Thin film transistor, gate driver circuit and display apparatus

1. A thin, film, transistor, comprising:

a substrate;

a source electrode on the substrate, the source electrode comprising a first teeth portion, the first teeth portion comprising a plurality of teeth arranged at intervals in a first direction;

a drain electrode on the substrate, the drain electrode comprising a second teeth portion, the second teeth portion comprising a plurality of teeth arranged at intervals in the first direction;

a gate on the substrate, the gate comprising a third teeth portion, the third teeth portion comprising a plurality of teeth arranged at intervals in the first direction; and

an active layer on the substrate, the active layer comprising a plurality of channel regions arranged at intervals in the first direction; each of the plurality of channel regions has a length in the first direction and a width in a second direction, the second direction being perpendicular to the first direction;

wherein the first teeth portion, the second teeth portion, the third teeth portion, and the active layer form a plurality of sub-thin film transistors connected in parallel, the plurality of sub-thin film transistors comprising at least a center sub-thin film transistor at a center position of the plurality of sub-thin film transistors in the first direction, and

the center sub-thin film transistor has a channel region having a smallest width-to-length ratio among the plurality of sub-thin film transistors.

2. The thin film transistor according to claim 1 , wherein a length of the channel region of the center sub-thin film transistor is longest among those of the plurality of sub-thin film transistors, and widths of the channel regions of the plurality of sub-thin film transistors are the same.

3. The thin film transistor according to claim 2 , wherein lengths of channel regions of the plurality of sub-thin film transistors except the center sub-thin film transistor are the same.

4. The thin film transistor according to claim 2 , wherein a length of a channel region of a sub-thin film transistor among the plurality of sub-thin film transistors decreases as a distance of the respective sub-thin film transistor from the center sub-thin film transistor increases.

5. The thin film transistor according from claim 1 , wherein the active layer is divided into a plurality of separated segments in the second direction.

6. The thin film transistor according to claim 5 , wherein the plurality of the separated segments of the active layer has a same width in the second direction.

7. The thin film transistor according to claim 5 , wherein the plurality of the separated segments of the active layer has different widths in the second direction.

8. The thin film transistor according to claim 7 , wherein a width in the second direction of at least one center segment among the plurality of separated segments is smaller than a width in the second direction of each of the other segments of the plurality of separated segments.

9. The thin film transistor according to claim 1 , wherein a width of the channel region of the center sub-thin film transistor is shortest among those of the plurality of sub-thin film transistors, and lengths of the channel regions of the plurality of sub-thin film transistors are the same.

10. The thin film transistor according to claim 9 , wherein widths of the channel regions of the other sub-thin film transistors except the center sub-thin film transistor are the same.

11. The thin film transistor according to claim 9 , wherein a width of a channel region of a sub-thin film transistor among the plurality of sub-thin film transistors increases as a distance of the respective sub-thin film transistor from the center sub-thin film transistor increases.

12. The thin film transistor according to claim 9 , wherein the active layer is divided into a plurality of separated segments in the second direction.

13. The thin film transistor according to claim 12 , wherein the plurality of the separated segments of the active layer has a same width in the second direction.

14. The thin film transistor according to claim 12 , wherein a width in the second direction of at least one center segment among the plurality of separated segments is smaller than a width in the second direction of each of the other segments of the plurality of separated segments.

15. The thin film transistor according to claim 1 , wherein a length of the channel region of the center sub-thin film transistor is longest among those of the plurality of sub-thin film transistors, and a width of the channel region of the center sub-thin film transistor is shortest among those of the plurality of sub-thin film transistors.

16. The thin film transistor according to claim 15 , wherein a length of a channel region of a sub-thin film transistor among the plurality of sub-thin film transistors decreases as a distance of the respective sub-thin film transistor from the center sub-thin film transistor increases.

17. The thin-film transistor according to claim 15 , wherein a width of a channel region of a sub-thin film transistor among the plurality of sub-thin film transistors increases as a distance of the respective sub-thin film transistor from the center sub-thin film transistor increases.

18. A gate driver circuit comprising the thin-film transistor according to claim 1 .

19. An array substrate comprising the gate driver circuit according to claim 18 .

20. A display apparatus comprising the array substrate according to claim 19 .