Power conversion device with temperature protection
Provided is a power conversion device capable of directly performing a protection operation according to the state of a cooler. A control unit includes: a semiconductor switching element loss calculation unit which calculates a loss in a semiconductor switching element with use of a switching state of the semiconductor switching element, and a current detection value or a voltage detection value; and a cooler state estimation unit which estimates a state of a cooler on the basis of a loss calculation value from the semiconductor switching element loss calculation unit and a temperature detection value from a temperature detector. The control unit limits current flowing to the semiconductor switching element on the basis of the state of the cooler.
1. A power conversion device comprising:
a semiconductor switching element which converts power by a switching operation;
a cooler which cools the semiconductor switching element;
a control unit which controls the semiconductor switching element;
a temperature detector which detects a temperature of the semiconductor switching element;
a current detector which detects current flowing to the semiconductor switching element; and
a voltage detector which detects voltage applied to the semiconductor switching element,
wherein the control unit includes
a semiconductor switching element loss calculation unit which calculates a loss in the semiconductor switching element with use of a switching state of the semiconductor switching element, and both or either of a current detection value and a voltage detection value; and
a cooler state estimation unit which estimates a state of the cooler from a loss calculation value from the semiconductor switching element loss calculation unit and a temperature detection value from the temperature detector, and the control unit limits current flowing to the semiconductor switching element on the basis of the state of the cooler,
wherein the cooler state estimation unit includes
a temperature detection value holding unit which holds a previous temperature detection value,
a temperature detection value estimation unit which estimates a temperature detection estimation value with use of the held temperature detection value and the loss calculation value of the semiconductor switching element, and
a cooler state determination unit which estimates the state of the cooler through comparison between the temperature detection estimation value and the temperature detection value.
2. The power conversion device according to claim 1 , wherein the control unit limits current flowing to the semiconductor switching element also on the basis of the temperature detection value.
3. The power conversion device according to claim 2 , wherein the temperature detection value estimation unit approximates, by a zero- or higher-order lag system, a correlation between the held temperature detection value and the temperature detection estimation value on the basis of the loss calculation value of the semiconductor switching element.
4. The power conversion device according to claim 3 , wherein
the control unit includes a junction temperature calculation unit which estimates a junction temperature of the semiconductor switching element on the basis of the loss calculation value of the semiconductor switching element, the state of the cooler, and the temperature detection value, and
the control unit limits current flowing to the semiconductor switching element on the basis of the junction temperature.
5. The power conversion device according to claim 2 , wherein
the control unit includes a junction temperature calculation unit which estimates a junction temperature of the semiconductor switching element on the basis of the loss calculation value of the semiconductor switching element, the state of the cooler, and the temperature detection value, and
the control unit limits current flowing to the semiconductor switching element on the basis of the junction temperature.
6. The power conversion device according to claim 5 , wherein the junction temperature calculation unit includes
a junction temperature characteristic selection unit which selects, according to the state of the cooler, a correlation between the loss calculation value of the semiconductor switching element and a difference between the temperature detection value and the junction temperature of the semiconductor switching element, and
a junction temperature increase calculation unit which calculates a temperature increase value which is the difference between the temperature detection value and the junction temperature of the semiconductor switching element with use of the correlation selected by the junction temperature characteristic selection unit, the loss calculation value of the semiconductor switching element, and the temperature detection value, and
the junction temperature calculation unit adds the temperature detection value and the temperature increase value, to estimate the junction temperature of the semiconductor switching element.
7. The power conversion device according to claim 2 , the power conversion device comprising one temperature detector which detects a temperature at such a location as to establish a correlation with temperatures of a plurality of the semiconductor switching elements.
8. The power conversion device according to claim 2 , the power conversion device comprising a plurality of groups of the semiconductor switching element and the temperature detector, each of the plurality of groups of the semiconductor switching element and the temperature detector including one temperature detector which detects a temperature at such a location as to establish a correlation with temperatures of a plurality of the semiconductor switching elements.
9. The power conversion device according to claim 2 , wherein
the state of the cooler is classified into a normal state and a plurality of abnormal states, and
current flowing to the semiconductor switching element is limited on the basis of any of the plurality of abnormal states.
10. The power conversion device according to claim 1 , wherein the temperature detection value estimation unit approximates, by a zero- or higher-order lag system, a correlation between the held temperature detection value and the temperature detection estimation value on the basis of the loss calculation value of the semiconductor switching element.
11. The power conversion device according to claim 10 , wherein
the control unit includes a junction temperature calculation unit which estimates a junction temperature of the semiconductor switching element on the basis of the loss calculation value of the semiconductor switching element, the state of the cooler, and the temperature detection value, and
the control unit limits current flowing to the semiconductor switching element on the basis of the junction temperature.
12. The power conversion device according to claim 1 , wherein the control unit includes
a junction temperature calculation unit which estimates a junction temperature of the semiconductor switching element on the basis of the loss calculation value of the semiconductor switching element, the state of the cooler, and the temperature detection value, and
the control unit limits current flowing to the semiconductor switching element on the basis of the junction temperature.
13. The power conversion device according to claim 12 , wherein
the junction temperature calculation unit includes
a junction temperature characteristic selection unit which selects, according to the state of the cooler, a correlation between the loss calculation value of the semiconductor switching element and a difference between the temperature detection value and the junction temperature of the semiconductor switching element, and
a junction temperature increase calculation unit which calculates a temperature increase value which is the difference between the temperature detection value and the junction temperature of the semiconductor switching element with use of the correlation selected by the junction temperature characteristic selection unit, the loss calculation value of the semiconductor switching element, and the temperature detection value, and
the junction temperature calculation unit adds the temperature detection value and the temperature increase value, to estimate the junction temperature of the semiconductor switching element.
14. The power conversion device according to claim 13 , wherein the correlation selected by the junction temperature characteristic selection unit is approximated by a zero- or higher-order lag system.
15. The power conversion device according to claim 1 , the power conversion device comprising one temperature detector which detects a temperature at such a location as to establish a correlation with temperatures of a plurality of the semiconductor switching elements.
16. The power conversion device according to claim 1 , the power conversion device comprising a plurality of groups of the semiconductor switching element and the temperature detector, each of the plurality of groups of the semiconductor switching element and the temperature detector including one temperature detector which detects a temperature at such a location as to establish a correlation with temperatures of a plurality of the semiconductor switching elements.
17. The power conversion device according to claim 1 , wherein
the state of the cooler is classified into a normal state and a plurality of abnormal states, and
current flowing to the semiconductor switching element is limited on the basis of any of the plurality of abnormal states.
18. A power conversion device comprising:
a semiconductor switching element which converts power by a switching operation;
a cooler which cools the semiconductor switching element;
a control unit which controls the semiconductor switching element;
a temperature detector which detects a temperature of the semiconductor switching element;
a current detector which detects current flowing to the semiconductor switching element; and
a voltage detector which detects voltage applied to the semiconductor switching element,
wherein the control unit includes
a semiconductor switching element loss calculation unit which calculates a loss in the semiconductor switching element with use of a switching state of the semiconductor switching element, and both or either of a current detection value and a voltage detection value; and
a cooler state estimation unit which estimates a state of the cooler from a loss calculation value from the semiconductor switching element loss calculation unit and a temperature detection value from the temperature detector,
wherein the control unit limits current flowing to the semiconductor switching element on the basis of the state of the cooler,
wherein the control unit includes a junction temperature calculation unit which estimates a junction temperature of the semiconductor switching element on the basis of the loss calculation value of the semiconductor switching element, the state of the cooler, and the temperature detection value, and
wherein the control unit limits current flowing to the semiconductor switching element on the basis of the junction temperature.
19. The power conversion device according to claim 18 , wherein the junction temperature calculation unit includes
a junction temperature characteristic selection unit which selects, according to the state of the cooler, a correlation between the loss calculation value of the semiconductor switching element and a difference between the temperature detection value and the junction temperature of the semiconductor switching element, and
a junction temperature increase calculation unit which calculates a temperature increase value which is the difference between the temperature detection value and the junction temperature of the semiconductor switching element with use of the correlation selected by the junction temperature characteristic selection unit, the loss calculation value of the semiconductor switching element, and the temperature detection value, and
wherein the junction temperature calculation unit adds the temperature detection value and the temperature increase value, to estimate the junction temperature of the semiconductor switching element.
20. The power conversion device according to claim 19 , wherein the correlation selected by the junction temperature characteristic selection unit is approximated by a zero- or higher-order lag system.