Method for producing vapor deposition mask, method for producing organic semiconductor element, and method for producing organic EL display
In a method for producing a vapor deposition mask including a resin mask 20 including resin mask openings 25 corresponding to a pattern to be produced by vapor deposition, and a metal mask 10 including a metal mask opening 15 , the metal mask being stacked on one surface of the resin mask, when the plurality of resin mask openings 25 are formed, as to any one resin mask opening 25 a of the plurality of resin mask openings 25 , the resin mask opening 25 is formed such that in a thicknesswise cross section of the resin mask, an acute angle (θ 1 ) formed by one inner wall surface forming the one resin mask opening and the other surface of the resin mask is different from an acute angle (θ 2 ) formed by the other inner wall surface forming the one resin mask opening and the other surface of the resin mask.
1. A method for producing a vapor deposition mask including a resin mask including resin mask openings corresponding to a pattern to be produced by vapor deposition, and a metal mask including a metal mask opening, the metal mask being stacked on one surface of the resin mask, the method comprising:
a step of preparing a metal mask-equipped resin plate in which the metal mask is stacked on one surface of a resin plate; and
a step of forming a plurality of resin mask openings in the resin plate by radiating a laser in an irradiation direction onto the resin plate through the metal mask opening of the metal mask-equipped resin plate, wherein the irradiation direction and the resin plate form an acute angle;
wherein in the step of forming the plurality of resin mask openings,
at least one resin mask opening of the plurality of resin mask openings is formed such that in a thicknesswise cross section of the resin mask, a first acute angle is formed on a first surface of an inner wall of the resin mask forming the at least one resin mask opening, and a second acute angle is formed on a second surface of the inner wall of the resin mask forming the at least one resin mask opening; wherein the first acute angle is different from the second acute angle.
2. A method for producing an organic semiconductor element, the method comprising:
a vapor deposition pattern forming step of forming a vapor deposition pattern on a vapor deposition target using a vapor deposition mask, wherein
the vapor deposition mask used in the vapor deposition pattern forming step is the vapor deposition mask produced by the method for producing a vapor deposition mask according to claim 1 .
3. A method for producing an organic EL display, wherein the organic semiconductor element produced by the method for producing an organic semiconductor element according to claim 2 is used.
4. A method for producing a vapor deposition mask including a resin mask including resin mask openings corresponding to a pattern to be produced by vapor deposition, and a metal mask including a metal mask opening, the metal mask being stacked on one surface of the resin mask, the method comprising:
a step of preparing a metal mask-equipped resin plate in which the metal mask is stacked on one surface of a resin plate; and
a step of forming a plurality of resin mask openings in the resin plate by radiating a laser in an irradiation direction onto the resin plate through the metal mask opening of the metal mask-equipped resin plate, wherein the irradiation direction and the resin plate form an acute angle;
wherein in the step of forming the plurality of resin mask openings,
the resin mask is formed such that in a thicknesswise cross section of the resin mask, a first acute angle is formed on a first inner wall surface of the resin mask forming first resin mask opening of the plurality of resin mask openings, and a second acute angle is formed on a second inner wall surface of the resin mask forming a second resin mask opening of the resin mask; wherein the first acute angle is different from the second acute angle.
5. The method for producing a vapor deposition mask according to claim 4 , wherein in the step of forming the plurality of resin mask openings,
the resin mask is formed such that in a thicknesswise cross section of the resin mask, a third acute angle is formed on a third inner wall surface of the resin mask forming the first resin mask opening; wherein the first acute angle is different from the third acute angle.
6. A method for producing a vapor deposition mask including openings corresponding to a pattern to be produced by vapor deposition, the method comprising:
a step of preparing a resin plate; and
a step of forming a plurality of openings in the resin plate by radiating a laser in an irradiation direction onto the resin plate, wherein the irradiation direction and the resin plate form an acute angle;
wherein in the step of forming the plurality of openings,
a surface of surfaces of the vapor deposition mask, that is positioned on a vapor deposition source side is regarded as one surface of the vapor deposition mask,
at least one opening of the plurality of openings is formed such that in a thicknesswise cross section of the vapor deposition mask, a first acute angle is formed on a first surface of an inner wall of the resin mask forming the at least one opening of the vapor deposition mask, and a second acute angle is formed on a second surface of the inner wall of the resin mask forming the at least one opening of the vapor deposition mask; wherein the first acute angle is different from the second acute angle.
7. A method for producing a vapor deposition mask including openings corresponding to a pattern to be produced by vapor deposition, the method comprising:
a step of preparing a resin plate; and
a step of forming a plurality of openings in the resin plate by radiating a laser in an irradiation direction onto the resin plate, wherein the irradiation direction and the resin plate form an acute angle;
wherein in the step of forming the plurality of openings,
a surface of surfaces of the vapor deposition mask, that is positioned on a vapor deposition source side is regarded as one surface of the vapor deposition mask,
at least one opening of the plurality of openings is formed such that in a thicknesswise cross section of the vapor deposition mask, a first acute angle is formed on a first inner wall surface of the resin mask forming a first opening of the plurality of openings of the vapor deposition mask, and a second acute angle is formed on a second inner wall surface of the resin mask forming a second opening of the vapor deposition mask; wherein the first acute angle is different from the second acute angle.
8. The method for producing a vapor deposition mask according to claim 7 , wherein in the step of forming the plurality of openings,
the at least one opening of the plurality of openings is formed such that in a thicknesswise cross section of the vapor deposition mask, a third acute angle is formed on a third inner wall surface of the resin mask forming the first opening; wherein the first acute angle is different from the third acute angle.