High performance circuit applications using stacked 3D metal lines
Transistor/semiconductor devices and methods of forming transistor/semiconductor devices. The devices include a metal layer with dielectric isolation within existing 3D silicon stacks. Two different disposable materials within the 3D silicon stack are selectively removed later from other layers in the stack to become future metal layers and oxide layer respectively, to provide the metal line isolated in a vertical central portion of the stack.
1. A method of fabricating a semiconductor device, the method comprising:
forming a nano-sheet stack on a substrate, the nano-sheet stack being a stack of multiple layers of four or more different materials, the nano-sheet stack having an elongated geometry along a first direction perpendicular to a vertical direction, nano-sheets within the nano-sheet stack formed by epitaxial growth, a vertically central portion of the nano-sheet stack having a first layer of a first material in contact with second layers of a second material positioned above and below the first layer in the vertical direction, a lower portion of the nano-sheet stack and an upper portion of the nano-sheet stack in the vertical direction both having alternating layers of a third material and a fourth material, each of the four or more different materials having a different etch resistivity relative to each other;
along the first direction, masking a first portion of the nano-sheet stack while a second portion of the nano-sheet stack is uncovered;
replacing uncovered portions of the first material with a conductor;
replacing uncovered portions of the second material with a dielectric;
along the first direction, masking the second portion of the nano-sheet stack while the first portion of the nano-sheet stack is uncovered;
replacing uncovered portions of the first material with the conductor; and
replacing uncovered portions of the second material with the dielectric.
2. The method of fabricating a semiconductor device, according to claim 1 , wherein
the first material and the second material are Si x Ge y , with x being between 0.10 and 0.25 and y being between 0.75 and 0.90.
3. The method of fabricating a semiconductor device, according to claim 1 , wherein
the first material and the second material are pure germanium, Ge x Sn y , or Si x C y .
4. The method of fabricating a semiconductor device, according to claim 1 , wherein
the conductor is ruthenium (Ru).
5. The method of fabricating a semiconductor device, according to claim 1 , wherein
the dielectric is oxide.
6. The method of fabricating a semiconductor device, according to claim 1 , wherein
the third material is silicon and the fourth material is SiGe 2 .
7. The method of fabricating a semiconductor device, according to claim 1 , further comprising:
forming an oxide on the substrate below the nano-sheet stack and forming a nitride cap on the top of the nano-sheet stack, in the vertical direction.
8. A method of fabricating a semiconductor device, the method comprising:
forming a nano-sheet stack on a substrate, the nano-sheet stack being a stack of multiple layers of four or more different materials, the nano-sheet stack having an elongated geometry along a first direction perpendicular to a vertical direction, nano-sheets within the nano-sheet stack formed by epitaxial growth, a vertically central portion of the nano-sheet stack having a first layer of a first material in contact with second layers of a second material positioned above and below the first layer in the vertical direction, a lower portion of the nano-sheet stack and an upper portion of the nano-sheet stack in the vertical direction both having alternating layers of a third material and a fourth material, each of the four or more different materials having a different etch resistivity relative to each other;
along the first direction, masking a first portion of the nano-sheet stack while a second portion of the nano-sheet stack is uncovered;
partially etching uncovered portions of the first material;
replacing the partially etched uncovered portions of the first material with a conductor;
partially etching uncovered portions of the second material;
replacing the partially etched uncovered portions of the second material with a dielectric;
along the first direction, masking the second portion of the nano-sheet stack while the first portion of the nano-sheet stack is uncovered;
partially etching uncovered portions of the first material;
replacing the partially etched uncovered portions of the first material with the conductor;
partially etching uncovered portions of the second material;
replacing the partially etched uncovered portions of the second material with the dielectric.
9. The method of fabricating a semiconductor device, according to claim 8 , wherein
the first material and the second material are Si x Ge y , with x being between 0.10 and 0.25 and y being between 0.75 and 0.90.
10. The method of fabricating a semiconductor device, according to claim 8 , wherein
the first material and the second material are pure germanium, Ge x Sn y , or Si x C y .
11. The method of fabricating a semiconductor device, according to claim 8 , wherein
the conductor is ruthenium (Ru).
12. The method of fabricating a semiconductor device, according to claim 8 , wherein
the dielectric is oxide.
13. The method of fabricating a semiconductor device, according to claim 8 , wherein
the third material is silicon and the fourth material is SiGe 2 .
14. A semiconductor device comprising:
a substrate;
an oxide layer deposited on the substrate;
a nano-sheet stack formed on top of the oxide layer; and
a nitride cap formed on top of the nano-sheet stack, wherein the nano-sheet stack is a stack of multiple layers of four or more different materials, the nano-sheet stack having an elongated geometry along a length direction perpendicular to a vertical direction and a shortened geometry along a width direction perpendicular to each of the vertical direction and the length direction,
a vertically central portion of the nano-sheet stack has a first layer of a conductor material in contact with second layers of a dielectric material positioned above and below the first layer of conductor material in the vertical direction, and
a lower portion of the nano-sheet stack and an upper portion of the nano-sheet stack in the vertical direction both have alternating layers of a third material and a fourth material, and the first layer of conductor material extends along the nanosheet stack along the entire width direction.
15. The semiconductor device, according to claim 14 , wherein the nano-sheet stack is formed by epitaxial growth.
16. The semiconductor device, according to claim 14 , wherein the third material is silicon and the fourth material is SiGe 2 .
17. The semiconductor device, according to claim 14 , wherein the conductor is ruthenium (Ru).
18. The semiconductor device, according to claim 14 , wherein the dielectric is oxide.