Tapered resistive memory with interface dipoles
Tapered resistive memory devices with interface dipoles are provided. In one aspect, a ReRAM device includes: a bottom electrode; a core dielectric that is thermally conductive disposed on the bottom electrode; an oxide resistive memory cell disposed along outer sidewalls of the core dielectric, wherein the oxide resistive memory cell has inner edges adjacent to the core dielectric, and outer edges that are tapered; an outer coating disposed adjacent to the outer edges of the oxide resistive memory cell; and a top electrode disposed on the core dielectric, the oxide resistive memory cell, and the outer coating. A method of forming a ReRAM device as well as a method of operating a ReRAM device are also provided.
1. A resistive random-access memory (ReRAM) device, comprising:
a bottom electrode;
a core dielectric that is thermally conductive disposed on the bottom electrode;
an oxide resistive memory cell disposed along outer sidewalls of the core dielectric, wherein the oxide resistive memory cell has inner edges adjacent to the core dielectric, and outer edges that are tapered;
an outer coating disposed adjacent to the outer edges of the oxide resistive memory cell; and
a top electrode disposed on the core dielectric, the oxide resistive memory cell, and the outer coating.
2. The ReRAM device of claim 1 , wherein the core dielectric and the outer coating each comprises a high group electronegativity (Gp) dielectric material, and wherein the oxide resistive memory cell comprises a low Gp dielectric material.
3. The ReRAM device of claim 2 , wherein the high Gp dielectric material is selected from the group consisting of: titanium oxide (TiO 2 ), aluminum oxide (AlO 2 ), and combinations thereof.
4. The ReRAM device of claim 2 , wherein the low Gp dielectric material is selected from the group consisting of: hafnium oxide (HfO 2 ), lanthanum oxide (LaO 2 ), strontium titanate (SrTiO 3 ), and combinations thereof.
5. The ReRAM device of claim 2 , wherein the core dielectric and the outer coating are formed from a same high Gp dielectric material.
6. The ReRAM device of claim 1 , wherein the outer edges of the oxide resistive memory cell are tapered at an angle θ of from about 10° to about 80° and ranges therebetween.
7. The ReRAM device of claim 1 , wherein the inner edges of the oxide resistive memory cell are vertical.
8. The ReRAM device of claim 1 , wherein the bottom electrode comprises a reactive metal selected from the group consisting of: titanium nitride (TiN) having a Ti/N ratio of greater than 1, Ti-containing alloys, aluminum (Al)-containing alloys, and combinations thereof.
9. The ReRAM device of claim 1 , wherein the top electrode comprises an inert metal selected from the group consisting of: TiN having a Ti/N ratio of less than or equal to 1, tantalum nitride (TaN), tungsten (W), platinum (Pt), iridium (Ir), ruthenium (Ru), and combinations thereof.
10. The ReRAM device of claim 1 , wherein an exposed top portion of the oxide resistive memory cell extends out from the core dielectric and the outer coating, and wherein the top electrode wraps around the exposed top portion of the oxide resistive memory cell.
11. A method of operating a ReRAM device, the method comprising the steps of:
providing the ReRAM device comprising: a bottom electrode, a core dielectric that is thermally conductive disposed on the bottom electrode; an oxide resistive memory cell disposed along outer sidewalls of the core dielectric, wherein the oxide resistive memory cell has inner edges adjacent to the core dielectric, and outer edges that are tapered, an outer coating disposed adjacent to the outer edges of the oxide resistive memory cell, and a top electrode disposed on the core dielectric, the oxide resistive memory cell, and the outer coating;
applying a positive bias to the bottom electrode to form filaments in the oxide resistive memory cell, whereby the outer edges of the oxide resistive memory cell that are tapered geometrically constrain formation of the filaments toward the inner edges of the oxide resistive memory cell; and
applying a negative bias to the bottom electrode to break the filaments.
12. The method of claim 11 , wherein the core dielectric and the outer coating each comprises a high Gp dielectric material selected from the group consisting of: TiO 2 , AlO 2 , and combinations thereof, wherein the oxide resistive memory cell comprises a low Gp dielectric material selected from the group consisting of: HfO 2 , LaO 2 , SrTiO 3 , and combinations thereof, and wherein the method further comprises the step of:
introducing an interfacial dipole at the inner edges and the outer edges of the oxide resistive memory cell.
13. The method of claim 11 , wherein an exposed top portion of the oxide resistive memory cell extends out from the core dielectric and the outer coating, and wherein the top electrode wraps around the exposed top portion of the oxide resistive memory cell.