Display device
A display device includes a substrate including a first recess portion, a semiconductor layer that overlaps the first recess portion, the semiconductor layer including protrusions and depressions conforming to a shape of the first recess portion, and a gate electrode that overlaps the first recess portion and the semiconductor layer, the gate electrode including protrusions and depressions conforming to the shape of the first recess portion. A thickness of the substrate in the first recess portion is less than a thickness of the substrate in a non-recess portion, excluding the first recess portion.
1. A display device, comprising:
a substrate including a first recess portion;
a buffer layer on the substrate that overlaps the first recess portion, the buffer layer including protrusions and depressions conforming to a shape of the first recess portion;
a semiconductor layer on the buffer layer, the semiconductor layer overlapping the first recess portion and including protrusions and depressions conforming to the shape of the first recess portion; and
a gate electrode on the semiconductor layer to control the semiconductor layer, the gate electrode overlapping the first recess portion and the semiconductor layer, the gate electrode including protrusions and depressions conforming to the shape of the first recess portion, and the gate electrode having no electrically connected electrode under the semiconductor layer, wherein
a thickness of the substrate in the first recess portion is less than a thickness of the substrate in a non-recess portion, excluding the first recess portion.
2. The display device as claimed in claim 1 , further comprising a light emitting diode, wherein
the semiconductor layer and the gate electrode form a driving transistor that controls an amount of a current flowing to the light emitting diode.
3. The display device as claimed in claim 2 , wherein:
the semiconductor layer includes a first end and a second end that are spaced apart from each other, and a channel region that is located between the first end and the second end, and
the channel region includes protrusions and depressions having vertical portions and a horizontal portion, the vertical portions and the horizontal portion conforming to the shape of the first recess portion.
4. The display device as claimed in claim 3 , wherein a channel length of the driving transistor corresponds to a length of the vertical portions and a length of the horizontal portion of the channel region.
5. The display device as claimed in claim 2 , further comprising:
a second recess portion in the substrate;
a first electrode that overlaps the second recess portion, the first electrode including protrusions and depressions conforming to a shape of the second recess portion; and
a second electrode that overlaps the second recess portion and faces the first electrode, the second electrode including protrusions and depressions conforming to the shape of the second recess portion.
6. The display device as claimed in claim 5 , wherein the first electrode and the second electrode form a storage capacitor that maintains a gate voltage of the driving transistor.
7. The display device as claimed in claim 6 , wherein:
the first electrode and the second electrode respectively include protrusions and depressions having vertical portions and a horizontal portion conforming to the shape of the second recess portion, and
the storage capacitor has a capacitance corresponds to a length of the vertical portions and a length of the horizontal portion.
8. The display device as claimed in claim 2 , further comprising a second electrode that overlaps the first recess portion, the semiconductor layer, and the gate electrode, wherein
the gate electrode and the second electrode form a storage capacitor that maintains a gate voltage of the driving transistor.
9. The display device as claimed in claim 8 , wherein:
the gate electrode and the second electrode respectively include protrusions and depressions having vertical portions and a horizontal portion conforming to the shape of the first recess portion, and
the storage capacitor has a capacitance that corresponds to a length of the vertical portions and a length of the horizontal portion.
10. A display device, comprising:
a substrate including a recess portion;
a buffer layer on the substrate that overlaps the recess portion, the buffer layer including protrusions and depressions conforming to a shape of the recess portion;
a first electrode on the buffer layer and made of an electrically conductive metal, the first electrode overlapping the recess portion and including protrusions and depressions conforming to the shape of the recess portion;
a second electrode above the first electrode and that overlaps the recess portion and faces the first electrode, the second electrode including protrusions and depressions conforming to the shape of the recess portion; and
an insulation layer that is between the first electrode and the second electrode, wherein
a thickness of the substrate in the recess portion is less than a thickness of the substrate in a non-recess portion, excluding the recess portion.
11. The display device as claimed in claim 10 , further comprising:
a light emitting diode; and
a driving transistor that controls an amount of a current flowing to the light emitting diode, wherein
the first electrode and the second electrode form a storage capacitor that maintains a gate voltage of the driving transistor.
12. The display device as claimed in claim 11 , wherein:
the first electrode and the second electrode respectively include protrusions and depressions having vertical portions and a horizontal portion conforming to the shape of the recess portion, and
capacitance of the storage capacitor corresponds to a length of the vertical portions and a length of the horizontal portion.
13. The display device as claimed in claim 10 , further comprising:
an additional recess portion formed in the substrate; and
a semiconductor layer that overlaps the additional recess portion, the semiconductor layer including protrusions and depressions conforming to a shape of the additional recess portion; and
a gate electrode that overlaps the additional recess portion and the semiconductor layer, and forms protrusions and depressions conforming to the shape of the additional recess portion,
wherein:
the semiconductor layer includes a first end and a second end that are spaced apart from each other, and a channel region that is located between the first end and the second end, and
the semiconductor layer and the gate electrode form a driving transistor that controls an amount of a current flowing to a light emitting diode.
14. The display device as claimed in claim 13 , wherein:
the channel region includes protrusions and depressions having vertical portions and a horizontal portion conforming to the shape of the additional recess portion, and
a channel length of the driving transistor corresponds to a length of the vertical portions and a length of the horizontal portion of the channel region.
15. The display device as claimed in claim 10 , further comprising:
a driving transistor that controls an amount of a current flowing to a light emitting diode, wherein a channel region of the driving transistor is on a different layer than the first electrode.
16. A display device, comprising:
a substrate;
a first recess portion in the substrate;
a buffer layer on the substrate that overlaps the first recess portion, the buffer layer including protrusions and depressions conforming to a shape of the first recess portion;
a semiconductor layer on the buffer layer;
a light emitting diode on the buffer layer;
a driving transistor that includes a channel region overlapping the first recess portion and that controls an amount of a current flowing to the light emitting diode;
a gate electrode on the semiconductor layer to control the semiconductor layer, the gate electrode overlapping the first recess portion and the semiconductor layer, the gate electrode having no electrically connected electrode under the semiconductor layer, wherein
a thickness of the substrate in the first recess portion is less than a thickness of the substrate in a non-recess portion, excluding the first recess portion.
17. The display device as claimed in claim 16 , wherein:
the channel region of the driving transistor includes vertical portions and a horizontal portion that conform to a shape of the first recess portion, and
a channel length of the driving transistor corresponds to a length of the vertical portions and a length of the horizontal portion.
18. The display device as claimed in claim 16 , further comprising:
a second recess portion in the substrate; and
a storage capacitor that includes a first electrode and a second electrode overlapping the second recess portion, wherein the storage capacitor maintains a gate voltage of the driving transistor.
19. The display device as claimed in claim 18 , wherein:
each of the first electrode and the second electrode includes vertical portions and a horizontal portion conforming to a shape of the second recess portion, and
capacitance of the storage capacitor corresponds to a length of the vertical portions and a length of the horizontal portion.
20. The display device as claimed in claim 16 , further comprising a storage capacitor that overlaps the first recess portion and the driving transistor.
21. The display device as claimed in claim 20 , wherein a gate electrode of the driving transistor is shared as a first electrode of the storage capacitor.