Semiconductor device with epitaxial liftoff layers for directly converting radioisotope emissions into electrical power
A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.
1. A device for producing electricity, comprising:
a first device, comprising in a stacked relationship:
a first conductive radioisotope source having first and second oppositely disposed surfaces;
an independent conductive substrate overlying and in contact with the first surface of the first conductive radioisotope source;
a plurality of second devices, each comprising in a stacked relationship:
a second conductive radioisotope source having oppositely disposed first and second surfaces;
a second back side metal layer overlying and in conductive communication with the first surface of the second conductive radioisotope source;
second epitaxial liftoff (ELO) layers comprising n doped layers and p doped layers, the second epitaxial liftoff layers overlying and in conductive communication with the second back side metal layer;
a second conductive region in conductive communication with an uppermost layer of the second epitaxial liftoff layers;
a third device, comprising:
a third back side metal layer;
third epitaxial liftoff layers comprising n doped layers and p doped layers, the third epitaxial liftoff layers overlying and in conductive contact with the third back side metal layer;
a third conductive contact region in conductive communication with an uppermost layer of the third epitaxial liftoff layers and in conductive communication with the second conductive radioisotope source in a lowermost device of the stacked plurality of second devices; and
the second conductive region in an uppermost device of the stacked plurality of second devices in conductive contact with the second surface of the first conductive radioisotope source.
2. The device of claim 1 , the electricity for supplying to a load or for storing in a storage device.
3. The device of claim 1 , wherein the first and second conductive regions each comprises a conductive ring.
4. The device of claim 1 , wherein the first and the second conductive contact regions each comprise contact pads, contact grids/lines, conductive pillars, conductive posts, conductive blocks, conductive vertical structures, conductive columns, conductive surfaces, or another conductive structure for carrying current.
5. The device of claim 1 wherein current flows within a completed circuit between the independent conductive substrate, or the first radioisotope source, or the second conductive region, or a doped material layer within the uppermost layer of the second epitaxial liftoff layers, and the third back side metal layer, the current generated by action of radioisotope particles or gamma rays generated by the radioisotope sources.
6. The device of claim 1 , wherein the second and third epitaxial liftoff layers further comprise one or more of a p-doped layer and an n-doped layer forming a junction, a back surface field reflector layer, a window layer, a cap layer, and a crystal lattice matching layer.
7. The device of claim 1 , wherein particles or gamma rays emitted by the first and second conductive radioisotope sources create electron-hole pairs in the respective second and third epitaxial liftoff layers, and wherein the conductive radioisotope source comprises a beta source, further comprising tritium, nickel-63, promethium-147, tritium metal hydride, or a polymer containing tritium.
8. The device of claim 1 , wherein a material of the n doped layers and the p doped layers comprises GaAs, InAlP, InGaP, InAlGaP, or AlGaAs.
9. A battery for producing electricity comprising a first device according to claim 1 connected in parallel to a second device according to claim 1 .