Semiconductor device and method for manufacturing semiconductor device

1. A semiconductor device comprising:

a first insulator;

a second insulator over the first insulator;

a first oxide over the first insulator;

a second oxide over the first oxide;

a first conductor and a second conductor over the second oxide;

a third insulator over the first conductor;

a fourth insulator over the second conductor;

a third oxide over the second oxide;

a fifth insulator over the third oxide;

a third conductor that is positioned over the fifth insulator and overlaps with the third oxide;

a sixth insulator covering the first to fifth insulators, the first oxide, the second oxide, the third oxide, and the first to third conductors; and

a seventh insulator over the sixth insulator;

wherein the sixth insulator is in contact with part of a top surface of the first insulator, a side surface of the second insulator, a side surface of the fifth insulator, side surfaces of the first to third oxides, side surfaces of the first to third conductors, and a top surface of the third conductor.

2. The semiconductor device according to claim 1 , wherein each of the first insulator, the sixth insulator, and the seventh insulator suppresses transmission of one or both of oxygen and hydrogen more than the second insulator.

3. The semiconductor device according to claim 1 , wherein each of the first insulator, the sixth insulator, and the seventh insulator transmits one or both of oxygen and hydrogen to a lesser extent than the fifth insulator.

4. The semiconductor device according to claim 1 , wherein each of the first insulator and the sixth insulator is an oxide including one or both of aluminum and hafnium.

5. The semiconductor device according to claim 1 , wherein each of the first insulator and the sixth insulator is aluminum oxide.

6. The semiconductor device according to claim 1 , wherein the seventh insulator includes silicon and nitrogen.

7. The semiconductor device according claim 1 , wherein the first to third oxides contain In, an element M (M is Al, Ga, Y, or Sn), and Zn.

8. The semiconductor device according to claim 7 ,

wherein the second oxide includes a lattice point group obtained by analyzing a transmission electron microscope image of a top surface of the second oxide, and

wherein the proportion of hexagon Voronoi regions in a Voronoi diagram composed of the lattice point group is higher than or equal to 50% and lower than or equal to 80%.

9. A method for manufacturing a semiconductor device, comprising the steps of:

depositing a first insulating film;

depositing a second insulating film over the first insulating film;

depositing a third insulating film over the second insulating film;

depositing a first oxide over the third insulating film;

depositing a second oxide over the first oxide;

depositing a first conductive film over the second oxide;

depositing a fourth insulating film over the first conductive film;

depositing a second conductive film over the fourth insulating film;

processing part of the second conductive film by a lithography method to form an opening in which the fourth insulating film is exposed in the second conductive film;

processing the second conductive film, the fourth insulating film, and the first conductive film by a lithography method to form a first layer including the second conductive film including the opening, the fourth insulating film, and the first conductive film;

processing the second oxide and the first oxide using the first layer as an etching mask;

removing the fourth insulating film exposed in the opening to expose the first conductive film in the opening;

removing the second conductive film and the first conductive film exposed in the opening to expose the second oxide in the opening, divide the first conductive film into a first conductor and a second conductor, and divide the fourth insulating film into a first insulator and a second insulator;

processing the second insulating film to form a second layer including the second insulating film, the first oxide, the second oxide, the first conductor, the second conductor, the first insulator, and second insulator;

depositing a third oxide over the first insulating film and the second layer;

depositing a fifth insulating film over the third oxide;

depositing a third conductive film over the fifth insulating film;

processing the third conductive film, the fifth insulating film, and the third oxide by a lithography method to form a third layer including the third conductive film, the fifth insulating film, and the third oxide; and

depositing a sixth insulating film over the first insulating film, the second layer, and the third layer.

10. The method for manufacturing a semiconductor device according to claim 9 , wherein the deposition of the third oxide, the deposition of the fifth insulating film, and the deposition of the third conductive film are successively deposited under a reduced pressure using a deposition apparatus including a plurality of treatment chambers.

11. The method for manufacturing a semiconductor device according to claim 9 , wherein the deposition of the first insulating film, the deposition of the second insulating film, the deposition of the third insulating film, the deposition of the first oxide, the deposition of the second oxide, the deposition of the first conductive film, the deposition of the fourth insulating film, and the deposition of the second conductive film are successively deposited under a reduced pressure using a deposition apparatus including a plurality of treatment chambers.

12. The method for manufacturing a semiconductor device according to claim 11 , wherein in the treatment chamber, deposition is performed by a sputtering method.