IP Library Granted Patent US 11,211,547
Granted Patent B2
US 11,211,547 · App. 16/493,419 · Granted Dec 28, 2021

Spin-orbit-torque type magnetization rotating element, spin-orbit-torque type magnetoresistance effect element, and magnetic memory

Inventors: Takuya Ashida (Tokyo, JP); Yohei Shiokawa (Tokyo, JP); Tomoyuki Sasaki (Tokyo, JP)
Assignee: TDK CORPORATION
H01L43/02G11C11/161H01F10/329H01F41/32H01L27/222H01L43/10H01L43/12H01F10/3254H01F10/3286
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,211,547
App. No.
16/493,419
Granted
Dec 28, 2021
Kind
B2
Abstract

A spin-orbit-torque type magnetization rotating element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature, and an oxygen concentration in a region on the first ferromagnetic layer side and an oxygen concentration in a region opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof.

Claims (22)

1. A spin-orbit-torque type magnetization rotating element, comprising:

a spin-orbit torque wiring extending in a first direction; and

a first ferromagnetic layer laminated on the spin-orbit torque wiring,

wherein the spin-orbit torque wiring consists of a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature,

an oxygen concentration in a region of the spin-orbit torque wiring on a first ferromagnetic layer side and an oxygen concentration in a region of the spin-orbit torque wiring opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof, and

the spin-orbit torque wiring includes a portion where an oxygen concentration monotonously increases or monotonically decreases in the thickness direction of the spin-orbit torque wiring.

2. The spin-orbit-torque type magnetization rotating element according to claim 1 , wherein the metal oxide includes at least one element selected from the group consisting of Cr, Fe, Ir, W, Mo, Re, Ti, V, Nb, Pd, Ru, and Sn.

3. The spin-orbit-torque type magnetization rotating element according to claim 2 , wherein the metal oxide includes at least one element selected from the group consisting of Ir, W, Pd, Mo, Nb, and Re.

4. The spin-orbit-torque type magnetization rotating element according to claim 1 , wherein, in a view of the thickness direction, an oxygen concentration at a first point overlapping the first ferromagnetic layer of the spin-orbit torque wiring is lower than an oxygen concentration at a second point not overlapping the first ferromagnetic layer.

5. A spin-orbit-torque type magnetoresistance effect element, comprising:

the spin-orbit-torque type magnetization rotating element according to claim 1 ;

a second ferromagnetic layer facing the first ferromagnetic layer; and

a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer.

6. A magnetic memory, comprising:

a plurality of the spin-orbit-torque type magnetoresistance effect elements according to claim 5 .

7. A spin-orbit-torque type magnetization rotating element, comprising:

a spin-orbit torque wiring extending in a first direction; and

a first ferromagnetic layer laminated on the spin-orbit torque wiring,

wherein the spin-orbit torque wiring consists of a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature,

an oxygen concentration in a region of the spin-orbit torque wiring on a first ferromagnetic layer side and an oxygen concentration in a region of the spin-orbit torque wiring opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof, and

in a view of the thickness direction, an oxygen concentration at a first point overlapping the first ferromagnetic layer of the spin-orbit torque wiring is lower than an oxygen concentration at a second point not overlapping the first ferromagnetic layer.

8. The spin-orbit-torque type magnetization rotating element according to claim 7 , wherein the spin-orbit torque wiring includes a portion where an oxygen concentration monotonously increase or monotonically decrease in the thickness direction of the spin-orbit torque wiring.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 12, 2019
From: ASHIDA, TAKUYA; SHIOKAWA, YOHEI; SASAKI, TOMOYUKI
To: TDK CORPORATION
Reel/Frame 050355/0576 →
Priority Claims (1)
JP JP2018-035220 · Feb 28, 2018 · national
Continuity (1)
Related Publication 20200136017A1 · Apr 30, 2020