Dummy structure at fin cut

1. A semiconductor device comprising:

a substrate;

a first elongated fin structure disposed on the substrate;

a second elongated fin structure disposed on the substrate, a longitudinal axis of the first elongated fin structure being aligned with a longitudinal axis of the second elongated fin structure; and

a dummy structure extending between the first elongated fin structure and the second elongated fin structure, the dummy structure comprising a dielectric material.

2. The semiconductor device of claim 1 , wherein the dummy structure comprising a dummy fin structure in direct contact with the first elongated fin structure and in direct contact with the second elongated fin structure, the first elongated fin structure and the second elongated fin structures being functional fin structures.

3. The semiconductor device of claim 2 , wherein the dummy fin structure has a smaller height than the first elongated fin structure.

4. The semiconductor device of claim 3 , wherein a difference in height between the dummy fin structure and the elongated fin structure is within a range of 1-30 nanometers.

5. The semiconductor device of claim 1 , wherein the first elongated fin structure and second elongated fin structure comprise silicon germanium.

6. The semiconductor device of claim 1 , wherein a length of the dummy structure from an end of the first elongated fin structure to an end of the second elongated fin structure is within a range of about 12-20 nanometers.

7. The semiconductor device of claim 1 , wherein the dummy structure comprises at least one of: SiCN, SiN, SiOCN, HfO 2 , ZrO 2 , HfAlO x , and HfSiO x .

8. The semiconductor device of claim 1 , wherein the elongated fin structure is part of a transistor for an n-type device.

9. The semiconductor device of claim 1 , wherein the elongated fin structure is part of a transistor for a Static Random Access Memory (SRAM) device.

10. The semiconductor device of claim 9 , wherein the transistor is a pull-up transistor.

11. A semiconductor device comprising:

a substrate;

a plurality of elongated fin structures disposed on the substrate, the plurality of elongated fin structures comprising a first elongated fin structure, wherein a longitudinal axis of the first elongated fin structure is aligned with a longitudinal axis of a second elongated fin structure;

a plurality of dummy fins positioned between the plurality of elongated fin structures; and

a dummy structure positioned between the first elongated fin structure and the second elongated fin structure.

12. The semiconductor device of claim 11 , wherein the dummy structure comprises a dummy fin structure extending between the first elongated fin structure and the second elongated fin structure, the dummy structure having a different height than the plurality of elongated fin structures.

13. The semiconductor device of claim 12 , wherein the dummy structure comprises at least one of: SiCN, SiN, SiOCN, HfO 2 , ZrO 2 , HfAlO x , and HfSiO x .

14. The semiconductor device of claim 11 , wherein the elongated fin structure is part of a transistor for an n-type device.

15. The semiconductor device of claim 11 , wherein the elongated fin structure is part of a transistor for a Static Random Access Memory (SRAM) device.

16. The semiconductor device of claim 15 , wherein the transistor is a pull-up transistor.

17. A semiconductor device comprising:

an elongated fin structure, wherein the elongated fin structure includes a first portion and a second portion, wherein a longitudinal axis of the first portion is aligned with the longitudinal axis of the second portion; and

a dummy structure positioned and separating the first portion and the second portion.

18. The device of claim 17 , wherein the dummy structure comprises a dummy fin structure extending between the first portion and the second portion.

19. The device of claim 18 , wherein the dummy fin structure has a smaller height than the elongated fin structure.