Substrate support and substrate processing apparatus
Described herein is a technique capable of preventing a susceptor made of quartz from being damaged by contacting a reflector deformed by thermal expansion. A substrate support according to the technique may include an upper susceptor made of quartz; a lower susceptor made of quartz; and a reflector reflecting heat and made of a metal in a planar shape. A lower surface of the upper susceptor is bonded with an upper surface of the lower susceptor such that the reflector is interposed therebetween, a first recess accommodating the reflector is provided at the upper surface of the lower susceptor, and a portion of the lower surface of the upper susceptor facing the first recess is roughened.
1. A substrate support comprising:
an upper susceptor made of quartz;
a lower susceptor made of quartz; and
a reflector reflecting heat and made of a metal in a planar shape,
wherein a lower surface of the upper susceptor is bonded with an upper surface of the lower susceptor such that the reflector is interposed therebetween, a first recess accommodating the reflector is provided at the upper surface of the lower susceptor, and the lower surface of the upper susceptor comprises a roughened ceiling surface facing the first recess.
2. The substrate support of claim 1 , wherein a heating element radiating heat is provided in the upper susceptor, and the reflector is configured to reflect the heat radiated from the heating element.
3. The substrate support of claim 2 , wherein the upper susceptor comprises:
an upper plate whereon a substrate is placed;
a lower plate bonded to the lower susceptor; and
the heating element provided between the upper plate and the lower plate.
4. The substrate support of claim 1 , wherein the upper susceptor and the lower susceptor are bonded to each other by bonding a polished portion of the lower surface of the upper susceptor with a polished portion of the upper surface of the lower susceptor by a thermocompression bonding process, and a surface roughness of the roughened ceiling surface of the upper susceptor facing the first recess is greater than a surface roughness of the polished portion of the lower surface of the upper susceptor.
5. The substrate support of claim 1 , wherein a surface roughness of the roughened ceiling surface of the upper susceptor facing the first recess is equal to or greater than 0.1 μm.
6. The substrate support of claim 1 , wherein a second recess is provided at a portion of the lower surface of the upper susceptor facing the first recess, and the roughened ceiling surface is provided on the second recess.
7. The substrate support of claim 6 , wherein the second recess and the roughened ceiling surface of the second recess facing the first recess are formed by grinding.
8. The substrate support of claim 1 , wherein a bottom surface of the first recess is roughened.
9. The substrate support of claim 8 , wherein the upper susceptor and the lower susceptor are bonded to each other by bonding a polished portion of the lower surface of the upper susceptor with a polished portion of the upper surface of the lower susceptor by a thermocompression bonding process, and a surface roughness of the bottom surface of the first recess is greater than a surface roughness of the polished portion of the upper surface of the lower susceptor.
10. The substrate support of claim 8 , wherein the first recess and the bottom surface of the first recess are formed by grinding.
11. The substrate support of claim 8 , wherein a surface roughness of the roughened ceiling surface of the upper susceptor facing the first recess is substantially equal to a surface roughness of the bottom surface of the first recess.
12. The substrate support of claim 1 , wherein the roughened ceiling surface of the upper susceptor facing the first recess and a bonded portion of the lower surface of the upper susceptor whereat the upper susceptor is bonded to the lower susceptor are aligned on a same plane.
13. The substrate support of claim 12 , wherein the upper susceptor and the lower susceptor are bonded to each other by bonding a polished portion of the lower surface of the upper susceptor with a polished portion of the upper surface of the lower susceptor by a thermocompression bonding process, and a surface roughness of the roughened ceiling surface of the upper susceptor facing the first recess is greater than a surface roughness of the polished portion of the lower surface of the upper susceptor.
14. The substrate support of claim 12 , wherein a surface roughness of the roughened ceiling surface of the upper susceptor facing the first recess is equal to or greater than 0.1 μm.
15. The substrate support of claim 1 , wherein the reflector is made of molybdenum or tungsten.
16. A substrate processing apparatus comprising a substrate support, the substrate support comprising:
an upper susceptor made of quartz;
a heating element radiating heat and provided in the upper susceptor;
a lower susceptor made of quartz; and
a reflector reflecting the heat from the heating element and made of a metal in a planar shape,
wherein a lower surface of the upper susceptor is bonded with an upper surface of the lower susceptor such that the reflector is interposed therebetween, a first recess accommodating the reflector is provided at the upper surface of the lower susceptor, and the lower surface of the upper susceptor comprises a roughened ceiling surface facing the first recess.