Piezoelectric vibrator and piezoelectric vibration device
A piezoelectric vibrator is a piezoelectric vibrator including a vibration portion. The vibration portion has an n-type Si layer which is a degenerated semiconductor and which has a resistivity of not less than 0.5 mΩcm and not greater than 1.2 mΩcm and preferably not greater than 0.9 mΩcm.
1. A piezoelectric vibrator comprising a vibration portion having an n-type Si layer and which has a resistivity of not less than 0.5 mΩcm and not greater than 0.9 mΩcm.
2. The piezoelectric vibrator according to claim 1 , wherein the vibration portion has a piezoelectric thin film formed on the Si layer.
3. The piezoelectric vibrator according to claim 2 , wherein the vibration portion further has a silicon oxide layer formed on at least one of an upper surface of the Si layer, a lower surface of the Si layer, and an upper surface of the piezoelectric thin film.
4. The piezoelectric vibrator according to claim 1 , wherein the vibrator is planar and operates in an in plane vibration mode.
5. The piezoelectric vibrator according to claim 1 , wherein the vibrator is planar and operates in an out of plane vibration mode.
6. A piezoelectric vibration device comprising:
a lower substrate;
an upper substrate cooperating with the lower substrate to form a vibration space between the lower substrate and the upper substrate; and
a piezoelectric vibrator disposed within the vibration space, the piezoelectric vibrator including a vibration portion having an n-type Si layer and which has a resistivity of not less than 0.5 mΩcm and not greater than 0.9 mΩcm.
7. The piezoelectric vibration device according to claim 6 , wherein the vibration portion has a piezoelectric thin film formed on the Si layer.
8. The piezoelectric vibration device according to claim 7 , wherein the vibration portion further has a silicon oxide layer formed on at least one of an upper surface of the Si layer, a lower surface of the Si layer, and an upper surface of the piezoelectric thin film.
9. The piezoelectric vibration device according to claim 6 , wherein the vibrator is planar and operates in an in plane vibration mode.
10. The piezoelectric vibration device according to claim 6 , wherein the vibrator is planar and operates in an out of plane vibration mode.
11. The piezoelectric vibrator according to claim 6 , wherein the n-type Si layer is a degenerated semiconductor.
12. The piezoelectric vibrator according to claim 6 , wherein the piezoelectric vibrator is a tuning fork type crystal vibrator.
13. The piezoelectric vibrator according to claim 1 , wherein the n-type Si layer is a degenerated semiconductor.
14. The piezoelectric vibrator according to claim 1 , wherein the piezoelectric vibrator is a tuning fork type crystal vibrator.