IP Library › Granted Patent US 11,198,648
Granted Patent B2
US 11,198,648 · App. 15/463,251 · Granted Dec 14, 2021

Cordierite-based sintered body, method for producing the same, and composite substrate

Inventors: Yoshinori Isoda (Ichinomiya, JP); Yoshio Suzuki (Nagoya, JP); Katsuhiro Inoue (Ama-Gun, JP); Yuji Katsuda (Tsushima, JP)
Assignee: NGK Insulators, Ltd.
C04B35/195C04B35/62605C04B35/62675C04B35/645C04B35/6455C04B37/00H01L41/00C04B2235/3206C04B2235/3481C04B2235/3873C04B2235/5436C04B2235/5445C04B2235/604C04B2235/656C04B2235/6562C04B2235/6567C04B2235/74C04B2235/76C04B2235/77C04B2235/785C04B2235/786C04B2235/80C04B2235/96C04B2235/963C04B2235/9607C04B2237/341C04B2237/704Y10T428/249956Y10T428/249967Y10T428/249986
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Quick Facts
Patent No.
US 11,198,648
App. No.
15/463,251
Granted
Dec 14, 2021
Kind
B2
Abstract

A cordierite-based sintered body according to the present invention contains cordierite as a main component and silicon nitride or silicon carbide. The cordierite-based sintered body preferably has a thermal expansion coefficient less than 2.4 ppm/° C. at 40° C. to 400° C., an open porosity of 0.5% or less, and an average grain size of 1 μm or less.

Claims (22)

1. A composite substrate comprising, a piezoelectric substrate bonded to a cordierite-based sintered body support substrate,

wherein the cordierite-based sintered body contains cordierite as a main component and silicon nitride, the cordierite-based sintered body having:

a thermal expansion coefficient less than 2.4 ppm/° C. at 40° C. to 400° C.,

an open porosity of 0.5% or less, and

an average grain size of 0.61 μm or less,

wherein the cordierite-based sintered body has a Young's modulus of 160 GPa or more, and

wherein the cordierite-based sintered body contains silicon nitride and has a polished surface, and when the polished surface is subjected to observation of a backscattered electron image and a composition analysis with an SEM and then an area ratio of a cordierite phase to a silicon nitride phase is determined from a contrast ratio of the image and converted to a volume ratio of the sintered body, the cordierite phase is 60% to 90% by volume and the silicon nitride phase is 10% to 40% by volume;

wherein the polished surface has a center-line average roughness Ra of 1.5 nm or less; and

wherein the polished surface is a surface to which the piezoelectric substrate is bonded.

2. The composite substrate according to claim 1 , wherein the number of pores that have a maximum length of 1 μm or more and present in an area of 100 μm×100 μm of the polished surface is 10 or less.

3. The composite substrate according to claim 1 , wherein the cordierite-based sintered body has a four-point flexural strength of 220 MPa or more.

4. A method for producing a composite substrate in which a piezoelectric substrate is bonded to a cordierite-based sintered body-comprising the steps of:

(a) preparing a raw-material powder mixture by mixing 60% to 90% by volume of a cordierite powder having an average particle diameter of 0.1 to 1 μm and 10% to 40% by volume of a silicon nitride powder having an average particle diameter of 0.1 to 1 μm in a total amount of 100% by; and

(b) producing the cordierite-based sintered body by forming the raw material powder mixture into a compact having a predetermined form and subjecting the compact to hot pressing at a pressing pressure of 20 to 300 kgf/cm 2 and a firing temperature of 1350° C. to 1450° C.,

wherein the cordierite-based sintered body has a thermal expansion coefficient less than 2.4 ppm/° C. at 40° C. to 400° C.,

an open porosity of 0.5% or less, and

an average grain size of 0.61 μm or less, and

wherein the cordierite-based sintered body has a Young's modulus of 160 GPa or more,

wherein the cordierite-based sintered body contains silicon nitride and has a polished surface, and when the polished surface is subjected to observation of a backscattered electron image and a composition analysis with an SEM and then an area ratio of a cordierite phase to a silicon nitride phase is determined from a contrast ratio of the image and converted to a volume ratio of the sintered body, the cordierite phase is 60% to 90% by volume and the silicon nitride phase is 10% to 40% by volume,

wherein the polished surface has a center-line average roughness Ra of 1.5 nm or less, and

wherein the polished surface is a surface to which the piezoelectric functional substrate is bonded.

5. The composite substrate according to claim 1 , wherein the piezoelectric substrate is lithium tantalate or lithium niobate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2017
From: ISODA, YOSHINORI; SUZUKI, YOSHIO; INOUE, KATSUHIRO; KATSUDA, YUJI
To: NGK INSULATORS, LTD.
Reel/Frame 041642/0721 →
Priority Claims (2)
JP JP2016-058969 · Mar 23, 2016 · national
JP JP2017-033437 · Feb 24, 2017 · national
Continuity (1)
Related Publication 20170275207A1 · Sep 28, 2017
Cited By (1)
US 12,692,172