Silicon-based lithium niobate film electro-optic modulator array and integration method thereof
Integration method of a large-scale silicon-based lithium niobate film electro-optic modulator array. By using the method, the difficulty of a fabrication process of a lithium niobate crystal layer is reduced, requirements on precision of bonding lithium niobate and silicon is reduced, and fabrication and bonding of the large-scale array lithium niobate crystal layer can be completed at one time, so that production efficiency of the silicon-based lithium niobate film electro-optic modulator array is greatly improved; through design and optimization of the structure of the silicon crystal layers, light can be naturally alternated and mutually transmitted in silicon waveguides and lithium niobate waveguides, and a high-performance electro-optic modulation effect of the lithium niobate film is achieved.
1. A method for integrating a silicon-based lithium niobate film electro-optic modulator array, comprising:
(1) oxidizing a smooth silicon crystal substrate ( 2 ) by thermal oxidation to form a silicon dioxide film layer ( 3 );
(2) depositing polycrystalline silicon with a certain thickness on the silicon dioxide film layer ( 3 ) by chemical vapor deposition (CVD), and forming silicon waveguide layers ( 4 ) with a plurality of silicon-based lithium niobate film electro-optic modulators ( 1 ) arranged in an array by dry etching or wet etching, wherein the silicon waveguide layers ( 4 ) comprise optical splitters ( 41 ) and optical couplers ( 42 ) of all the electro-optic modulators arranged in the array, an input terminal of each of the optical splitters ( 41 ) is an incident light port, and an output terminal of each of the optical couplers ( 42 ) is a modulated light output port; and optical output ports and optical input ports between the modulators are interconnected to form a cascading, parallel or hybrid structure;
(3) for each electro-optic modulator ( 1 ) in an array, performing ion implantation on two sides of the silicon waveguide ( 4 ) where a direct-current voltage is to be applied, wherein phosphorus ions are implanted on one side while boron ions are implanted on the other side to form a PN junction across the silicon waveguide;
(4) forming a metal layer on the silicon waveguide layers ( 4 ) by chemical vapor deposition, and removing excess metal by a dry etching process to form metal connection lines only above the PN junctions and form metal lines connected to the outside such that a direct-current bias electrode layer ( 7 ) and direct-current bias input ports are made;
(5) etching a wafer-level lithium niobate wafer by dry etching or wet etching to form periodic ridge structures to fabricate a lithium niobate film layer ( 6 ), and covering all the N silicon waveguide layers ( 4 ) arranged in the array with the lithium niobate film layer ( 6 );
(6) aligning the ridge structures on the lithium niobate film layer ( 6 ) with the optical couplers ( 42 ) arranged in the array in the silicon waveguide layers ( 4 ), and bonding the lithium niobate film layer ( 6 ) and the silicon waveguide layers ( 4 ) by using an adhesive ( 5 ); and
(7) forming a metal layer on the lithium niobate film layer ( 6 ) by chemical vapor deposition, and then removing excess metal by dry etching or wet etching while only leaving, for each electro-optic modulator, radio-frequency metal electrodes in regions where a radio-frequency signal is to be applied and radio-frequency electrode metal connection lines connected to the outside to form a radio-frequency electrode layer ( 8 ) and radio-frequency signal input ports; thus obtaining the array integrating N electro-optic modulators having 2*N optical splitters ( 41 ) arranged in the array, 2*N optical couplers ( 42 ) arranged in the array, N direct-current voltage input ports and N radio-frequency input ports.
2. The method of claim 1 , wherein the optical splitters ( 41 ) are multimode interferometer structures or evanescent wave optical splitter structures.
3. The method of claim 1 , wherein the optical couplers ( 42 ) are waveguide grating couplers or evanescent wave couplers.
4. The method of claim 1 , wherein the modulators in the silicon-based lithium niobate film electro-optic modulator array are arranged in a grid form or in a honeycomb form.
5. The method of claim 4 , wherein the ridge structures are lateral periodic strip structures or Mach-Zehnder interference structures in a grid form.
6. The method of claim 1 , wherein the ridge structures are lateral periodic strip structures or Mach-Zehnder interference structures in a grid form.
7. A silicon-based lithium niobate film electro-optic modulator array prepared by the method of claim 1 , comprising, from bottom to top:
the silicon crystal substrate layer ( 2 ),
the silicon dioxide film layer ( 3 ) on top of the silicon crystal substrate layer ( 2 ),
the silicon waveguide layer ( 4 ) on top of the silicon dioxide film layer ( 3 ) and comprising a plurality of silicon-based lithium niobate film electro-optic modulators arranged in an array,
the direct-current bias electrode layer ( 7 ) located above the silicon dioxide film layer ( 3 ) and in a same level as the silicon waveguide layer ( 4 ), wherein the direct-current bias electrode layer ( 7 ) is arranged in regions where a direct-current bias is applied to the silicon waveguide layers ( 4 ),
the adhesive layer ( 5 ),
the lithium niobate film layer ( 6 ) on top of the adhesive layer, wherein the lithium niobate film layer ( 6 ) is bonded to the silicon waveguide layer ( 4 ) by the adhesive layer ( 5 ),
and
the radio-frequency electrode layer ( 8 ) in a same level as the lithium niobate film layer ( 6 ), wherein the radio-frequency electrode layer ( 8 ) is arranged in regions where a radio-frequency signal is applied to the lithium niobate film layer ( 6 ).
8. The silicon-based lithium niobate film electro-optic modulator array according to claim 7 , wherein the plurality of the silicon-based lithium niobate film electro-optic modulators ( 1 ) in the array are periodically arranged.
9. The silicon-based lithium niobate film electro-optic modulator array according to claim 7 , wherein each of the silicon-based lithium niobate film electro-optic modulators ( 1 ) in the array comprises
one optical input port,
one optical output port,
one direct-current input port, and
one radio-frequency input port.
10. The silicon-based lithium niobate film electro-optic modulator array according to claim 9 , wherein the plurality of the silicon-based lithium niobate film electro-optic modulators in the array in the silicon waveguide layer ( 4 ) form a cascading, parallel, or hybrid waveguide interconnection structure.
11. The silicon-based lithium niobate film electro-optic modulator array according to claim 10 , wherein the waveguide interconnection structure are formed by interconnecting the optical output ports and the optical input ports between the silicon-based lithium niobate film electro-optic modulators in the array; and
each of the silicon-based lithium niobate film electro-optic modulators comprises the optical splitters ( 41 ) and the optical couplers ( 42 ).
12. The silicon-based lithium niobate film electro-optic modulator array according to claim 11 , wherein the optical splitters ( 41 ) are multimode interferometer structures or evanescent wave optical splitter structures.
13. The silicon-based lithium niobate film electro-optic modulator array according to claim 11 , wherein each optical splitter ( 41 ) comprises one or two optical output ports.
14. The silicon-based lithium niobate film electro-optic modulator array according to claim 11 , wherein the optical couplers ( 42 ) are waveguide grating couplers or evanescent wave couplers.
15. The silicon-based lithium niobate film electro-optic modulator array according to claim 7 , wherein the modulators in the silicon-based lithium niobate film electro-optic modulator array are arranged in a grid form or in a honeycomb form.
16. The silicon-based lithium niobate film electro-optic modulator array according to claim 7 , wherein ridge structures are formed on the lithium niobate film layer ( 6 ) by etching, and the ridge structures are lateral periodic strip structures or Mach-Zehnder interference structures in a gird form.