RRAM device with spacer for electrode isolation
Embodiments of the present invention are directed to forming a Resistive Random Access Memory (RRAM) device with a spacer for electrode isolation. In a non-limiting embodiment of the invention, a memory stack including a top electrode, a bottom electrode, and a dielectric layer between the top electrode and the bottom electrode is formed. A portion of the memory stack is removed to expose a sidewall of the top electrode and a spacer is formed on the sidewall of the top electrode. The spacer is positioned to encapsulate the top electrode, physically preventing a short between the top electrode and the bottom electrode.
1. A method for forming a semiconductor device, the method comprising:
forming a metal interconnect layer on a substrate;
forming a memory stack on the metal interconnect layer, the memory stack comprising a top electrode, a bottom electrode, and a dielectric layer between the top electrode and the bottom electrode, wherein a bottommost surface of the bottom electrode is in direct contact with the metal interconnect layer;
forming a first hard mask on the top electrode, the first hard mask comprising a metal nitride;
forming a second hard mask on the first hard mask, the second hard mask comprising a silicon nitride;
patterning the second hard mask, wherein a thickness of the second hard mask and a corresponding hard mask open thermal budget is defined such that the second hard mask is patterned without recessing the first hard mask;
transferring a pattern in the second hard mask to the first hard mask and the top electrode, wherein transferring the pattern to the first hard mask results in partially recessing the second hard mask, wherein an oxide break-through occurs prior to transferring the pattern to the first hard mask;
exposing a sidewall of the top electrode;
forming an encapsulation layer on the exposed sidewall of the top electrode and on a topmost surface of the dielectric layer;
removing a portion of the encapsulation layer to expose the topmost surface of the dielectric layer, wherein remaining portions of the encapsulation layer define a spacer on the sidewall of the top electrode, and wherein a bottommost surface of the spacer is directly on the topmost surface of the dielectric layer.
2. The method of claim 1 further comprising removing a portion of the dielectric layer and the bottom electrode such that a sidewall of the dielectric layer, a sidewall of the bottom electrode, and a sidewall of the spacer are coplanar.
3. The method of claim 1 , wherein the spacer prevents a short between the top electrode and the bottom electrode.
4. The method of claim 1 , wherein the metal interconnect layer is formed in an inter-level dielectric over the substrate.
5. The method of claim 1 , wherein exposing the sidewall of the top electrode comprises removing a portion of the memory stack, which further exposes a surface of the dielectric layer.
6. A method for forming a semiconductor device, the method comprising:
forming a metal interconnect layer on a substrate;
forming a memory stack on the metal interconnect layer, the memory stack comprising a top electrode, a bottom electrode, and a dielectric layer between the top electrode and the bottom electrode, wherein a bottommost surface of the bottom electrode is in direct contact with the metal interconnect layer;
forming a first hard mask on the top electrode, the first hard mask comprising a metal nitride;
forming a second hard mask on the first hard mask, the second hard mask comprising a silicon nitride;
patterning the second hard mask, wherein a thickness of the second hard mask and a corresponding hard mask open thermal budget is defined such that the second hard mask is patterned without recessing the first hard mask;
transferring a pattern in the second hard mask to the first hard mask, the top electrode, and the dielectric layer to expose a sidewall of the top electrode and a sidewall of the dielectric layer, wherein transferring the pattern to the first hard mask results in partially recessing the second hard mask, wherein an oxide break-through occurs prior to transferring the pattern to the first hard mask;
forming an encapsulation layer on sidewalls of the first hard mask, the exposed sidewall of the top electrode, and on the exposed sidewall of the dielectric layer, the encapsulation layer directly on a topmost surface of the bottom electrode;
removing a portion of the encapsulation layer to expose the topmost surface of the bottom electrode, wherein remaining portions of the encapsulation layer define a spacer on the sidewalls of the first hard mask, the sidewalls of the top electrode and the sidewalls of the dielectric layer, and wherein a bottommost surface of the spacer is directly on the topmost surface of the bottom electrode.
7. The method of claim 6 further comprising removing a portion of the bottom electrode such that a sidewall of the bottom electrode and a sidewall of the spacer are coplanar.
8. The method of claim 6 , wherein the spacer prevents a short between the top electrode and the bottom electrode.
9. The method of claim 6 , wherein the metal interconnect layer is formed in an inter-level dielectric over the substrate.
10. The method of claim 6 , wherein exposing the sidewall of the top electrode and the sidewall of the dielectric layer comprises removing a portion of the memory stack, which further exposes a surface of the bottom electrode.