Deformable conductors and related sensors, antennas and multiplexed systems
A conducting shear thinning gel composition and methods of making such a composition are disclosed. The conducting shear thinning gel composition includes a mixture of a eutectic gallium alloy and gallium oxide, wherein the mixture of eutectic gallium alloy and gallium oxide has a weight percentage (wt %) of between about 59.9% and about 99.9% eutectic gallium alloy, and a wt % of between about 0.1% and about 2.0% gallium oxide. Also disclosed are articles of manufacture, comprising the shear thinning gel composition, and methods of making article of manufacture having a shear thinning gel composition. Also disclosed are sensors and multiplexed systems utilizing deformable conductors.
1. A conducting composition, comprising:
a eutectic gallium alloy; and
gallium oxide microstructures;
wherein the mixture of eutectic gallium alloy and gallium oxide microstructures has a weight percentage (wt %) of between about 59.9% and about 99.9% eutectic gallium alloy; and
wherein the composition is a gel stabilized by the gallium oxide microstructures, and exhibits a non-Newtonian behavior.
2. The conducting composition of claim 1 , further comprising one or more micro-particles or sub-micron scale loading particles dispersed within the mixture, where the loading particles have a wt % of between about 0.001% and about 40.0% of micro-particles in the composition.
3. The conducting composition of claim 1 , wherein the composition exhibits a shear-thinning behavior.
4. The conducting composition of claim 1 , wherein the gallium oxide has a wt % of between about 0.1% and about 2.0%.
5. The conducting composition of claim 1 , wherein the gallium oxide microstructures are interlinked.
6. A conducting composition comprising:
a gallium alloy; and
interlinked gallium oxide microstructures distributed within the gallium alloy;
wherein the composition is a gel stabilized by the gallium oxide microstructures and exhibits a non-Newtonian behavior.
7. The conducting composition of claim 6 , wherein the gallium alloy has a weight percentage (wt %) of between about 59.9% and about 99.9%.
8. The conducting composition of claim 6 , wherein the gallium oxide has a weight percentage (wt %) of between about 0.1% and about 2.0%.
9. The conducting composition of claim 6 , further comprising one or more micron-scale or sub-micron scale loading particles dispersed within the composition.
10. The conducting composition of claim 9 , wherein the loading particles have a wt % of between about 0.001% and about 40.0% of the composition.
11. The conducting composition of claim 6 , wherein the composition exhibits a shear-thinning behavior.
12. The conducting composition of claim 6 , wherein the gallium alloy comprises a eutectic gallium alloy.