Temperature sensor
A temperature sensor that includes an organic-inorganic composite negative temperature coefficient thermistor and a transistor. The organic-inorganic composite negative temperature coefficient thermistor includes a thermistor layer which includes spinel-type semiconductor ceramic composition powder containing Mn, Ni and Fe and an organic polymer component, and a pair of electrode layers. The semiconductor ceramic composition powder has a molar ratio of Mn to Ni of 85/15≥Mn/Ni≥65/35 and a Fe content of 30 parts by mole or less when a total molar amount of Mn and Ni is regarded as 100 parts by mole, and has a peak with a local maximum value of around 29° to 31° in its X-ray diffraction pattern, a half width of which peak is 0.15 or more. The transistor is electrically connected with either one of the pair of electrode layers.
1. A temperature sensor comprising:
an organic-inorganic composite negative temperature coefficient thermistor that comprises:
a thermistor layer which comprises spinel-type semiconductor ceramic composition powder containing Mn, Ni and Fe and an organic polymer component, wherein the semiconductor ceramic composition powder has a molar ratio of Mn to Ni of 85/15≥Mn/Ni≥65/35 and a Fe content of 30 parts by mole or less when a total molar amount of Mn and Ni is regarded as 100 parts by mole, the semiconductor ceramic composition powder having a peak with a local maximum value of 29° to 31° in its x-ray diffraction pattern, a half width of which peak is 0.15 or more, and
a pair of electrode layers; and
a transistor electrically connected with either one of the pair of electrode layers of the organic-inorganic composite negative temperature coefficient thermistor.
2. The temperature sensor according to claim 1 , wherein the transistor is an organic transistor.
3. The temperature sensor according to claim 2 , wherein the organic transistor comprises a gate electrode layer, a gate insulating film, an organic semiconductor layer, a source electrode layer and a drain electrode layer.
4. The temperature sensor according to claim 1 , wherein the semiconductor ceramic composition powder has an average particle diameter of 2 μm or less.
5. The temperature sensor according to claim 4 , wherein the average particle diameter is 0.4 μm to 1.5 μm.
6. The temperature sensor according to claim 4 , wherein a volume percentage of the semiconductor ceramic composition powder in the thermistor layer is 30% by volume to 70% by volume.
7. The temperature sensor according to claim 1 , wherein the semiconductor ceramic composition powder further comprises one or more selected from Co, Ti and Al, and
wherein a sum of the Co, Ti and Al is 2.0 parts by mole to 60 parts by mole when the total molar amount of Mn and Ni is regarded as 100 parts by mole.
8. The temperature sensor according to claim 1 , wherein the semiconductor ceramic composition powder has a specific surface area of 2 m 2 /g to 12 m 2 /g.
9. The temperature sensor according to claim 1 , wherein a volume percentage of the semiconductor ceramic composition powder in the thermistor layer is 30% by volume to 70% by volume.
10. The temperature sensor according to claim 1 , wherein the organic polymer component comprises a thermoset resin.
11. The temperature sensor according to claim 10 , wherein the thermoset resin is one or more resins selected from an epoxy resin, an epoxy acrylate resin, a phenol novolac-type epoxy resin, a phenol resin, an urethane resin, a silicone resin, a polyamide resin and a polyimide resin.
12. The temperature sensor according to claim 10 , wherein the organic polymer component further comprises a phenoxy resin.
13. The temperature sensor according to claim 1 , wherein the organic polymer component comprises a thermoplastic resin.
14. The temperature sensor according to claim 13 , wherein the thermoplastic resin is one or more resins selected from a polyvinyl butyral resin, an epoxy resin containing no curing agent, a phenoxy resin containing no curing agent, a polyester and a polyvinyl acetate.
15. The temperature sensor according to claim 1 , wherein the thermistor layer has a thickness of 200 μm or less.
16. The temperature sensor according to claim 15 , wherein the thickness of the thermistor layer is 5 μm to 50 μm.
17. A temperature sensing device comprising:
a substrate;
a plurality of x-electrodes and a plurality of y-electrodes arranged crosswise in a matrix form on the substrate; and
a plurality of the temperature sensors according to claim 1 ,
wherein the plurality of temperature sensors are respectively arranged in a vicinity of each one of intersections of the x-electrodes and the y-electrodes, and
wherein each of the respective transistors of the plurality of temperature sensors are electrically connected with one of the x-electrodes and one of the y-electrodes.
18. The temperature sensing device according to claim 17 , further comprising a reading unit for reading a change in a resistance value of the organic-inorganic composite negative temperature coefficient thermistor of each of the plurality of temperature sensors, and a radio communication unit for transmitting information read by the reading unit.
19. The temperature sensing device according to claim 17 , wherein the semiconductor ceramic composition powder has an average particle diameter of 2 μm or less.
20. The temperature sensing device according to claim 17 , wherein a volume percentage of the semiconductor ceramic composition powder in the thermistor layer is 30% by volume to 70% by volume.