Imaging device and electronic device
An object is to provide an imaging device in which a circuit for reading a signal is provided in a pixel region. The imaging device includes a first pixel and a second pixel. The first pixel is capable of outputting a first signal output from a pixel circuit included in the first pixel or a second signal input from the first pixel in the previous stage, to the first pixel or the second pixel in the next stage. The second pixel is capable of outputting, to the outside, the first signal or the second signal, which is input from the first pixel in the previous stage, or a third signal output from a pixel circuit included in the second pixel.
1. An imaging device comprising:
a pixel comprising a pixel circuit and a circuit; and
wherein:
the pixel circuit comprises a photoelectric conversion element, a first transistor, and a second transistor,
the circuit comprises a first capacitor, a second capacitor, a third transistor, and a fourth transistor,
the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,
the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,
one of a source and a drain of the second transistor is electrically connected to a first wiring,
the other of the source and the drain of the second transistor is electrically connected to a terminal of the first capacitor and a gate of the third transistor,
one of a source and a drain of the third transistor is electrically connected to a second wiring,
the other of the source and the drain of the third transistor is electrically connected to a terminal of the second capacitor and a gate of the fourth transistor, and
one of a source and a drain of the fourth transistor is electrically connected to the second wiring.
2. An imaging device comprising:
a pixel comprising a pixel circuit and a circuit; and
wherein:
the pixel circuit comprises a photoelectric conversion element, a first transistor, and a second transistor,
the circuit comprises a first capacitor, a second capacitor, a third transistor, and a fourth transistor,
at least one of the first to fourth transistors comprises a channel formation region which comprises an oxide semiconductor,
the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,
the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,
one of a source and a drain of the second transistor is electrically connected to a first wiring,
the other of the source and the drain of the second transistor is electrically connected to a terminal of the first capacitor and a gate of the third transistor,
one of a source and a drain of the third transistor is electrically connected to a second wiring,
the other of the source and the drain of the third transistor is electrically connected to a terminal of the second capacitor and a gate of the fourth transistor,
one of a source and a drain of the fourth transistor is electrically connected to the second wiring, and
the other of the source and the drain of the fourth transistor is electrically connected to an output terminal.