Touch control panel and manufacturing method thereof
View Patent ↗The present invention provides a touch control panel and a manufacturing method thereof. The present invention, by arranging an insulating layer with elastic modulus different from an adjacent inorganic layer or organic layer between a first metal layer and a second metal layer, makes their contact surfaces uneven. When light emitted by an electroluminescent (EL) layer reaches the uneven contact surfaces, refraction of different angles occurs, thereby increasing a viewing angle range of organic light-emitting diodes (OLEDs).
1. A touch control panel, comprising:
an inorganic layer;
a first metal layer disposed on the inorganic layer;
an insulating layer disposed on the first metal layer;
a second metal layer disposed on the insulating layer; and
an organic layer disposed on the second metal layer;
wherein an elastic modulus of the insulating layer is different from an elastic modulus of the inorganic layer and an elastic modulus of the organic layer.
2. The touch control panel as claimed in claim 1 , wherein the inorganic layer is made of a material comprising at least one of silicon nitride, silicon oxynitride, silicon carbonitride, or silica.
3. The touch control panel as claimed in claim 1 , wherein the insulating layer is made of a material comprising at least one of silicon nitride, silicon oxynitride, silicon carbonitride, silica, or acrylic.
4. The touch control panel as claimed in claim 1 , wherein the first metal layer and the second metal layer are made of materials comprising at least one of titanium, aluminum, molybdenum, or silver.
5. The touch control panel as claimed in claim 1 , wherein the organic layer is made of a material comprising at least one of acrylic, hexamethyldisiloxane, or silyl compounds.
6. A manufacturing method of a touch control panel, comprising following steps:
providing an organic light-emitting diode (OLED) display panel, wherein the OLED display panel comprises a thin film transistor backplane;
providing an electroluminescent (EL) layer on the thin film transistor backplane;
providing an encapsulation layer on the EL layer, and forming an inorganic layer on the encapsulation layer;
forming a first metal layer on the inorganic layer;
forming an insulating layer on the first metal layer, and forming at least one via on the insulating layer;
forming a second metal layer on the insulating layer; and
forming an organic layer on the second metal layer,
wherein an elastic modulus of the insulating layer is different from an elastic modulus of the inorganic layer and an elastic modulus of the organic layer.
7. The manufacturing method as claimed in claim 6 , wherein in the step of forming the insulating layer on the first metal layer and forming the at least one via on the insulating layer, the at least one via is formed at a position on the insulating layer corresponding to an end point of the first metal layer through exposure and etching processes.
8. The manufacturing method as claimed in claim 7 , wherein the end point and a pixel unit in the EL layer are staggered from each other in a vertical direction.
9. The manufacturing method as claimed in claim 6 , wherein the second metal layer is electrically connected to the first metal layer through the at least one via.