Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).
1. A reflective mask blank comprising a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order; wherein,
the absorber film is made of a material containing nickel (Ni), and
the etching mask film is made of a material containing chromium (Cr).
2. The reflective mask blank according to claim 1 , wherein the etching mask film is made of a material containing chromium (Cr) and substantially containing no oxygen (O).
3. The reflective mask blank according to claim 1 , comprising a protective film between the multilayer reflective film and the absorber film, and wherein, the protective film is made of a material containing ruthenium (Ru).
4. A method of manufacturing a reflective mask, comprising:
forming a resist pattern on the etching mask film of the reflective mask blank according to claim 1 ,
forming an etching mask pattern by using the resist pattern as a mask and patterning the etching mask film by dry etching with a dry etching gas containing a chlorine-based gas and oxygen gas, and
forming an absorber pattern by using the etching mask pattern as a mask and patterning the absorber film by dry etching with a dry etching gas that contains a chlorine-based gas and substantially contains no oxygen.
5. The method of manufacturing a reflective mask according to claim 4 , wherein the etching mask pattern is stripped after having formed the absorber pattern.
6. A method of manufacturing a semiconductor device having a step for placing the reflective mask obtained according to the method of manufacturing a reflective mask according to claim 4 in an exposure apparatus having an exposure light source emitting EUV light, and transferring a transfer pattern to a resist film formed on a transferred substrate.
7. The reflective mask blank according to claim 2 , wherein a film thickness of the etching mask film is not less than 3 nm and not more than 15 nm.
8. The reflective mask blank according to claim 1 , wherein
the absorber film comprises an oxide layer of a nickel compound, the oxide layer being a surface layer of the absorber film,
a film thickness of surface layer is not less than 1 nm and not more than 5 nm.
9. The reflective mask blank according to claim 1 , wherein the absorber film is made of a material of a nickel compound comprising a nickel and at least one selected from titanium (Ti), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), tellurium (Te), palladium (Pd), tantalum (Ta) and tungsten (W).
10. The reflective mask blank according to claim 8 , wherein a content ratio of Ni of the nickel compound is not less than 50 at % and less than 100 at %.
11. The reflective mask blank according to claim 1 , wherein the absorber film has a phase shift function.
12. A reflective mask blank comprising a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order; wherein,
the absorber film is made of a material containing nickel (Ni),
the etching mask film is made of a material containing silicon (Si).
13. The reflective mask blank according to claim 12 , wherein
a film thickness of the etching mask film is not less than 3 nm and not more than 20 nm.
14. The reflective mask blank according to claim 12 , wherein
the absorber film comprises an oxide layer of a nickel compound, the oxide layer being a surface layer of the absorber film,
a film thickness of surface layer is not less than 1 nm and not more than 5 nm.
15. The reflective mask blank according to claim 12 , wherein the absorber film is made of a material of a nickel compound comprising a nickel and at least one selected from titanium (Ti), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), tellurium (Te), palladium (Pd), tantalum (Ta) and tungsten (W).
16. The reflective mask blank according to claim 14 , wherein a content ratio of Ni of the nickel compound is not less than 50 at % and less than 100 at %.
17. The reflective mask blank according to claim 12 , wherein the absorber film has a phase shift function.
18. The reflective mask blank according to claim 12 , comprising a protective film between the multilayer reflective film and the absorber film, and wherein,
the protective film is made of a material containing ruthenium (Ru).
19. A method of manufacturing a reflective mask, comprising:
forming a resist pattern on the etching mask film of the reflective mask blank according to claim 12 ,
forming an etching mask pattern by using the resist pattern as a mask and patterning the etching mask film by dry etching with a dry etching gas containing a fluorine-containing gas, and
forming an absorber pattern by using the etching mask pattern as a mask and patterning the absorber film by dry etching with a dry etching gas that contains a chlorine-based gas and substantially contains no oxygen.
20. The method of manufacturing a reflective mask according to claim 19 , wherein the etching mask pattern is stripped after having formed the absorber pattern.
21. A method of manufacturing a semiconductor device having a step for placing the reflective mask obtained according to the method of manufacturing a reflective mask according to claim 19 in an exposure apparatus having an exposure light source emitting EUV light, and transferring a transfer pattern to a resist film formed on a transferred substrate.