the substrate following the removing oxygen.
19. The method of claim 13 , further comprising planarizing the conductive layer and the treated adhesion layer to define co-planar top surfaces.
20. The method of claim 13 , wherein filling the cavity with the conductive layer comprises forming an electrical connection to a source/drain feature.