Developer composition, for EUV light source, for forming photosensitive photoresist micropattern
A photoresist developer composition for an EUV (extreme ultraviolet) light source in a semiconductor-manufacturing process is proposed. Further, the photoresist developer composition for an EUV light source for forming a micropattern and a lithography process of forming a pattern on a semiconductor substrate using an EUV light source using the composition are proposed. The composition includes an aqueous solution containing 2 to 10 wt % of tetraethylammonium hydroxide (TEAH). When a photoresist is developed, an Eop is reduced, which shortens a process time, prevents a pattern from collapsing, and enables a pattern to have a uniform profile.
1. A photoresist developer composition for an EUV light source, consisting of:
4 to 10 wt % of tetraethylammonium hydroxide and 90 to 96 wt % of deionized water to develop a photoresist in a lithography process of forming a pattern on a semiconductor substrate using the EUV light source.
2. A lithography process of forming a pattern on a semiconductor substrate using an EUV light source using the photoresist developer composition for the EUV light source of claim 1 .