IP Library › Granted Patent US 11,181,509
Granted Patent B2
US 11,181,509 · App. 16/978,775 · Granted Nov 23, 2021

Sensing sensor

Inventors: Hiroyuki Kukita (Saitama, JP); Tsuyoshi Shiobara (Saitama, JP)
Assignee: NIHON DEMPA KOGYO CO., LTD.
G01N29/326G01N29/036G01N29/323G01N2033/0095
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Quick Facts
Patent No.
US 11,181,509
App. No.
16/978,775
Granted
Nov 23, 2021
Kind
B2
Abstract

To provide a technique for expanding a measurement dynamic range and performing a stable detection in a sensing sensor using a crystal resonator. A spacer is disposed between an oscillator circuit that oscillates a crystal resonator and a base body that cools an oscillator circuit to a cryogenic temperature, and an oscillator circuit board includes a heater resistor that heats the oscillator circuit. Therefore, the temperature of the oscillator circuit that does not fall below a functional limit temperature and is a low temperature as much as possible can be provided. A negative resistance of the oscillator circuit can be increased, the measurement dynamic range can be expanded, and the crystal resonator can be stably oscillated.

Claims (17)

1. A sensing sensor that attaches a substance to be sensed to a piezoelectric resonator, detaches the substance to be sensed by changing a temperature of the piezoelectric resonator, and senses the substance to be sensed based on a relationship between a change of an oscillation frequency and the temperature of the piezoelectric resonator, the substance to be sensed being a gas, the sensing sensor comprising:

a base body, cooled by a liquid nitrogen;

the piezoelectric resonator, cooled by the base body;

a heating unit that heats the piezoelectric resonator for changing the temperature of the piezoelectric resonator;

a substrate mounted to the base body, the substrate including an oscillator circuit unit and a heater circuit thereon, the oscillator circuit unit oscillating the piezoelectric resonator, the heater circuit heating the oscillator circuit unit; and

a heat insulating portion, disposed between the base body and the oscillator circuit unit for avoiding a heat transfer of a cool heat from the base body to the oscillator circuit unit via the substrate.

2. The sensing sensor according to claim 1 , wherein

the oscillator circuit unit includes a semiconductor element containing a silicon, and

the oscillator circuit unit has a temperature controlled to from −170° C. to −110° C.

3. The sensing sensor according to claim 1 , wherein

the heat insulating portion is a spacer with a heat insulating property disposed between the substrate and the base body.

4. The sensing sensor according to claim 1 , wherein

in the substrate, a region on which the oscillator circuit unit is disposed is separated from the base body, and a region outside with respect to the region contacts the base body, and

the heat insulating portion is a through-hole portion formed in the substrate.

5. The sensing sensor according to claim 1 , wherein

the piezoelectric resonator is supported by a supporting member at a position on an opposite side of the base body with respect to the oscillator circuit unit, and

the supporting member and the base body are mutually connected by a heat transfer member that transfers a heat of the piezoelectric resonator to the base body.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2020
From: KUKITA, HIROYUKI; SHIOBARA, TSUYOSHI
To: NIHON DEMPA KOGYO CO., LTD.
Reel/Frame 053740/0646 →
Priority Claims (1)
JP JP2018-043359 · Mar 9, 2018 · national
Continuity (1)
Related Publication 20200408724A1 · Dec 31, 2020