Array substrate, display device, thin film transistor, and method for manufacturing array substrate

1. An array substrate, comprising: a base substrate, an active layer, and a cover layer,

wherein the active layer is on the base substrate, the cover layer is on a side, away from the base substrate, of the active layer and covers the array substrate,

the cover layer comprises a metal conductive portion and a transparent insulating metal oxide portion, the metal conductive portion and the transparent insulating metal oxide portion comprise an identical metal element,

the metal conductive portion is electrically connected to the active layer,

the metal conductive portion comprises a first electrode and a second electrode,

the first electrode and the second electrode are opposite and are electrically connected to the active layer,

a surface of a side, away from the base substrate, of the first electrode, does not include a portion covered by the transparent insulating metal oxide portion, and

a surface of a side, away from the base substrate, of the second electrode, does not include a portion covered by the transparent insulating metal oxide portion.

2. The array substrate according to claim 1 , wherein the metal conductive portion further comprises a data line,

the first electrode is a source electrode, the second electrode is a drain electrode, and the data line is electrically connected to the source electrode.

3. The array substrate according to claim 1 , further comprising a gate electrode, a gate line, and a gate insulating layer,

wherein the gate electrode is on the base substrate and is electrically connected to the gate line,

the gate insulating layer is on a side, away from the base substrate, of the gate electrode and the gate line, and

the active layer is on a side, away from the gate electrode, of the gate insulating layer.

4. The array substrate according to claim 1 , wherein the metal conductive portion of the cover layer comprises Hf, and the transparent insulating metal oxide portion of the cover layer comprises HfO 2 .

5. The array substrate according to claim 1 , wherein the metal conductive portion of the cover layer comprises Ta, and the transparent insulating metal oxide portion of the cover layer comprises Ta 2 O 5 .

6. The array substrate according to claim 1 , wherein a material of the active layer comprises a metal oxide semiconductor, and

the metal oxide semiconductor comprises indium gallium zinc oxide, zinc oxide, or zinc oxynitride.

7. The array substrate according to claim 1 , further comprising a passivation layer, wherein the passivation layer is on a side, away from the active layer, of the cover layer.

8. A display device, comprising the array substrate according to claim 1 .

9. A method for manufacturing an array substrate, comprising:

forming an active layer on a base substrate; and

forming a cover layer covering the array substrate on a side, away from the base substrate, of the active layer,

wherein the cover layer comprises a metal conductive portion and a transparent insulating metal oxide portion, the metal conductive portion and the transparent insulating metal oxide portion comprise an identical metal element, and the metal conductive portion is electrically connected to the active layer, and

the metal conductive portion comprises a first electrode and a second electrode, the first electrode and the second electrode are opposite and are electrically connected to the active layer, respectively, and

the forming the cover layer covering the array substrate on the side, away from the base substrate, of the active layer, comprises:

forming a metal layer covering the array substrate on the side, away from the base substrate, of the active layer;

forming a shielding layer corresponding to a region of the first electrode and a region of the second electrode on a side, away from the active layer, of the metal layer;

processing the array substrate to allow a region, which is not covered by the shielding layer, of the metal layer to be converted into a transparent insulating metal oxide; and

stripping off the shielding layer.

10. The method for manufacturing the array substrate according to claim 9 , wherein the metal conductive portion further comprises a data line,

the first electrode is a source electrode, the second electrode is a drain electrode, the data line is electrically connected to the source electrode, and

the forming the cover layer covering the array substrate on the side, away from the base substrate, of the active layer further comprises:

forming a shielding layer corresponding to a region of the data line on the side, away from the active layer, of the metal layer.

11. The method for manufacturing the array substrate according to claim 9 , wherein the processing the array substrate to allow the region, which is not covered by the shielding layer, of the metal layer to be converted into the transparent insulating metal oxide, comprises:

performing an oxygen plasma bombardment on the array substrate to allow the region, which is not covered by the shielding layer, of the metal layer to be converted into the transparent insulating metal oxide.

12. The method for manufacturing the array substrate according to claim 9 , wherein the shielding layer is a photoresist layer.

13. The method for manufacturing the array substrate according to claim 9 , wherein a material of the metal layer comprises Hf, and the transparent insulating metal oxide comprises HfO 2 ; or

a material of the metal layer comprises Ta, and the transparent insulating metal oxide comprises Ta 2 O 5 .

14. A method for manufacturing an array substrate, comprising:

forming an active layer on a base substrate; and

forming a cover layer covering the array substrate on a side, away from the base substrate, of the active layer,

wherein the cover layer comprises a metal conductive portion and a transparent insulating metal oxide portion, the metal conductive portion and the transparent insulating metal oxide portion comprise an identical metal element, and the metal conductive portion is electrically connected to the active layer, and

the metal conductive portion and the transparent insulating metal oxide portion are formed through processing an identical metal layer.

15. The method for manufacturing the array substrate according to claim 14 , wherein a material of the active layer comprises a metal oxide semiconductor, and

the metal oxide semiconductor comprises indium gallium zinc oxide, zinc oxide, or zinc oxynitride.

16. The method for manufacturing the array substrate according to claim 14 , further comprising:

forming a gate electrode and a gate line electrically connected to the gate electrode on the base substrate, and

forming a gate insulating layer on a side, away from the base substrate, of the gate electrode and the gate line,

wherein the active layer is formed on a side, away from the gate electrode, of the gate insulating layer.

17. The method for manufacturing the array substrate according to claim 14 , further comprising:

forming a passivation layer on a side, away from the active layer, of the cover layer.

18. The method for manufacturing the array substrate according to claim 14 , wherein a material of the identical metal layer comprises Hf, and the transparent insulating metal oxide portion comprises HfO 2 ; or

a material of the identical metal layer comprises Ta, and the transparent insulating metal oxide portion comprises Ta 2 O 5 .