IP Library › Granted Patent US 11,201,594
Granted Patent B2
US 11,201,594 · App. 16/784,494 · Granted Dec 14, 2021

Cascode amplifier circuit

Inventor: Nobuyasu Beppu (Kyoto, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H03F1/223H03F1/0211H03F1/342H03F3/195H03F2200/129H03F2200/21H03F2200/294H03F2200/451
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Quick Facts
Patent No.
US 11,201,594
App. No.
16/784,494
Granted
Dec 14, 2021
Kind
B2
Abstract

An amplifier circuit is a cascade amplifier circuit that includes a first transistor circuit including a signal input portion to which a signal is input from outside; a load circuit connected between the first transistor circuit and a power-supply line; and a second transistor cascode-connected between the load circuit and the first transistor circuit. The first transistor circuit is constituted by a plurality of transistors connected in parallel, and a bias circuit is provided that selectively supplies a bias voltage to the plurality of transistors.

Claims (27)

1. A cascode amplifier circuit comprising:

a first transistor circuit to which a signal is input and that comprises a plurality of transistors connected in parallel;

a load circuit connected between the first transistor circuit and a power-supply line;

at least one second transistor cascode-connected between the load circuit and the first transistor circuit;

a bias circuit configured to selectively supply a bias voltage to the plurality of transistors of the first transistor circuit;

a plurality of first capacitors, each of the plurality of first capacitors connected to a respective one of the plurality of transistors of the first transistor circuit; and

a second capacitor connected in series with the plurality of first capacitors.

2. The cascode amplifier circuit according to claim 1 , wherein, when the bias circuit is in a first state, the bias circuit is configured to supply the bias voltage such that all the plurality of transistors of the first transistor circuit are turned on.

3. The cascode amplifier circuit according to claim 1 , wherein, when the bias circuit is in a second state, the bias circuit is configured to supply the bias voltage such that at least one of the plurality of transistors of the first transistor circuit is turned off.

4. The cascode amplifier circuit according to claim 2 , wherein, when the bias circuit is in a second state, the bias circuit is configured to supply the bias voltage such that at least one of the plurality of transistors of the first transistor circuit is turned off.

5. The cascode amplifier circuit according to claim 1 , wherein the plurality of transistors of the first transistor circuit comprise transistors having different gate width sizes.

6. The cascode amplifier circuit according to claim 2 , wherein the plurality of transistors of the first transistor circuit comprise transistors having different gate width sizes.

7. The cascode amplifier circuit according to claim 3 , wherein the plurality of transistors of the first transistor circuit comprise transistors having different gate width sizes.

8. The cascode amplifier circuit according to claim 5 , wherein, for two of the transistors having different gate width sizes, a ratio of the gate width sizes for the two transistors is a ratio of powers of two.

9. The cascode amplifier circuit according to claim 6 , wherein, for two of the transistors having different gate width sizes, a ratio of the gate width sizes for the two transistors is a ratio of powers of two.

10. The cascode amplifier circuit according to claim 7 , wherein, for two of the transistors having different gate width sizes, a ratio of the gate width sizes for the two transistors is a ratio of powers of two.

11. The cascode amplifier circuit according to claim 1 , wherein the bias circuit, the first transistor circuit, and the at least one second transistor are constituted in or on a single die.

12. The cascode amplifier circuit according to claim 2 , wherein the bias circuit, the first transistor circuit, and the at least one second transistor are constituted in or on a single die.

13. The cascode amplifier circuit according to claim 3 , wherein the bias circuit, the first transistor circuit, and the at least one second transistor are constituted in or on a single die.

14. The cascode amplifier circuit according to claim 5 , wherein the bias circuit, the first transistor circuit, and the at least one second transistor are constituted in or on a single die.

15. The cascode amplifier circuit according to claim 8 , wherein the bias circuit, the first transistor circuit, and the at least one second transistor are constituted in or on a single die.

16. The cascode amplifier circuit according to claim 1 , comprising a plurality of second transistors cascode-connected between the load circuit and the first transistor circuit.

17. The cascode amplifier circuit according to claim 1 , further comprising a feedback circuit connected to a node between the at least one second transistor and the first transistor circuit, and to a node between an input of the cascode amplifier and an input of the first transistor circuit.

18. The cascode amplifier circuit according to claim 17 , wherein the feedback circuit is further connected to a node between the load circuit and the at least one second transistor.

19. The cascode amplifier circuit according to claim 1 , wherein the bias circuit is configured to:

increase a linearity of the first transistor circuit by supplying the bias voltage to a first transistor of the plurality of transistors, but not to a second transistor of the plurality of transistors; and

increase a gain of the first transistor circuit by supplying the bias voltage to both the first transistor and the second transistor of the plurality of transistors.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 7, 2020
From: BEPPU, NOBUYASU
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 051753/0041 →
Priority Claims (1)
JP JP2017-156173 · Aug 10, 2017 · national
Continuity (2)
Continuation PCTJP2018029797 · Aug 8, 2018
Related Publication 20200177135A1 · Jun 4, 2020