Semiconductor package and method for manufacturing the same
A semiconductor package includes a first die having a first surface, a first conductive bump over the first surface and having first height and a first width, a second conductive bump over the first surface and having a second height and a second width. The first width is greater than the second width and the first height is substantially identical to the second height. A method for manufacturing the semiconductor package is also provided.
1. A method for manufacturing a semiconductor package, comprising:
receiving a first wafer having a first conductive pad and a second conductive pad;
forming a first conductive bump on the first conductive pad and a second conductive bump on the second conductive pad, wherein a width of the first conductive bump is greater than a width of the second conductive bump, and a height of the first conductive bump is substantially identical to the second conductive bump;
bonding the first conductive bump to a second die; and
forming a first solder bump on the first conductive bump and a second solder bump on the second conductive bump.
2. The method of claim 1 , wherein the first conductive pad and the second conductive pad of the first wafer are partially covered by a first polymeric material.
3. The method of claim 2 , further comprising forming a second polymeric material on the first conductive pad and the second conductive pad prior to forming the first conductive bump and the second conductive bump.
4. The method of claim 1 , wherein the first conductive bump and the second conductive bump are electroplated under a first lithography operation.
5. The method of claim 1 , wherein the first solder bump and the second solder bump are electroplated under a first lithography operation.
6. The method of claim 5 , further comprising:
reflowing the first solder bump and the second solder bump;
dropping a solder ball on a third pad of the first die; and
reflowing the solder ball to form a conductive terminal.
7. The method of claim 5 , further comprising:
reflowing the first solder bump and the second solder bump;
printing a solder paste on a third pad of the first die under a second lithography operation; and
reflowing the solder paste to form a conductive terminal.
8. The method of claim 1 , further comprising
sawing the first wafer into a plurality of first dies; and
flip chip bonding one of the plurality of first dies to the second die through the first conductive bump.
9. The method of claim 1 , wherein the first conductive bump and the second conductive bump are electroplated under a first lithography operation and a second lithography operation, respectively.