3D memory array having select lines
A device comprises a column of cells disposed in multiple levels of word lines including a pillar comprising a first vertical conductive line, a second vertical conductive line, and a vertical semiconductor body disposed between and in contact with the first and second vertical conductive lines. A pillar select line is adjacent to and separated by a gate dielectric from the vertical semiconductor body to form a pillar select switch, the pillar select line disposed beneath the first and second vertical conductive lines. A bottom select line is disposed beneath the first and second vertical conductive lines and insulated from the pillar select line and the first and second vertical conductive lines. The bottom select line is in current-flow contact with the vertical semiconductor body of the pillar.
1. A device, comprising:
a column of cells disposed in multiple levels of word lines including a pillar comprising a first vertical conductive line, a second vertical conductive line, and a vertical semiconductor body disposed between and in contact with the first and second vertical conductive lines;
a pillar select line adjacent to a gate dielectric and separated from the vertical semiconductor body by the gate dielectric to form a pillar select switch, the pillar select line disposed beneath the first and second vertical conductive lines; and
a bottom select line disposed beneath the first and second vertical conductive lines and insulated from the pillar select line and the first and second vertical conductive lines, the bottom select line in current-flow contact with the vertical semiconductor body of the pillar.
2. The device of claim 1 , comprising:
a stack of conductive strips disposed adjacent the vertical semiconductor body above the pillar select line; and
charge storage structures on sidewalls of conductive strips in the stack of conductive strips,
wherein cells in the column of cells are disposed at cross-points of the conductive strips with the pillar, having source and drain terminals in the first and second vertical conductive lines, and channels in the vertical semiconductor body.
3. The device of claim 1 , wherein the bottom select line extends in a first direction, and the pillar select line extends in a second direction orthogonal to the first direction.
4. The device of claim 1 , comprising:
a first horizontal conductive line overlying the column of cells and coupled to the first vertical conductive line of the pillar; and
a second horizontal conductive line overlying the column of cells and coupled to the second vertical conductive line of the pillar,
wherein the first horizontal conductive line extends in a first direction, and the second horizontal conductive line extends in a second direction orthogonal to the first direction.
5. The device of claim 4 , wherein the first and second horizontal conductive lines are input lines and output lines, respectively.
6. The device of claim 4 , wherein the first and second horizontal conductive lines are output lines and input lines, respectively.
7. The device of claim 1 , comprising:
a bias circuit operatively coupled to the bottom select line to apply bias voltages to the vertical semiconductor body for at least one of program and erase operations for the column of cells.