Electrostatic discharge protection semiconductor device
An ESD protection semiconductor device includes a substrate. A gate set disposed on the substrate. A plurality of source fins and a plurality of drain fins having a first conductivity type are disposed in the substrate respectively at two sides of the gate set. A first doped fin is disposed in the substrate and positioned in between the source fins and spaced apart from the source fins. The first doped fin comprises a second conductivity type that is complementary to the first conductivity type. A second doped fin is formed in one of the drain fins and isolated from the one of the drain fins by an isolation structure. The second doped fin is electrically connected to the first doped fin.
1. An ESD protection semiconductor device, comprising:
a substrate;
a gate set disposed on the substrate;
a plurality of source fins and a plurality of drain fins disposed in the substrate respectively at two sides of the gate set, wherein the source fins and the drain fins comprise a first conductivity type;
a first doped fin disposed in the substrate at one side of the gate set the same as the source fins, wherein the first doped fin is positioned in between the source fins and spaced apart from the source fins, wherein the first doped fin comprises a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other; and
a second doped fin formed in one of the drain fins and isolated from the one of the drain fins by an isolation structure, wherein the second doped fin is electrically connected to the first doped fin;
wherein the substrate comprises the second conductivity type;
wherein the second doped fin comprises the second conductivity type;
wherein the drain fins, the substrate under the isolation structure and the single doped region construct a diode having a current direction parallel with the drain fins.
2. ESD protection semiconductor device according to claim 1 , wherein the source fins are electrically connected to a ground pad, and the drain fins are electrically connected to an IO pad.
3. The ESD protection semiconductor device according to claim 1 , wherein the source fins and the drain fins extend along a first direction and are arranged in parallel along a second direction, wherein the first direction and the second direction are perpendicular.
4. The ESD protection semiconductor device according to claim 3 , wherein the first doped fin and the second doped fin extend along the first direction.
5. The ESD protection semiconductor device according to claim 3 , further comprising at least a contact plug disposed on the substrate, extending along the second direction and overlapping on the drain fins to electrically connect to the drain fins.
6. The ESD protection semiconductor device according to claim 5 , wherein the contact plug overlaps the one of the drain fins having the second doped fin on a region that is isolated from the second doped fin.
7. The ESD protection semiconductor device according to claim 3 , further comprising at least a contact plug disposed on the substrate, extended along the second direction and overlapping on the source fins to electrically connect to the source fins.
8. The ESD protection semiconductor device according to claim 7 , wherein the contact plug connected to the source fins does not overlap the first doped fin.
9. The ESD protection semiconductor device according to claim 1 , further comprising another isolation structure formed in the substrate to electrically isolate the plurality of source fins and the plurality of drain fins,
wherein the isolation structure and the another isolation structure collectively surround the second doped fin.