Method of producing an electrode material for a battery electrode
The present invention relates to a method for producing an electrode material for a battery electrode, in particular for a lithium-ion battery, wherein said electrode material comprises nanostructured silicon carbide, comprising the steps of: a) providing a mixture including a silicon source, a carbon source and a dopant, wherein at least the silicon source and the carbon source are present in common in particles of a solid granulate; b) treating the mixture provided in step a) at a temperature in the range from ≥1400° C. to ≤2000° C., in particular in a range from ≥1650° C. to ≤1850° C., wherein step b) is carried out in a reactor that has a depositing surface the temperature of which relative to at least one other inner reactor surface is reduced. In summary, a method described above enables to combine a simple and cost-efficient production with a high cycle stability.
1. A method for producing a battery electrode using an electrode material for a battery electrode, in particular for a lithium-ion battery, wherein said electrode material includes fibrous nanostructured silicon carbide, having a carbon-containing protective layer formed on the silicon carbide, comprising the steps of:
a) providing a mixture including a silicon source, a carbon source and a dopant, wherein at least the silicon source and the carbon source are present in common in particles of a solid granulate;
b) treating the mixture provided in step a) at a temperature in the range >1650° C. to ≤1700° C., wherein step b) is carried out in a reactor which comprises a deposition surface the temperature of which relative to at least one further inner reactor surface is reduced by an amount in a range of ≥50° C. to ≤100° C. compared to the temperature generally set in the reactor in the aforesaid range of >1650° C. to ≤1700° C.: wherein
in the solid granulate provided in step a) carbon is present with respect to silicon in an amount greater than an equimolar amount such that a carbon-containing protective layer is formed on the silicon carbide.
2. The method according to claim 1 , characterized in that the solid granulate provided in step a) is prepared by use of a sol-gel process.
3. The method according to claim 2 , characterized in that the sol-gel process at least comprises the following steps:
c) providing a precursor mixture including a silicon source, a carbon source and optionally a dopant, wherein the precursor mixture is present in a solvent; and
d) treating the precursor mixture at an elevated temperature while drying the precursor mixture.
4. The method according to claim 3 , characterized in that the sol-gel process comprises the following further step:
e) heating the dried precursor mixture to a temperature in a range of ≥800° C. to ≤1200° C.
5. The method of claim 3 , characterized in that the sol-gel process comprises the following further step:
e) heating the dried precursor mixture to a temperature in a range of ≥900° C. to ≤1100° C.