Embedded small via anti-fuse device

1. An anti-fuse device comprising:

an anti-fuse material layer located on a surface of a first electrode, wherein the first electrode is composed of a first electrically conductive metal or a first electrically conductive metal alloy;

a first interconnect dielectric material layer located on the anti-fuse material layer, wherein the first interconnect dielectric material layer includes at least one set of via contact structures present therein, wherein the at least one set of via contact structures includes a first via contact structure having a first critical dimension, and a pair of second via contact structures having a second critical dimension that is greater than the first critical dimension, wherein each via contact structure includes at least a metallization liner and wherein one of the second via contact structures of the pair of second via contact structures is located laterally adjacent to a first side of the first via contact structure, and another of the second via contact structures of the pair of second via contact structures is located laterally adjacent to a second side of the first via contact structure; and

a second interconnect dielectric material layer located on the first interconnect dielectric material layer, wherein a second electrode composed of a second electrically conductive metal or a second electrically conductive metal alloy is present in the second interconnect dielectric material layer and contacts at least the first via contact structure that is present in the first interconnect dielectric material layer, wherein the second electrode is entirely spaced apart from the anti-fuse material layer by the first interconnect dielectric material layer and at least the first via contact structure.

2. The anti-fuse device of claim 1 , wherein the anti-fuse dielectric material layer that is located directly beneath the first via contact structure undergoes dielectric breakdown prior to the anti-fuse dielectric material layer that is located directly beneath the second via contact structures due to the higher electrical field that is provided by the first via contact structure.

3. The anti-fuse device of claim 2 , wherein each of the via contact structures further comprises a via interconnect structure located on the metallization liner.

4. The anti-fuse device of claim 2 , wherein each of the via contact structures of the pair of second via contact structures further comprises a via interconnect structure located on the metallization liner, and wherein the first via contact structure consists of the metallization liner.

5. The anti-fuse device of claim 1 , wherein the second electrode contacts only the first via contact structure.

6. The anti-fuse device of claim 1 , wherein the second electrode further contacts the pair of second via contact structures.

7. The anti-fuse device of claim 1 , wherein an angle between a sidewall of the pair of second via contact structures and a topmost surface of the anti-fuse material layer is from 80°-90°, and an angle between a sidewall of the first via contact structure and a topmost surface of the anti-fuse material layer is from 80°-90°.

8. The anti-fuse device of claim 1 , wherein the first critical dimension is less than 10 nm, and the second critical dimension is greater than 30 nm.

9. The anti-fuse device of claim 1 , further comprising a diffusion barrier liner located on sidewalls and a bottom wall of the second electrode.

10. The anti-fuse device of claim 1 , further comprising a dielectric capping layer located between the first interconnect dielectric material layer and the second interconnect dielectric material layer, wherein a lower portion of the second electrode is present in the dielectric capping layer.

11. The anti-fuse device of claim 10 , further comprising a diffusion barrier liner located on sidewalls and a bottom wall of the second electrode.

12. A method of forming an anti-fuse device, the method comprising:

forming an anti-fuse material layer on a first electrode, wherein the first electrode is composed of a first electrically conductive metal or a first electrically conductive metal alloy;

forming a first interconnect dielectric material layer on the anti-fuse material layer, wherein the first interconnect dielectric material layer includes at least one set of vias present therein, wherein the at least one set of vias includes a first via having a first critical dimension, and a pair of second vias having a second critical dimension that is greater than the first critical dimension, wherein one of the second vias of the pair of second vias is located laterally adjacent to a first side of the first via, and another of the second vias of the pair of second vias is located laterally adjacent to a second side of the first via;

forming a via contact structure in each of the first via and the pair of second vias of the at least one set of vias, wherein the forming of the via contact structure comprises at least forming a metallization liner into the first via and the pair of second vias; and

forming a second interconnect dielectric material layer on the first interconnect dielectric material layer, wherein a second electrode is composed of a second electrically conductive metal or a second electrically conductive metal alloy and is present in the second interconnect dielectric material layer that contacts at least the via contact structure that is present in the first via of the at least one set of vias, and wherein the second electrode is entirely spaced apart from the anti-fuse material layer by the first interconnect dielectric material layer and the via contact structure.

13. The method of claim 12 , further comprising applying a voltage to the device, wherein during the applying of the voltage the anti-fuse dielectric material layer that is located directly beneath the first via contact structure undergoes dielectric breakdown prior to the anti-fuse dielectric material layer that is located directly beneath the second via contact structures due to the higher electrical field that is provided by the first via contact structure.

14. The method of claim 12 , wherein the forming of each of the via contact structures further comprises forming a via interconnect structure on the metallization liner.

15. The method of claim 12 , wherein the forming of via contact structures in the pair of second vias further comprises forming a via interconnect structure on the metallization liner that is present in the pair of second vias, and wherein the forming of the via contact structure in the first via only includes forming the metallization liner in the first via.

16. The method of claim 12 , wherein the second electrode contacts only the via contact structure present in the first via.

17. The method of claim 12 , wherein the second electrode further contacts the via contact structure present in the pair of second vias.

18. The method of claim 12 , wherein an angle between a sidewall of the pair of second vias and a topmost surface of the anti-fuse material layer is from 80°-90°, and an angle between a sidewall of the first via and a topmost surface of the anti-fuse material layer is from 80°-90°.

19. The method of claim 12 , further comprising a diffusion barrier liner located on sidewalls and a bottom wall of the second electrode.