Abatement and strip process chamber in a dual loadlock configuration
Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.
1. A method for removing halogen-containing residues from a substrate, comprising:
transferring a substrate to a substrate processing system through a first chamber volume of a load lock chamber coupled to the substrate processing system, wherein the load lock chamber, comprises:
a chamber body defining the first chamber volume and a second chamber volume isolated from one another, wherein the first chamber volume is selectively connectable to two processing environments through two openings configured for substrate transferring, and the second chamber volume is selectively connected to at least one of the two processing environments;
a heated substrate support assembly disposed in the second chamber volume, wherein the heated substrate support assembly is configured to support and heat a substrate thereon; and
a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume;
etching the substrate in the substrate processing chamber with chemistry comprising halogen;
pumping down the second chamber volume through a central opening in a bottom wall of a second chamber body defining the second chamber volume, the central opening fluidly connecting with a recess in a top wall of a first chamber body defining the first chamber volume and a vacuum port in the first chamber body; and
removing halogen-containing residues from the etched substrate in the second chamber volume of the load lock chamber, wherein removing halogen-containing residues comprises:
heating the etched substrate on a heated substrate support assembly disposed in the second chamber volume; and
flowing a processing gas to the second chamber volume.
2. The method of claim 1 , the load lock chamber further comprises a thermal insulator disposed within the second chamber volume between the heated substrate support assembly and the chamber body, wherein the heated substrate support assembly does not directly contact the chamber body.
3. The method of claim 1 , wherein the first chamber body and the second chamber body are stacked to form the chamber body.
4. The method of claim 3 , further comprising pumping the first chamber volume through a lower vacuum port formed through the chamber bottom of the first chamber body.
5. The method of claim 1 , further comprising receiving and supporting the substrate by three or more lifting fingers of a lift hoop assembly disposed in the second chamber volume, wherein the lift hoop assembly comprises a hoop body attached to a lift, and the hoop body surrounds the heated substrate support assembly.
6. A method for removing halogen-containing residues from a substrate, comprising:
transferring a substrate to a substrate processing system through a first chamber volume of a load lock chamber coupled to the substrate processing system, wherein the load lock chamber, comprises:
a chamber body defining the first chamber volume and a second chamber volume isolated from one another, wherein the first chamber volume is selectively connectable to two processing environments through two openings configured for substrate transferring, and the second chamber volume is selectively connected to at least one of the two processing environments;
a showerhead disposed in the second chamber volume;
a heated substrate support assembly disposed in the second chamber volume, wherein the heated substrate support assembly is configured to support and heat a substrate thereon;
a lift hoop assembly disposed in the second chamber volume surrounding the heated substrate support assembly and configured to lift the substrate, the lift hoop assembly comprising a ring-shaped hoop body, a hoop liner disposed on the hoop body, and extending vertically upwards from the hoop body defining a processing region therein, the hoop liner surrounds both the heated substrate support and at least a portion of the showerhead; and
a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume;
etching the substrate in the substrate processing chamber with chemistry comprising halogen;
pumping down the second chamber volume through a central opening in a bottom wall of a second chamber body defining the second chamber volume, the central opening fluidly connecting with a recess in a top wall of a first chamber body defining the first chamber volume and a vacuum port in the first chamber body; and
removing halogen-containing residues from the etched substrate in the second chamber volume of the load lock chamber, wherein removing halogen-containing residues comprises:
heating the etched substrate on a heated substrate support assembly disposed in the second chamber volume; and
flowing a processing gas through the showerhead to the second chamber volume.
7. The method of claim 6 , the load lock chamber further comprises a thermal insulator disposed within the second chamber volume between the heated substrate support assembly and the chamber body, wherein the heated substrate support assembly does not directly contact the chamber body.
8. The method of claim 6 , wherein the first chamber body and the second chamber body are stacked to form the chamber body.
9. The method of claim 8 , further comprising pumping the first chamber volume through a lower vacuum port formed through the chamber bottom of the first chamber body.
10. The method of claim 6 , further comprising receiving and supporting the substrate by three or more lifting fingers of the lift hoop assembly disposed in the second chamber volume, wherein the lift hoop assembly comprises the hoop body attached to a lift.
11. A method for removing halogen-containing residues from a substrate, comprising:
transferring a substrate to a substrate processing system through a first chamber volume of a load lock chamber coupled to the substrate processing system, wherein the load lock chamber, comprises:
a chamber body defining the first chamber volume and a second chamber volume isolated from one another, wherein the first chamber volume is selectively connectable to two processing environments through two openings configured for substrate transferring, and the second chamber volume is selectively connected to at least one of the two processing environments;
a showerhead disposed in the second chamber volume;
a heated substrate support assembly disposed in the second chamber volume, wherein the heated substrate support assembly is configured to support and heat a substrate thereon; and
a lift hoop assembly disposed in the second chamber volume configured to lift the substrate, the lift hoop assembly comprising a ring-shaped hoop body, a hoop liner disposed on the hoop body and extending vertically upwards from the hoop body, the hoop liner surrounds both the heated substrate support and at least a portion of the showerhead;
etching the substrate in the substrate processing chamber with chemistry comprising halogen;
pumping down the second chamber volume through a central opening in a bottom wall of a second chamber body defining the second chamber volume, the central opening fluidly connecting with a recess in a top wall of the first chamber body defining the first chamber volume and a vacuum port in the first chamber body; and
removing halogen-containing residues from the etched substrate in the second chamber volume of the load lock chamber, wherein removing halogen-containing residues comprises:
heating the etched substrate on a heated substrate support assembly disposed in the second chamber volume; and
flowing a processing gas through the showerhead to the second chamber volume.
12. The method of claim 11 , the load lock chamber further comprises a thermal insulator disposed within the second chamber volume between the heated substrate support assembly and the chamber body, wherein the heated substrate support assembly does not directly contact the chamber body.
13. The method of claim 11 , wherein the first chamber body and the second chamber body are stacked to form the chamber body.
14. The method of claim 13 , further comprising pumping the first chamber volume through a lower vacuum port formed through the chamber bottom of the first chamber body.
15. The method of claim 11 , further comprising receiving and supporting the substrate by three or more lifting fingers of the lift hoop assembly disposed in the second chamber volume, wherein the lift hoop assembly comprises the hoop body attached to a lift.
16. The method of claim 11 , wherein a remote plasma source is connected to the second chamber volume for supplying a plasma to the second chamber volume.
17. The method of claim 11 , wherein the showerhead is disposed within the second chamber volume.