Semiconductor structure with metal containing layer
Semiconductor structures and method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a source/drain structure formed adjacent to the gate structure in the substrate and a contact formed over the source/drain structure. The semiconductor structure further includes a metal-containing layer formed over the contact and a dielectric layer covering the gate structure and the metal-containing layer. The semiconductor structure further includes a first conductive structure formed through dielectric layer and the metal-containing layer and landing on the contact. In addition, a bottom surface of the metal-containing layer is higher than a top surface of the gate structure.
1. A semiconductor structure, comprising:
a substrate;
a gate structure formed over the substrate;
a source/drain structure formed adjacent to the gate structure in the substrate;
a contact formed over the source/drain structure;
a metal-containing layer formed over the contact;
a dielectric layer covering the gate structure and the metal-containing layer; and
a first conductive structure formed through dielectric layer and the metal-containing layer and landing on the contact,
wherein a bottom surface of the metal-containing layer is higher than a top surface of the gate structure.
2. The semiconductor structure as claimed in claim 1 , further comprising:
a mask structure formed over the gate structure, wherein the mask structure is covered by the dielectric layer.
3. The semiconductor structure as claimed in claim 2 , further comprising:
a second conductive structure formed through the dielectric layer and the mask structure and landing on the gate structure.
4. The semiconductor structure as claimed in claim 3 , wherein a top surface of the first conductive structure is substantially level with a top surface of the second conductive structure.
5. The semiconductor structure as claimed in claim 2 , wherein a top surface of the mask structure is substantially level with a top surface of the metal-containing layer.
6. The semiconductor structure as claimed in claim 2 , wherein a top surface of the mask structure is higher than or lower than a top surface of the metal-containing layer.
7. The semiconductor structure as claimed in claim 1 , further comprising:
a spacer formed on a sidewall of the gate structure, wherein a top portion of the spacer is lower than a top surface of the mask structure.
8. A semiconductor structure, comprising:
a substrate;
a gate structure formed over the substrate;
a mask structure formed over the gate structure;
a source/drain structure formed adjacent to the gate structure in the substrate;
a contact formed over the source/drain structure;
a metal-containing layer formed over the contact;
a first conductive structure formed through the metal-containing layer over the contact,
wherein the mask structure is thicker than the metal-containing layer.
9. The semiconductor structure as claimed in claim 8 , further comprising:
a spacer sandwiched between the gate structure and the contact, wherein the spacer has a first height closer to the contact and a second height closer to the gate structure, and the first height is greater than the second height.
10. The semiconductor structure as claimed in claim 8 , further comprising:
a second conductive structure formed through the mask structure over the gate structure, wherein a first interface between the first conductive structure and the contact is higher than a second interface between the second conductive structure and the gate structure.
11. The semiconductor structure as claimed in claim 10 , wherein the first conductive structure and the second conductive structure are separated by the mask structure and the metal-containing layer.
12. The semiconductor structure as claimed in claim 8 , wherein the mask structure is in direct contact with the metal-containing layer.
13. The semiconductor structure as claimed in claim 8 , wherein a top portion of the mask structure is wider than a bottom portion of the mask structure.
14. A semiconductor structure, comprising:
a substrate;
a gate structure formed over the substrate;
a mask structure formed over the gate structure, wherein a top portion of the mask structure is wider than a bottom portion of the mask structure;
a first source/drain structure formed at a first side of the gate structure;
a first contact formed over the first source/drain structure;
a first metal-containing layer formed over the first contact; and
a spacer sandwiched between the first contact and the gate structure,
wherein the top portion of the mask structure is in direct contact with the first metal-containing layer and a portion of the spacer is sandwiched between the bottom portion of the mask structure and the first contact.
15. The semiconductor structure as claimed in claim 14 , further comprising:
a second source/drain structure formed at a second side of the gate structure; and
a second contact formed over the second source/drain structure,
wherein the mask structure is sandwiched between the first contact and the second contact.
16. The semiconductor structure as claimed in claim 15 , further comprising:
a first conductive structure in direct contact with a top surface of the first contact and a top surface of the second contact.
17. The semiconductor structure as claimed in claim 16 , wherein the first conductive structure is in contact with the mask structure.
18. The semiconductor structure as claimed in claim 14 , wherein a top surface of the mask structure is lower than a top surface of the first metal-containing layer and higher than a bottom surface of the first metal-containing layer.
19. The semiconductor structure as claimed in claim 14 , wherein a top surface of the mask structure is substantially level with a top surface of the first contact.
20. The semiconductor structure as claimed in claim 14 , wherein the mask structure is thicker than the metal-containing layer.