Method for forming semiconductor device with resistive element

1. A method for forming a semiconductor device structure, comprising:

forming a dielectric layer over a semiconductor substrate;

forming a conductive line in the dielectric layer;

forming an etch stop layer over the dielectric layer and the conductive line;

patterning the etch stop layer to form a contact opening exposing a portion of the conductive line;

forming a resistive layer over the etch stop layer, wherein the resistive layer extends into the contact opening;

patterning the resistive layer to form a resistive element;

forming a second dielectric layer over the resistive element and the etch stop layer; and

forming a conductive via in the second dielectric layer, wherein the conductive via penetrates through the etch stop layer, the conductive via is separated from the resistive element by the second dielectric layer, and the contact opening is wider than the conductive via.

2. The method for forming a semiconductor device structure as claimed in claim 1 , wherein bottoms of the contact opening and the conductive via are substantially level with each other.

3. The method for forming a semiconductor device structure as claimed in claim 1 , further comprising:

forming a trench and a via hole in the second dielectric layer after the formation of the resistive element, wherein the via hole penetrates through the etch stop layer; and

forming a conductive line and the conductive via in the trench and the via hole, respectively.

4. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the second dielectric layer is formed after the resistive element is formed.

5. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the conductive via is formed to extend across an interface between the resistive element and the second dielectric layer.

6. The method for forming a semiconductor device structure as claimed in claim 1 , further comprising:

forming a top conductive line over the resistive element, wherein the resistive element is positioned between the top conductive line and the conductive line, and there is not any conductive line formed between the top conductive line and the conductive line; and

forming a passivation layer directly on the top conductive line.

7. The method for forming a semiconductor device structure as claimed in claim 1 , further comprising forming a barrier layer in the dielectric layer before the conductive line is formed, wherein the barrier layer is between the conductive line and the dielectric layer, the barrier layer contains nitrogen, the barrier layer has a first atomic concentration of nitrogen, the resistive element has a second atomic concentration of nitrogen, and the second atomic concentration of nitrogen is greater than the first atomic concentration of nitrogen.

8. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the resistive layer completely fills the contact opening.

9. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the resistive layer is conformally formed along sidewalls and a bottom of the contact opening.

10. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the contact opening extends into the conductive line.

11. The method for forming a semiconductor device structure as claimed in claim 1 , further comprising forming a conductive line in the second dielectric layer, wherein the conductive line is over the conductive via, and the conductive line is wider than the conductive via.

12. A method for forming a semiconductor device structure, comprising:

forming a dielectric layer over a semiconductor substrate;

forming a first conductive feature and a second conductive feature in the dielectric layer;

forming an etch stop layer over the dielectric layer;

forming a first opening and a second opening in the etch stop layer to partially expose the first conductive feature and the second conductive feature, respectively;

forming a resistive element over the etch stop layer, wherein the resistive element extends into the first opening and the second opening; and

forming a barrier layer in the dielectric layer before the first conductive feature is formed, wherein the barrier layer is between the first conductive feature and the dielectric layer, the barrier layer contains nitrogen, the barrier layer has a first atomic concentration of nitrogen, the resistive element has a second atomic concentration of nitrogen, and the second atomic concentration of nitrogen is greater than the first atomic concentration of nitrogen.

13. The method for forming a semiconductor device structure as claimed in claim 12 , further comprising:

forming a second dielectric layer over the resistive element and the etch stop layer; and

forming a conductive via in the second dielectric layer, wherein the conductive via penetrates through the etch stop layer, wherein the conductive via extends across an interface between the resistive element and the second dielectric layer.

14. The method for forming a semiconductor device structure as claimed in claim 13 , wherein the first opening is wider than the conductive via.

15. A method for forming a semiconductor device structure, comprising:

forming a first dielectric layer over a semiconductor substrate;

forming a first conductive feature and a second conductive feature in the first dielectric layer;

forming an etch stop layer over the first dielectric layer;

forming an opening in the etch stop layer to partially expose the first conductive feature;

forming a resistive element over the etch stop layer, wherein the resistive element extends into the opening;

forming a second dielectric layer over the resistive element and the etch stop layer; and

forming a conductive via in the second dielectric layer, wherein the conductive via penetrates through the etch stop layer to be in electrical contact with the second conductive feature, wherein the conductive via is separated from the resistive element, and a contact area between the conductive via and the second conductive feature is smaller than a contact area between the resistive element and the first conductive feature.

16. The method for forming a semiconductor device structure as claimed in claim 15 , wherein the conductive via is formed to extend across an interface between the resistive element and the second dielectric layer.

17. The method for forming a semiconductor device structure as claimed in claim 15 , further comprising forming a barrier layer in the second dielectric layer before the conductive via is formed, wherein the barrier layer is between the conductive via and the second dielectric layer.

18. The method for forming a semiconductor device structure as claimed in claim 17 , wherein the barrier layer contains nitrogen, the barrier layer has a first atomic concentration of nitrogen, the resistive element has a second atomic concentration of nitrogen, and the second atomic concentration of nitrogen is greater than the first atomic concentration of nitrogen.

19. The method for forming a semiconductor device structure as claimed in claim 17 , wherein the resistive element has a first resistance, the barrier layer has a second resistance, and the first resistance is greater than the second resistance.

20. The method for forming a semiconductor device structure as claimed in claim 17 , wherein the resistive element has a first density, the barrier layer has a second density, and the first density is greater than the second density.